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21.发明申请公开(公告)号：US20120062103A1
公开(公告)日：2012-03-15
申请号：US13037635
申请日：2011-03-01
申请人： Aoi OKADA , Yumi Fukuda , Naotoshi Matsuda , Iwao Mitsuishi , Shinya Nunoue
发明人： Aoi OKADA , Yumi Fukuda , Naotoshi Matsuda , Iwao Mitsuishi , Shinya Nunoue
CPC分类号： C09K11/7731 , C09K11/0883 , C09K11/7734 , H01L27/15 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1−xECx)aM1bAlOcNd (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0
摘要翻译： 本实施方案提供由下式（1）表示的红色发光荧光物质：（M1-xECx）aM1bAlOcNd（1）。 在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素，稀土元素和IVA族元素的元素; EC是选自Eu，Ce，Mn，Tb，Yb，Dy，Sm，Tm，Pr，Nd，Pm，Ho，Er，Cr，Sn，Cu，Zn，As，Ag，Cd， Sb，Au，Hg，Tl，Pb，Bi和Fe; M1与M不同，选自四价元素; x，a，b，c和d分别是满足条件0
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公开(公告)号：US20130234591A1
公开(公告)日：2013-09-12
申请号：US13677675
申请日：2012-11-15
申请人： Yasushi Hattori , Naotoshi Matsuda , Kunio Ishida , Aoi Okada , Ryosuke Hiramatsu , Masahiro Kato , Iwao Mitsuishi
发明人： Yasushi Hattori , Naotoshi Matsuda , Kunio Ishida , Aoi Okada , Ryosuke Hiramatsu , Masahiro Kato , Iwao Mitsuishi
CPC分类号： H05B33/12 , H01L33/504 , H01L33/505 , H01L33/507 , H01L2224/48091 , H05B33/04 , H01L2924/00014
摘要： A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width.
摘要翻译： 实施方式的白色发光装置包括：发光元件，具有波长范围为430〜470nm的波长的发光元件，形成在发光元件上方的第一荧光体，发光元件的第一峰值波长 530〜580nm，具有第一半宽度，以及形成在发光元件上的第二荧光材料，并且发射具有比第一峰值波长长的第二峰值波长的光，并且其范围为570-620nm，包括 并且具有100nm或更小的第二半宽度并且等于或小于第一半宽度。
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公开(公告)号：US20130241395A1
公开(公告)日：2013-09-19
申请号：US13609891
申请日：2012-09-11
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H05B33/14 , H01L2924/00014
摘要： The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe (1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0
摘要翻译： 本实施方式提供铕活化氮氧化物荧光体及其制造方法。 该荧光体发射在630nm以上具有峰值的红色发光，并且可以通过使用廉价的氧化物作为含有碱土金属如锶的原料来生产。 氧氮化铟荧光体由二价铕活化并由式（1）表示：（M1-xEux）AlaSibOcNdCe（1）。 在该式中，M是碱土金属，x，a，b，c，d和e是满足条件0
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公开(公告)号：US09187693B2
公开(公告)日：2015-11-17
申请号：US13609891
申请日：2012-09-11
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H05B33/14 , H01L2924/00014
摘要： The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe (1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0
摘要翻译： 本实施方式提供铕活化氮氧化物荧光体及其制造方法。 该荧光体发射在630nm以上具有峰值的红色发光，并且可以通过使用廉价的氧化物作为含有碱土金属如锶的原料来生产。 氧氮化铟荧光体由二价铕活化并由式（1）表示：（M1-xEux）AlaSibOcNdCe（1）。 在该式中，M是碱土金属，x，a，b，c，d和e是满足条件0
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公开(公告)号：US20090321771A1
公开(公告)日：2009-12-31
申请号：US12493585
申请日：2009-06-29
申请人： Yasushi Hattori , Shinji Saito , Ryosuke Hiramatsu , Shinya Nunoue , Iwao Mitsuishi , Naotoshi Matsuda
发明人： Yasushi Hattori , Shinji Saito , Ryosuke Hiramatsu , Shinya Nunoue , Iwao Mitsuishi , Naotoshi Matsuda
IPC分类号： H01L33/00
CPC分类号： H01S5/02292 , G02F1/353 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/32341 , H01S5/327 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.
摘要翻译： 半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。 可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。 发光层吸收从半导体发光元件发射的光并输出可见光。 发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。
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公开(公告)号：US08124995B2
公开(公告)日：2012-02-28
申请号：US12493585
申请日：2009-06-29
申请人： Yasushi Hattori , Shinji Saito , Ryosuke Hiramatsu , Shinya Nunoue , Iwao Mitsuishi , Naotoshi Matsuda
发明人： Yasushi Hattori , Shinji Saito , Ryosuke Hiramatsu , Shinya Nunoue , Iwao Mitsuishi , Naotoshi Matsuda
IPC分类号： H01L33/00
CPC分类号： H01S5/02292 , G02F1/353 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/32341 , H01S5/327 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.
摘要翻译： 半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。 可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。 发光层吸收从半导体发光元件发射的光并输出可见光。 发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。
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公开(公告)号：US20080238298A1
公开(公告)日：2008-10-02
申请号：US11857179
申请日：2007-09-18
CPC分类号： H01J31/127 , C09K11/615 , C09K11/642 , H01J9/227 , H01J29/20 , H01J29/28
摘要： An image display device is provided, which includes a first substrate having a cold-cathode electron-emission element which emits electrons, and a second substrate which is spaced from and opposed to the first substrate. The second substrate has a transparent substrate, a light-emitting layer provided on the transparent substrate and including phosphor particles containing zinc sulfide as a base material, a boron nitride film disposed on a surface of the light-emitting layer, and an anode applying a voltage to the light-emitting layer.
摘要翻译： 提供了一种图像显示装置，其包括具有发射电子的冷阴极电子发射元件的第一基板和与第一基板间隔开并与之相对的第二基板。 第二基板具有透明基板，设置在透明基板上的发光层，包含含有硫化锌作为基材的荧光体粒子，配置在发光层的表面的氮化硼膜， 电压到发光层。
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公开(公告)号：US09133391B2
公开(公告)日：2015-09-15
申请号：US13601219
申请日：2012-08-31
申请人： Yumi Fukuda , Iwao Mitsuishi , Keiko Albessard
发明人： Yumi Fukuda , Iwao Mitsuishi , Keiko Albessard
CPC分类号： C09K11/7718 , C09K11/0883 , C09K11/7716 , C09K11/7721 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H05B33/14 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below: (M1-xCex)2yAlzSi10-zOuNw Formula 1 wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions: 0
摘要翻译： 根据一个实施方案，当在具有250-500nm波长的发光峰的光激发时，发光材料在500-600nm波长范围内表现出发光峰。 发光材料具有以下通式1所示的组成：（M1-xCex）2yAlzSi10-zOuNw式1其中M表示Sr，一部分Sr可被选自Ba，Ca和Mg中的至少一种取代; x，y，z，u和w满足以下条件：0
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公开(公告)号：US20130241387A1
公开(公告)日：2013-09-19
申请号：US13601219
申请日：2012-08-31
申请人： Yumi FUKUDA , Iwao Mitsuishi , Keiko Albessard
发明人： Yumi FUKUDA , Iwao Mitsuishi , Keiko Albessard
CPC分类号： C09K11/7718 , C09K11/0883 , C09K11/7716 , C09K11/7721 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H05B33/14 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below: (M1-xCex)2yAlzSi10-zOuNw Formula 1 wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions: 0
摘要翻译： 根据一个实施方案，当在具有250-500nm波长的发光峰的光激发时，发光材料在500-600nm波长范围内表现出发光峰。 发光材料具有以下式1所示的组成：（M1-xCex）2yAlzSi10-zOuNwFormule1其中M表示Sr，Sr的一部分可以被选自Ba，Ca和Mg中的至少一种取代; x，y，z，u和w满足以下条件：0
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公开(公告)号：US5811924A
公开(公告)日：1998-09-22
申请号：US715478
申请日：1996-09-18
申请人： Miwa Okumura , Naotoshi Matsuda , Keiko Albessard , Masaaki Tamatani , Fusayoshi Kido , Iwao Mitsuishi
发明人： Miwa Okumura , Naotoshi Matsuda , Keiko Albessard , Masaaki Tamatani , Fusayoshi Kido , Iwao Mitsuishi
摘要： A phosphor film structure comprising a substrate and a phosphor film formed on the substrate, wherein the phosphor film comprises ultrafine phosphor particles having an average diameter of 200 nm or less, and obtained by heating a phosphor material to vaporize and rapidly quenching to solidify, and a haze of the phosphor film to a luminous flux of 380-760 nm in wavelength is 50% or less.
摘要翻译： 一种荧光体膜结构，包括在基板上形成的基板和荧光膜，其中，所述荧光体膜包含平均直径为200nm以下的特细荧光体颗粒，并且通过加热荧光体材料而蒸发并快速骤冷而得到固化， 荧光体膜的波长对波长380-760nm的光束的雾度为50％以下。
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