THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    21.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20070196964A1

    公开(公告)日:2007-08-23

    申请号:US11695937

    申请日:2007-04-03

    IPC分类号: H01L21/84 H01L21/00

    CPC分类号: H01L27/124

    摘要: A plurality of gate lines having gate electrodes are formed on a substrate and a semiconductor layer is formed on a gate insulating layer covering the gate lines. A plurality of data lines intersecting the gate lines are formed on the gate insulating layer and a plurality of drain electrodes are formed extending parallel with and adjacent to the data lines. Furthermore, a plurality of storage capacitor conductors are formed to be connected to the drain electrodes and to overlap an adjacent gate line. A passivation layer made of an organic material is formed on the above structure and has a contact hole. Furthermore, a plurality of pixel electrodes are formed to be electrically connected to the drain electrodes through the contact hole.

    摘要翻译: 在基板上形成具有栅电极的多条栅极线,在覆盖栅极线的栅极绝缘层上形成半导体层。 在栅极绝缘层上形成与栅极线相交的多个数据线,并且形成与数据线平行且相邻延伸的多个漏电极。 此外,多个保持电容导体形成为连接到漏极并与相邻的栅极线重叠。 在上述结构上形成由有机材料制成的钝化层,并具有接触孔。 此外,形成多个像素电极,以通过接触孔电连接到漏电极。

    Thin film transistor array panel and a manufacturing method thereof
    22.
    发明申请
    Thin film transistor array panel and a manufacturing method thereof 失效
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US20060038178A1

    公开(公告)日:2006-02-23

    申请号:US11207522

    申请日:2005-08-19

    申请人: Joo-Ae Youn

    发明人: Joo-Ae Youn

    IPC分类号: H01L29/04

    摘要: A method of manufacturing a thin film transistor array panel and a thin film transistor array panel are provided. The method includes: forming a gate line and a storage electrode line on a substrate; forming a gate insulating layer on the gate line and the storage electrode line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion on the passivation layer; etching the passivation layer using the photoresist to expose a portion of the data line and a first portion of the gate insulating layer; removing the second portion of the photoresist; etching the passivation layer and the first portion of the gate insulating layer using the photoresist to expose a second portion of the gate insulating layer and a portion of the drain electrode and a portion of the gate line; depositing a conductive film on the first transformed photoresist; and removing the first transformed photoresist to form a pixel electrode connected to the exposed portion of the drain electrode.

    摘要翻译: 提供了制造薄膜晶体管阵列面板和薄膜晶体管阵列面板的方法。 该方法包括:在基板上形成栅极线和存储电极线; 在栅极线和存储电极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 在所述钝化层上形成包括第一部分和第二部分的光致抗蚀剂; 使用所述光致抗蚀剂蚀刻所述钝化层以暴露所述数据线的一部分和所述栅极绝缘层的第一部分; 去除光致抗蚀剂的第二部分; 使用所述光致抗蚀剂蚀刻所述钝化层和所述栅极绝缘层的所述第一部分,以暴露所述栅极绝缘层的第二部分以及所述漏极电极的一部分和所述栅极线的一部分; 在第一转换的光致抗蚀剂上沉积导电膜; 以及去除所述第一变换的光致抗蚀剂以形成连接到所述漏电极的所述暴露部分的像素电极。

    Display panel, mask and method of manufacturing the same
    23.
    发明授权
    Display panel, mask and method of manufacturing the same 有权
    显示面板,面罩及其制造方法

    公开(公告)号:US08059076B2

    公开(公告)日:2011-11-15

    申请号:US11782236

    申请日:2007-07-24

    IPC分类号: G09G3/36

    摘要: A display panel includes a substrate, signal lines, a thin film transistor, a pixel electrode and a dummy opening. The substrate has a display area and a peripheral area surrounding the display area. The signal lines are disposed on the substrate and intersect each other to define a unit pixel. The thin film transistor is electrically connected to the signal lines and disposed at the unit pixel. The pixel electrode is electrically connected to the thin film transistor. The pixel electrode is formed in the unit pixel. The dummy opening is disposed at the peripheral area and spaced apart from the signal lines.

    摘要翻译: 显示面板包括基板,信号线,薄膜晶体管,像素电极和虚拟开口。 基板具有显示区域和围绕显示区域的周边区域。 信号线设置在基板上并彼此相交以限定单位像素。 薄膜晶体管电连接到信号线并且设置在单位像素处。 像素电极电连接到薄膜晶体管。 像素电极形成在单位像素中。 虚设开口设置在周边区域并与信号线间隔开。

    Display substrate and method of manufacturing the same
    24.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号:US07969522B2

    公开(公告)日:2011-06-28

    申请号:US12841554

    申请日:2010-07-22

    IPC分类号: G02F1/136

    摘要: A display substrate includes a first metal pattern, a first insulating layer, a first electrode, and a second metal pattern. The first metal pattern includes a gate line and a signal line. The first insulating layer is disposed on a substrate having the first metal pattern formed thereon. A first opening passes through the first insulating layer to partially expose the signal line. The first electrode is disposed on the first insulating layer corresponding to a unit pixel. The second metal pattern includes a connection electrode contacting the first electrode and the signal line through the first opening and a data line.

    摘要翻译: 显示基板包括第一金属图案,第一绝缘层,第一电极和第二金属图案。 第一金属图案包括栅极线和信号线。 第一绝缘层设置在其上形成有第一金属图案的基板上。 第一开口穿过第一绝缘层以部分地暴露信号线。 第一电极设置在对应于单位像素的第一绝缘层上。 第二金属图案包括通过第一开口接触第一电极和信号线的连接电极和数据线。

    Thin film transistor array panel and manufacturing method thereof
    25.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07884365B2

    公开(公告)日:2011-02-08

    申请号:US12043615

    申请日:2008-03-06

    摘要: A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

    摘要翻译: TFT阵列面板包括:彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二排出构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极,半导体,源极和漏极部件形成第一TFT,第二栅极,半导体,源极和漏极部件形成第二TFT。

    DISPLAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
    26.
    发明申请
    DISPLAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板,具有该基板的显示装置及其制造方法

    公开(公告)号:US20100182525A1

    公开(公告)日:2010-07-22

    申请号:US12487928

    申请日:2009-06-19

    IPC分类号: G02F1/136 H01L29/786

    摘要: A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

    摘要翻译: 显示基板包括绝缘基板,薄膜晶体管,接触电极和像素电极。 薄膜晶体管包括控制电极,半导体图案,第一电极和第二电极。 控制电极在绝缘基板上。 半导体图案在控制电极上。 第一电极位于半导体图案上。 第二电极与半导体图案上的第一电极间隔开。 接触电极包括接触部分和底切部分。 接触部分电连接到第二电极以部分地暴露半导体图案。 底切部分电连接到接触部分以覆盖半导体图案。 像素电极通过接触电极的接触部分电连接到第二电极。

    Thin film transistor array panel and manufacturing method thereof

    公开(公告)号:US20070004103A1

    公开(公告)日:2007-01-04

    申请号:US11516187

    申请日:2006-09-06

    IPC分类号: H01L21/84

    摘要: A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

    Display substrate and method of manufacturing the same
    28.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号:US07787067B2

    公开(公告)日:2010-08-31

    申请号:US12027607

    申请日:2008-02-07

    IPC分类号: G02F1/136

    摘要: A display substrate includes a first metal pattern, a first insulating layer, a first electrode, and a second metal pattern. The first metal pattern includes a gate line and a signal line. The first insulating layer is disposed on a substrate having the first metal pattern formed thereon. A first opening passes through the first insulating layer to partially expose the signal line. The first electrode is disposed on the first insulating layer corresponding to a unit pixel. The second metal pattern includes a connection electrode contacting the first electrode and the signal line through the first opening and a data line.

    摘要翻译: 显示基板包括第一金属图案,第一绝缘层,第一电极和第二金属图案。 第一金属图案包括栅极线和信号线。 第一绝缘层设置在其上形成有第一金属图案的基板上。 第一开口穿过第一绝缘层以部分地暴露信号线。 第一电极设置在对应于单位像素的第一绝缘层上。 第二金属图案包括通过第一开口接触第一电极和信号线的连接电极和数据线。

    Method of manufacturing display substrate having improved contact with pixel electrode
    29.
    发明授权
    Method of manufacturing display substrate having improved contact with pixel electrode 失效
    具有改善与像素电极接触的显示基板的制造方法

    公开(公告)号:US07563656B2

    公开(公告)日:2009-07-21

    申请号:US11616542

    申请日:2006-12-27

    IPC分类号: H01L21/00 H01L21/84

    摘要: A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

    摘要翻译: 显示基板包括绝缘基板,薄膜晶体管,接触电极和像素电极。 薄膜晶体管包括控制电极,半导体图案,第一电极和第二电极。 控制电极在绝缘基板上。 半导体图案在控制电极上。 第一电极位于半导体图案上。 第二电极与半导体图案上的第一电极间隔开。 接触电极包括接触部分和底切部分。 接触部分电连接到第二电极以部分地暴露半导体图案。 底切部分电连接到接触部分以覆盖半导体图案。 像素电极通过接触电极的接触部分电连接到第二电极。

    THIN FILM TRANSISTOR ARRAY PANEL AND A MANUFACTURING METHOD THEREOF
    30.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND A MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20090002587A1

    公开(公告)日:2009-01-01

    申请号:US12207869

    申请日:2008-09-10

    申请人: Joo-Ae Youn

    发明人: Joo-Ae Youn

    IPC分类号: G02F1/136 H01L29/04

    摘要: A method of manufacturing a thin film transistor array panel and a thin film transistor array panel are provided. The method includes: forming a gate line and a storage electrode line on a substrate; forming a gate insulating layer on the gate line and the storage electrode line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion on the passivation layer; etching the passivation layer using the photoresist to expose a portion of the data line and a first portion of the gate insulating layer; removing the second portion of the photoresist; etching the passivation layer and the first portion of the gate insulating layer using the photoresist to expose a second portion of the gate insulating layer and a portion of the drain electrode and a portion of the gate line; depositing a conductive film on the first transformed photoresist; and removing the first transformed photoresist to form a pixel electrode connected to the exposed portion of the drain electrode.

    摘要翻译: 提供了制造薄膜晶体管阵列面板和薄膜晶体管阵列面板的方法。 该方法包括:在基板上形成栅极线和存储电极线; 在栅极线和存储电极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 在所述钝化层上形成包括第一部分和第二部分的光致抗蚀剂; 使用所述光致抗蚀剂蚀刻所述钝化层以暴露所述数据线的一部分和所述栅极绝缘层的第一部分; 去除光致抗蚀剂的第二部分; 使用所述光致抗蚀剂蚀刻所述钝化层和所述栅极绝缘层的所述第一部分,以暴露所述栅极绝缘层的第二部分以及所述漏极电极的一部分和所述栅极线的一部分; 在第一转换的光致抗蚀剂上沉积导电膜; 以及去除所述第一变换的光致抗蚀剂以形成连接到所述漏电极的所述暴露部分的像素电极。