摘要:
According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
摘要翻译:根据一个实施方案,发光材料在具有在250至520nm的波长范围内的发光峰的光激发时,显示在570至670nm的波长范围内的发光峰。 发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。 主体材料由Eu活化,包括Sr和Ca,以满足关系:0.008@MCa/(MSr + MCa)@ 0.114,其中MCa是Ca的摩尔数,MSr是Sr的摩尔数。
摘要:
A light emitting device according to embodiments has: a substrate; first light emitting units arranged along a first straight line on the substrate; second light emitting units arranged along a second straight line on the substrate, the second straight line being parallel to the first straight line, the second light emitting units having an emission color different from the first light emitting units; and third light emitting units arranged along a third straight line on the substrate, the third straight line being parallel to the first and second straight lines, the third light emitting units having an emission color different from the first and second light emitting units, wherein a distance between light emitting units of a same emission color is longer than a minimum distance between light emitting units of different emission colors.
摘要:
According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
摘要翻译:根据一个实施方案,发光材料在具有在250至520nm的波长范围内的发光峰的光激发时,显示在570至670nm的波长范围内的发光峰。 发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。 主体材料由Eu活化,包括Sr和Ca,以满足0.008&nlE的关系; MCa /(MSr + MCa)≦̸ 0.114,其中MCa是Ca的摩尔数,MSr是Sr的摩尔数 。
摘要:
A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width.
摘要:
According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd formula 1 wherein x, a, b, c and d satisfy following condition: 0
摘要:
The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.
摘要:
The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.
摘要:
A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm; plural red fluorescent layers that are formed above the light emitting element to include a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and plural green fluorescent layers that are formed above the light emitting element to include a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers.
摘要:
A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.
摘要:
A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; a first fluorescent layer formed on each of the first light emitting elements, the first fluorescent layer including a first phosphor; and a second fluorescent layer formed on each of the second light emitting elements, the second fluorescent layer including a second phosphor. The second phosphor is higher than the first phosphor in luminous efficiency at 50° C., and is lower than the first phosphor in the luminous efficiency at 150° C.