公开(公告)号：US08373148B2

公开(公告)日：2013-02-12

申请号：US11796073

申请日：2007-04-26

Applicant: Zhida Lan ,  Manuj Rathor ,  Joffre F. Bernard

Inventor： Zhida Lan ,  Manuj Rathor ,  Joffre F. Bernard

IPC: H01L45/00

CPC classification number: H01L45/04 ,  H01L45/145

Abstract: The present resistive memory device includes first and second electrodes. An active layer is situated between the first and second electrodes. The active layer with advantage has a thermal conductivity of 0.02 W/Kcm or less, and is surrounded by a body in contact with the layer, the body having a thermal conductivity of 0.01 W/Kcm or less.

Abstract translation: 本电阻性存储器件包括第一和第二电极。 有源层位于第一和第二电极之间。 有源层的导热系数为0.02W / K·cm以下，被与该层接触的主体围绕，该导体的导热率为0.01W / K·cm以下。

公开(公告)号：US08093698B2

公开(公告)日：2012-01-10

申请号：US11633844

申请日：2006-12-05

Applicant: Manuj Rathor ,  Matthew Buynoski ,  Joffre F. Bernard ,  Steven Avanzino ,  Suzette K. Pangrle

Inventor： Manuj Rathor ,  Matthew Buynoski ,  Joffre F. Bernard ,  Steven Avanzino ,  Suzette K. Pangrle

IPC: H01G4/224

CPC classification number: H01G4/224 ,  H01L23/26 ,  H01L27/101 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes a first electrode, a second electrode and an insulating layer between the first and second electrodes, which insulating layer may be susceptible to reduction by H2. A gettering layer is provided on and in contact with the first electrode, the gettering layer acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H2. A glue layer may be provided between the gettering layer and first electrode. An additional gettering layer may be provided on and in contact with the second electrode, and a glue layer may be provided between the second electrode and additional gettering layer.

Abstract translation: 电子器件包括第一电极，第二电极和第一和第二电极之间的绝缘层，该绝缘层可能易受H 2的还原。 吸气层设置在第一电极上并与第一电极接触，吸气层用作保护层，用于通过捕获和固定H2基本避免绝缘层的还原。 可以在吸气层和第一电极之间设置胶层。 另外的吸气层可以设置在第二电极上并与第二电极接触，并且胶层可以设置在第二电极和附加的吸气层之间。

公开(公告)号：US20090212283A1

公开(公告)日：2009-08-27

申请号：US12072588

申请日：2008-02-27

Applicant: Manuj Rathor ,  An Chen ,  Steven Avanzino ,  Suzette K. Pangrle

Inventor： Manuj Rathor ,  An Chen ,  Steven Avanzino ,  Suzette K. Pangrle

IPC: H01L27/06 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1021 ,  H01L27/101 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253

Abstract: In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.

Abstract translation: 在电子设备中，串联连接二极管和电阻式存储器件。 二极管可以采取各种形式，包括氧化物或硅层，并且二极管的一个层可以构成与该二极管串联的电阻存储器件的层。

公开(公告)号：US20080265240A1

公开(公告)日：2008-10-30

申请号：US11796073

申请日：2007-04-26

Applicant: Zhida Lan ,  Manuj Rathor ,  Joffre F. Bernard

Inventor： Zhida Lan ,  Manuj Rathor ,  Joffre F. Bernard

IPC: H01L45/00

CPC classification number: H01L45/04 ,  H01L45/145

Abstract: The present resistive memory device includes first and second electrodes. An active layer is situated between the first and second electrodes. The active layer with advantage has a thermal conductivity of 0.02 W/Kcm or less, and is surrounded by a body in contact with the layer, the body having a thermal conductivity of 0.01 W/Kcm or less.

Abstract translation: 本电阻性存储器件包括第一和第二电极。 有源层位于第一和第二电极之间。 有源层的导热系数为0.02W / K·cm以下，被与该层接触的主体围绕，该导体的导热率为0.01W / K·cm以下。

公开(公告)号：US20080130195A1

公开(公告)日：2008-06-05

申请号：US11633844

申请日：2006-12-05

Applicant: Manuj Rathor ,  Matthew Buynoski ,  Joffre F. Bernard ,  Steven Avanzino ,  Suzette K. Pangrle

Inventor： Manuj Rathor ,  Matthew Buynoski ,  Joffre F. Bernard ,  Steven Avanzino ,  Suzette K. Pangrle

IPC: H01G4/224

CPC classification number: H01G4/224 ,  H01L23/26 ,  H01L27/101 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes a first electrode, a second electrode and an insulating layer between the first and second electrodes, which insulating layer may be susceptible to reduction by H2. A gettering layer is provided on and in contact with the first electrode, the gettering layer acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H2. A glue layer may be provided between the first layer and first electrode. An additional gettering layer may be provided on and in contact with the second electrode, and a glue layer may be provided between the second electrode and additional gettering layer.

Abstract translation: 一种电子器件包括第一电极，第二电极和第一和第二电极之间的绝缘层，该绝缘层可能容易受到H 2 N的还原。 吸气层设置在第一电极上并与第一电极接触，吸气层用作保护层，用于基本上避免通过捕获和固定H 2 2来减少绝缘层。 胶层可以设置在第一层和第一电极之间。 另外的吸气层可以设置在第二电极上并与第二电极接触，并且胶层可以设置在第二电极和附加的吸气层之间。

公开(公告)号：US20080123401A1

公开(公告)日：2008-05-29

申请号：US11521204

申请日：2006-09-14

Applicant: Suzette K. Pangrle ,  Steven Avanzino ,  Sameer Haddad ,  Michael VanBuskirk ,  Manuj Rathor ,  James Xie ,  Kevin Song ,  Christie Marrian ,  Bryan Choo ,  Fei Wang ,  Jeffrey A. Shields

Inventor： Suzette K. Pangrle ,  Steven Avanzino ,  Sameer Haddad ,  Michael VanBuskirk ,  Manuj Rathor ,  James Xie ,  Kevin Song ,  Christie Marrian ,  Bryan Choo ,  Fei Wang ,  Jeffrey A. Shields

IPC: G11C11/34 ,  H01L21/44

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1675 ,  H01L45/1683

Abstract: A present method of fabricating a memory device includes the steps of providing a dielectric layer;, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.

Abstract translation: 本发明的制造存储器件的方法包括以下步骤：提供电介质层;在电介质层中提供开口，在开口中提供第一导电体，在开口中提供开关体，第一导电体和开关体 填充开口，并且在开关体上提供第二导电体。 在替代实施例中，在第一介电层上提供第二电介质层，并且开关体设置在第二电介质层的开口中。