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135 条记录 (耗时 0.032 秒)

    Optical disc
    21.
    发明授权
    Optical disc 失效
    光盘

    公开(公告)号：US5243590A

    公开(公告)日：1993-09-07

    申请号：US783167

    申请日：1991-10-28

    申请人： Katsuhisa Aratani

    发明人： Katsuhisa Aratani

    IPC分类号： G11B7/24 ,  G11B7/0055 ,  G11B7/243 ,  G11B7/257

    CPC分类号： G11B7/243 ,  G11B7/00557 ,  G11B7/257 ,  G11B2007/24314 ,  G11B2007/24316

    摘要： The present invention is concerned with an optical disc in which a layer of a material undergoing partial phase transitions within a scanning light spot of a readout light so as to be changed in this manner in its optical constants is formed on a base plate, on which phase pits are formed in advance in accordance with information signals, and in which the layer of the material is reset to its initial state, even if the pit period is less than the limit of diffraction, satisfactory reproduction free of crosstalks may be achieved to enable high density recording.

    摘要翻译： 本发明涉及一种光盘，其中在读取光的扫描光点内经历部分相变的材料层以其光学常数以这种方式变化的光盘形成在基板上， 相位凹坑根据信息信号预先形成，并且其中材料层被复位到其初始状态，即使凹坑周期小于衍射极限，也可以实现令人满意的没有串扰的再现，以使得能够实现 高密度录音。

    Magneto-optical recording medium
    22.
    发明授权
    Magneto-optical recording medium 失效
    磁光记录介质

    公开(公告)号：US4882231A

    公开(公告)日：1989-11-21

    申请号：US278022

    申请日：1988-11-30

    申请人： Katsuhisa Aratani

    发明人： Katsuhisa Aratani

    IPC分类号： G11B11/10 ,  G11B11/105

    CPC分类号： G11B11/10586 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12931 ,  Y10T428/12986

    摘要： The magneto-optical recording medium is disclosed which has a laminous structure with a first magnetic film suited to provide a large rotation angle of the plane of polarization by magneto-optical interaction, a third magnetic film having a great coercive force, and a second magnetic film interposed therebetween to magnetically couple the first and third magnetic films at room temperature, wherein such magnetic coupling is substantially interrupted at a temperature in a recording operation.Upon recording signal on the medium, a laser beam is irradiated to the medium and raises the temperature of the medium near Curie temperature Tc3 of the third magnetic film, thus direction of the magnetization is determined by the magnetic field applied to the irradiated portion.Upon cooling the irradiated portion, the second magnetic film serves to magnetically couple the first and third magnetic film, the magnetization of the third film is transferred to the first film. Thus the required magnetic field for recording is greatly reduced, and high C/N can be obtained resulting in high density recording.

    Memory element and memory device
    26.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08350248B2

    公开(公告)日：2013-01-08

    申请号：US12349644

    申请日：2009-01-07

    申请人： Shuichiro Yasuda ,  Tomohito Tsushima ,  Satoshi Sasaki ,  Katsuhisa Aratani

    发明人： Shuichiro Yasuda ,  Tomohito Tsushima ,  Satoshi Sasaki ,  Katsuhisa Aratani

    IPC分类号： H01L47/00

    CPC分类号： G11C13/02 ,  G11C2213/11 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625

    摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.

    摘要翻译： 提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。 存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。 存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。

    MEMORY ELEMENT AND MEMORY DEVICE
    29.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120069631A1

    公开(公告)日：2012-03-22

    申请号：US13303544

    申请日：2011-11-23

    申请人： Shuichiro Yasuda ,  Tomohito Tsushima ,  Satoshi Sasaki ,  Katsuhisa Aratani

    发明人： Shuichiro Yasuda ,  Tomohito Tsushima ,  Satoshi Sasaki ,  Katsuhisa Aratani

    IPC分类号： G11C11/00

    CPC分类号： G11C13/02 ,  G11C2213/11 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625

    摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.

    摘要翻译： 提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。 存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。 存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。

    MEMORY DEVICE
    30.
    发明申请
    MEMORY DEVICE 有权
    内存设备

    公开(公告)号：US20120037873A1

    公开(公告)日：2012-02-16

    申请号：US13197814

    申请日：2011-08-04

    申请人： Minoru Ikarashi ,  Katsuhisa Aratani

    发明人： Minoru Ikarashi ,  Katsuhisa Aratani

    IPC分类号： H01L45/00

    CPC分类号： H01L45/08 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/144

    摘要： A memory device includes: first and second electrodes; a semiconductor layer of a first conduction type provided on the first electrode side; a solid electrolyte layer containing movable ions and provided on the second electrode side; and an amorphous semiconductor layer of a second conduction type which is provided between the semiconductor layer and the solid electrolyte layer so as to be in contact with the solid electrolyte layer and, at the time of application of voltage to the first and second electrodes, reversibly changes to the first conduction type.

    摘要翻译： 存储器件包括：第一和第二电极; 设置在第一电极侧的第一导电类型的半导体层; 含有可动离子的固体电解质层，设置在第二电极侧; 以及设置在半导体层和固体电解质层之间以与固体电解质层接触的第二导电类型的非晶半导体层，并且在向第一和第二电极施加电压时可逆地 改变为第一导电类型。