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公开(公告)号：US08981325B2
公开(公告)日：2015-03-17
申请号：US12703247
申请日：2010-02-10
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译： 记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，存储薄膜4或与 记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。 存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。
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公开(公告)号：US08912516B2
公开(公告)日：2014-12-16
申请号：US13527779
申请日：2012-06-20
CPC分类号： H01L45/085 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/55 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/16 , H01L45/1608
摘要： A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.
摘要翻译： 一种存储元件，包括：第一电极，存储层和第二电极。 存储层包括含有氧化物的电阻变化层和设置在第一电极侧的电阻变化层，以及设置在单位离子源层中的两个以上的层叠结构的离子源层，单位离子源层 包括第一层和第二层，第一层含有一种或多种碲（Te），硫（S）和硒（Se）的硫族元素元素，以及容易移动的元素，其易于在 存储层，并且具有易于移动的元件从第一电极到第二电极的密度分布，并且第二层包含难以在存储层中移动的难移动元件。
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3.发明申请METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC 审中-公开用于制造光盘的方法和用于制造光盘的方法公开(公告)号：US20110279793A1
公开(公告)日：2011-11-17
申请号：US13187114
申请日：2011-07-20
IPC分类号： G03B27/00
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： An apparatus for manufacturing an optical disc master, having (a) a turntable upon which is received a disc having a resist layer composed of a resist material, the resist material comprising an incomplete oxide of a transition metal on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal, which increases the absorption of ultraviolet rays and visible light rays, the resist material being an amorphous inorganic material containing an oxide; and (b) an exposure system operatively configured to selectively expose the resist layer to ultraviolet rays or visible light.
摘要翻译： 一种用于制造光盘主机的设备，其具有（a）转盘，其上接收有具有由抗蚀剂材料构成的抗蚀剂层的光盘，所述抗蚀剂材料包括在基板上的过渡金属的不完全氧化物，氧含量 不完全氧化物小于对应于过渡金属价态的化学计量组成的氧含量，其增加紫外线和可见光线的吸收，抗蚀剂材料是含有氧化物的无定形无机材料; 和（b）曝光系统，可操作地构造成选择性地将抗蚀剂层暴露于紫外线或可见光。
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公开(公告)号：US20110175049A1
公开(公告)日：2011-07-21
申请号：US13004976
申请日：2011-01-12
IPC分类号： H01L45/00
CPC分类号： H01L45/142 , G11C13/0007 , G11C2213/51 , G11C2213/56 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/1625
摘要： A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.
摘要翻译： 存储器组件包括：第一电极; 记忆层; 和第二电极，其中，所述存储层包括高电阻层，所述高电阻层包含碲（Te）作为阴离子成分中的主要成分，并形成在所述第一电极侧上; 以及离子源层，其在碲（Te），硫（S）和硒（Se）中包含至少一种金属元素和至少一种硫属元素，并且形成在第二电极侧。
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5.发明授权公开(公告)号：US07648671B2
公开(公告)日：2010-01-19
申请号：US10502038
申请日：2003-11-20
IPC分类号： H05B6/00
CPC分类号： G11B7/261 , G11B7/1267
摘要： The method of the present invention includes an exposing step in which a laser beam for recording modulated by an information signal corresponding to an information signal of an information concave and convex pattern formed on the optical disc is applied to an inorganic resist layer 101 formed on a substrate 100 to form an exposed pattern corresponding to the information concave and convex pattern on the optical disc, and a development step in which a concave and convex pattern corresponding to the information concave and convex pattern by the inorganic resist layer is formed. By applying a laser beam for estimation to a predetermined area on the inorganic resist layer in the exposing step to estimate recorded signal characteristics of the exposed pattern by the inorganic resist layer using reflected light of the laser beam for estimation, and controlling power of the laser beam for recording based on the estimated result, the aimed information recording on the optical disc can reliably be obtained.
摘要翻译： 本发明的方法包括曝光步骤，其中将用与在光盘上形成的信息凹凸图案的信息信号对应的信息信号进行记录的激光束施加到形成在光盘上的无机抗蚀剂层101上 基板100，以形成对应于光盘上的信息凹凸图案的曝光图案，以及形成与无机抗蚀剂层的信息凹凸图案相对应的凹凸图案的显影步骤。 通过在曝光步骤中将用于估计的激光束施加到无机抗蚀剂层上的预定区域，以使用用于估计的激光束的反射光通过无机抗蚀剂层估计曝光图案的记录信号特性，并且控制激光器的功率 基于估计结果记录的光束，可以可靠地获得在光盘上记录的目标信息。
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公开(公告)号：US20080171290A1
公开(公告)日：2008-07-17
申请号：US12077119
申请日：2008-03-17
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
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公开(公告)号：USRE40136E1
公开(公告)日：2008-03-04
申请号：US11091006
申请日：2005-03-25
IPC分类号： B32B3/02
CPC分类号： G11B7/244 , G11B7/24 , G11B7/2531 , G11B7/2534 , G11B7/257 , G11B7/258 , G11B7/2585 , G11B2007/2571 , G11B2007/25713 , Y10T428/21
摘要： A multilayer optical disk having an information storage layer which can as well as be reproduced by a general purpose reproducing apparatus, for example, a compact disk player, and from which information can be read from other information storage layers by using an exclusive reproducing apparatus. The method of manufacturing a multilayer disk comprises the steps of forming a first substrate having a first information storage area enabling reproduction of information therein with a first light beam having a wavelength of 770 nm to 830 nm; forming a second substrate having a second information storage area enabling reproduction of information therein with a second light beam having a wavelength of 615-655 nm but which is relatively transparent with respect to said first light beam; and bonding said first substrate to said second substrate together without said first and second said information areas facing each other.
摘要翻译： 具有信息存储层的多层光盘，其可以由通用再现装置（例如，光盘播放器）再现，并且可以通过使用专用再现装置从其它信息存储层读取信息。 制造多层盘的方法包括以下步骤：形成具有第一信息存储区域的第一基板，该第一信息存储区域能够利用波长为770nm至830nm的第一光束再现其中的信息; 形成具有第二信息存储区域的第二基板，所述第二信息存储区域能够利用波长为615-655nm但相对于所述第一光束相对透明的第二光束再现信息; 以及将所述第一基板与所述第二基板结合在一起，而所述第一和第二信息区域彼此面对。
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公开(公告)号：US07175962B2
公开(公告)日：2007-02-13
申请号：US10474852
申请日：2003-02-20
IPC分类号： G03F7/004
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
摘要翻译： 抗蚀剂材料和纳米制造方法提供高分辨率纳米制造，而不需要使用例如电子束或离子束的昂贵的照射装置。 也就是说，抗蚀剂材料和纳米制造方法使用目前使用的曝光设备提供更精细的处理。 不完全氧化的过渡金属如W和Mo的抗蚀剂层被选择性地暴露和显影以以预定形式图案化。 本文中不完全氧化的过渡金属是相对于过渡金属的可能化合价的化学计量氧含量略低于含量的氧含量的化合物。 换句话说，化合物的氧含量低于对应于过渡金属的可能化合价的化学计量的氧含量。
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公开(公告)号：US20060092737A1
公开(公告)日：2006-05-04
申请号：US11265894
申请日：2005-11-03
IPC分类号： G11C7/02
CPC分类号： G11C13/0064 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2213/79
摘要： A memory includes: memory elements arranged in a matrix, each memory element having such characteristics that when an electric signal at a level equal to or higher than that of a first threshold signal is applied to the memory element, the resistance thereof is changed from a high value to a low value, and when an electric signal at a level equal to or higher than that of a second threshold signal is applied thereto, the resistance is changed from the low value to the high value, the polarities of the first and second threshold signals being different from each other; electric circuits for applying electric signals to the memory elements; and detection units each for measuring a current flowing through the corresponding memory element or a voltage applied thereto from the start of the application of electric signals to detect whether the resistance is high or low.
摘要翻译： 存储器包括：排列成矩阵的存储器元件，每个存储元件具有这样的特性，即当等于或高于第一阈值信号的电信号被施加到存储元件时，其电阻从 高值为低值，当施加等于或高于第二阈值信号的电信号时，电阻从低值变为高值，第一和第二极性的极性 阈值信号彼此不同; 用于向存储元件施加电信号的电路; 以及各自的检测单元，用于测量从开始施加电信号开始流过相应的存储元件的电流或施加到其上的电压，以检测电阻是高还是低。
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公开(公告)号：US06985429B2
公开(公告)日：2006-01-10
申请号：US10220207
申请日：2001-12-26
申请人： Katsuhisa Aratani , Shintaro Tanaka , Naoki Okawa
发明人： Katsuhisa Aratani , Shintaro Tanaka , Naoki Okawa
IPC分类号： G11B3/70
CPC分类号： G11B7/24038 , G11B7/258 , G11B7/259 , G11B7/26
摘要： According to the present invention, there is provided an optical recording medium including at least an information recording layer and a reflective film in which the reflective film is comprised of an AgCu alloy thin film containing Cu the content of which is greater than or equal to 3.0 [atomic %] and less than or equal to 6.5 [atomic %]. Thus, the optical recording medium can be made inexpensive and weather resistance of the optical recording medium can be improved, thereby making it possible to avoid characteristics of the optical recording medium from being deteriorated even after it has been stored for a long time.
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