公开(公告)号：US09704836B2

公开(公告)日：2017-07-11

申请号：US15014636

申请日：2016-02-03

Applicant: MediaTek Inc.

Inventor： Tzu-Hung Lin ,  I-Hsuan Peng ,  Ching-Wen Hsiao

IPC: H01L23/485 ,  H01L25/10 ,  H01L21/02 ,  H01L25/16 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L23/498

CPC classification number: H01L25/16 ,  H01L23/3107 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first semiconductor die. A first redistribution layer (RDL) structure is coupled to the first semiconductor die. The first redistribution layer (RDL) structure includes a first conductive trace disposed at a first layer-level. A second conductive trace is disposed at a second layer-level. A first inter-metal dielectric (IMD) layer and a second inter-metal dielectric (IMD) layer, which is beside the first inter-metal dielectric (IMD) layer, are disposed between the first conductive trace and the second conductive trace.