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    Magnetoresistive element, and magnetic random access memory
    21.
    发明授权
    Magnetoresistive element, and magnetic random access memory 有权
    磁阻元件和磁性随机存取存储器

    公开(公告)号：US08174086B2

    公开(公告)日：2012-05-08

    申请号：US12739990

    申请日：2008-10-28

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.

    摘要翻译： 磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。 第一磁化自由层由铁磁材料形成，并且在厚度方向上具有磁各向异性。 另一方面，第二磁化自由层和第一磁化固定层由铁磁材料形成，并且在面内方向上具有磁各向异性。 第一磁化自由层包括：具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。 磁化自由区​​和第二磁化自由层磁耦合。 此外，无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。

    Magnetic random access memory
    22.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08159872B2

    公开(公告)日：2012-04-17

    申请号：US12865197

    申请日：2009-01-09

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    IPC分类号： G11C11/15

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/933 ,  Y10S977/935

    摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.

    摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化固定层，第一磁化自由层，夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层，第二磁化固定层，第二磁化自由层和第二非磁性层 层夹在第二磁化固定层和第二磁化自由层之间。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。 第三磁化固定层和第三磁化自由层具有面内磁各向异性。

    Magnetic random access memory
    23.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08149615B2

    公开(公告)日：2012-04-03

    申请号：US12865194

    申请日：2009-01-09

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222

    摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer.

    摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化自由层，第一磁化固定层，第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。 第一磁化自由层具有：第一和第二磁化固定区域; 和无磁化区域。 磁化自由区​​和第二磁化自由层彼此磁耦合。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。

    MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT
    25.
    发明申请
    MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT 有权
    磁阻元件MRAM和磁化元件的初始化方法

    公开(公告)号：US20110188298A1

    公开(公告)日：2011-08-04

    申请号：US13062764

    申请日：2009-10-16

    申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.

    摘要翻译： 磁阻元件具有：作为铁磁层的磁化记录层。 磁化记录层包括：具有可逆磁化强度的磁化反转区域; 第一磁化固定区域，其连接到所述磁化反转区域的第一边界并且具有沿第一方向固定的磁化方向; 以及连接到所述磁化反转区域的第二边界并且具有沿第二方向固定的磁化方向的第二磁化固定区域。 对于第二磁化固定区域的一部分，提供了至少一个磁化反转促进结构，其是磁化反转比剩余部分更容易的结构。

    Magnetic memory device and magnetic memory
    27.
    发明授权
    Magnetic memory device and magnetic memory 有权
    磁存储器和磁存储器

    公开(公告)号：US08791534B2

    公开(公告)日：2014-07-29

    申请号：US13806828

    申请日：2011-06-16

    申请人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Norikazu Ohshima

    发明人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Norikazu Ohshima

    IPC分类号： H01L43/00

    CPC分类号： H01L43/02 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228 ,  H01L43/08

    摘要： In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.

    摘要翻译： 在其中磁化自由层的两端的磁化被磁化固定层固定的垂直磁化畴壁运动MRAM中，防止了由于来自磁化固定层的泄漏磁场引起的写入电流的增加。 在第一边界线和第一垂直线之间存在第一位移，其中穿过第一磁化固定层的外周线的第一磁化自由层的曲线部分是第一边界线，链段 无磁化区域的中心和第一磁化固定区域的中心是第一段，作为第一段的垂直线并与第一边界线接触的段是第一垂直线 。

    Magnetic domain wall random access memory
    28.
    发明授权
    Magnetic domain wall random access memory 有权
    磁畴壁随机存取存储器

    公开(公告)号：US08040724B2

    公开(公告)日：2011-10-18

    申请号：US12671012

    申请日：2008-07-07

    申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

    发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

    IPC分类号： G11C11/15

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

    摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

    摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。

    MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY
    29.
    发明申请
    MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY 有权
    磁性域墙随机存取存储器

    公开(公告)号：US20100193890A1

    公开(公告)日：2010-08-05

    申请号：US12671012

    申请日：2008-07-07

    申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

    发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

    摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

    摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。