公开(公告)号：US08324002B2

公开(公告)日：2012-12-04

申请号：US13206228

申请日：2011-08-09

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

摘要： Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

摘要翻译： 提供一种形成和/或使用背面照射传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

公开(公告)号：US20100207230A1

公开(公告)日：2010-08-19

申请号：US12371146

申请日：2009-02-13

申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC分类号： H01L31/0352 ,  H01L21/76 ,  H01L21/66

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20100102411A1

公开(公告)日：2010-04-29

申请号：US12651236

申请日：2009-12-31

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/00 ,  H01L31/062

CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.

摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的金属栅极。

公开(公告)号：US07923279B2

公开(公告)日：2011-04-12

申请号：US12405454

申请日：2009-03-17

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US07824948B2

公开(公告)日：2010-11-02

申请号：US12357223

申请日：2009-01-21

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L27/14 ,  H01L33/00

CPC分类号： H01L21/26513 ,  H01L21/761 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US20100181634A1

公开(公告)日：2010-07-22

申请号：US12357223

申请日：2009-01-21

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L31/02 ,  H01L21/762 ,  H01L31/18

CPC分类号： H01L21/26513 ,  H01L21/761 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

公开(公告)号：US20090078973A1

公开(公告)日：2009-03-26

申请号：US11859848

申请日：2007-09-24

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/0232 ,  H01L31/062

CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

摘要： Provides is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.

摘要翻译： 提供一种背面照明传感器，其包括具有前表面和后表面的半导体衬底。 多个图像传感器元件形成在半导体衬底的前表面上。 图像传感器元件中的至少一个包括传输晶体管和光电检测器。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 在一个实施例中，栅极覆盖光电探测器至少5％。

公开(公告)号：US20080290441A1

公开(公告)日：2008-11-27

申请号：US11753480

申请日：2007-05-24

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/00 ,  H01L31/062

CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.

摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的栅极。

公开(公告)号：US20130320420A1

公开(公告)日：2013-12-05

申请号：US13615071

申请日：2012-09-13

申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Hsiao-Hui Tseng ,  Tzu-Hsuan Hsu

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Hsiao-Hui Tseng ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.

摘要翻译： 一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。 第一掺杂区域是第一导电类型，并具有第一杂质浓度。 第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。 第二掺杂区域包围第一掺杂区域。 第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

公开(公告)号：US08124495B2

公开(公告)日：2012-02-28

申请号：US11627883

申请日：2007-01-26

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/76

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。