公开(公告)号：US11594556B2

公开(公告)日：2023-02-28

申请号：US17378333

申请日：2021-07-16

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  DaeHwan Kim ,  JuHeyuck Baeck ,  Jiyong Noh

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3233

Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US20220190170A1

公开(公告)日：2022-06-16

申请号：US17398767

申请日：2021-08-10

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/786 ,  G09G3/3233 ,  H01L27/12

Abstract: One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

公开(公告)号：US11171245B2

公开(公告)日：2021-11-09

申请号：US16519577

申请日：2019-07-23

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.