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57 条记录 (耗时 0.047 秒)

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    2.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same
    5.
    发明授权
    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same 有权
    光致抗蚀剂交联单体，光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号：US06200731B1

    公开(公告)日：2001-03-13

    申请号：US09465112

    申请日：1999-12-16

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C173

    CPC分类号： C07D519/00 ,  C07C69/753 ,  Y10S430/115

    摘要： The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.

    摘要翻译： 本发明公开了由以下化学式1表示的光致抗蚀剂聚合物交联单体：<化学式1>其中V表示CH 2，CH 2 CH 2，氧或硫; Y选自直链或支链C 1-10烷基，氧和直链或支链C1-10醚; R'和R“分别表示H或CH 3; 我是1到5的数字; n为0〜3的数; 以及制备包含该光致抗蚀剂的光致抗蚀剂共聚物的方法。

    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same
    6.
    发明授权
    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same 有权
    具有羟基和羧基的光致抗蚀剂单体，其共聚物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06586619B2

    公开(公告)日：2003-07-01

    申请号：US10079753

    申请日：2002-02-19

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： C07C6974

    CPC分类号： C07D493/08 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10) alkyl, substituted or non-substituted (C1-C10) ether, substituted or non-substituted (C1-C10) ester, or substituted or non-substituted (C1-C10) ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

    摘要翻译： 本发明涉及可用于形成聚合物的新型单体，其可用于使用光谱的远紫外区域中的光源的光刻法，其共聚物和由其制备的光致抗蚀剂组合物。 本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚， 取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH2，CH2CH2，氧或硫; andi为0或1〜2的整数。

    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same
    7.
    发明授权
    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same 有权
    具有羟基和羧基的光致抗蚀剂单体，其共聚物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06410670B1

    公开(公告)日：2002-06-25

    申请号：US09383861

    申请日：1999-08-26

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： C08J13208

    CPC分类号： C07D493/08 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

    摘要翻译： 本发明涉及新颖的单体及其聚合物，它们可用于光光谱在光谱的远紫外区域中的光刻，其共聚物和由其制备的光致抗蚀剂组合物。 本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚， 取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH 2，CH 2 CH 2，氧或硫; i为0或1〜2的整数。

    Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same
    8.
    发明授权
    Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same 失效
    用于通过甲硅烷基化的顶表面成像方法的光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06770415B2

    公开(公告)日：2004-08-03

    申请号：US09884313

    申请日：2001-06-19

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7038

    CPC分类号： G03F7/265 ,  C08F8/00 ,  C08F8/14 ,  C08F222/06 ,  C08F232/00 ,  C08F232/04 ,  C08F232/08 ,  G03F7/0395 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  C08F2220/281 ,  C08F220/06 ,  C08F222/14 ,  C08F222/1006

    摘要： A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

    摘要翻译： 用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂聚合物和包含该光致抗蚀剂的光致抗蚀剂组合物。 本发明的光致抗蚀剂聚合物的保护基被选择性地保护在暴露区域中，因此产生羟基。 羟基与甲硅烷基化剂反应以引起甲硅烷基化过程。 因此，当干涉显影光致抗蚀剂膜时，曝光区域仅保留以形成负图形。 此外，本发明的光致抗蚀剂组合物对基材的粘附性优异，从而防止形成微小图案的图案塌陷。 结果，本光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的光刻工艺。

    Phenylenediamine derivative-type additive useful for a chemically amplified photoresist
    9.
    发明授权
    Phenylenediamine derivative-type additive useful for a chemically amplified photoresist 失效
    可用于化学放大光致抗蚀剂的苯二胺衍生物类型添加剂

    公开(公告)号：US06399272B1

    公开(公告)日：2002-06-04

    申请号：US09595434

    申请日：2000-06-15

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： B03F7004

    CPC分类号： G03F7/0392 ,  G03F7/0045

    摘要： The present invention relates to a phenylenediamine derivative of the formula: where B and B′ are defined herein. The phenylenediamine derivatives of the present invention are useful as an additive in a photoresist composition. For example, it has been found that photoresist. compositions comprising the phenylenediamine derivative of the present invention have a high energy latitude margin, an improved contrast value, and enhanced post exposure delay stability.

    摘要翻译： 本发明涉及下式的苯二胺衍生物：其中B和B'在本文中定义。 本发明的苯二胺衍生物可用作光致抗蚀剂组合物中的添加剂。 例如，已经发现光致抗蚀剂。 包含本发明的苯二胺衍生物的组合物具有高能量纬度裕度，改善的对比度值和增强的后曝光延迟稳定性。

    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    10.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 有权
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06235447B1

    公开(公告)日：2001-05-22

    申请号：US09418724

    申请日：1999-10-15

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C08F32/08 ,  C07C62/34 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below: wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R′ and R″ individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.

    摘要翻译： 本发明涉及可用于形成光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物的新单体，其适用于采用远紫外光源的光刻法，其共聚物。 本发明优选的单体由下面的化学式1表示：其中，X 1和X 2分别表示CH 2，CH 2 CH 2，氧或硫; Y表示CH2或氧; R 1表示H或CH 3，R'和R“分别表示取代或未取代的（C 0 -C 3）烷基; i表示0〜3的整数。