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    Methods of Forming Patterns
    22.
    发明申请
    Methods of Forming Patterns 有权
    形成模式的方法

    公开(公告)号：US20140179115A1

    公开(公告)日：2014-06-26

    申请号：US14192410

    申请日：2014-02-27

    Applicant: Micron Technology, Inc.

    Inventor： Scott E. Sills ,  Gurtej S. Sandhu ,  John Smythe ,  Ming Zhang

    IPC: H01L21/027

    CPC classification number: H01L21/0274 ,  G03F7/20 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338

    Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

    Abstract translation: 一些实施例包括形成开口图案的方法。 所述方法可以包括在衬底上形成间隔的特征。 特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。 第一材料可以沿着特征的顶部和侧壁形成。 第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。 在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。 然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

    Memory cells and memory cell arrays
    26.
    发明授权
    Memory cells and memory cell arrays 有权
    存储单元和存储单元阵列

    公开(公告)号：US09123888B2

    公开(公告)日：2015-09-01

    申请号：US14448352

    申请日：2014-07-31

    Applicant: Micron Technology, Inc.

    Inventor： Scott E. Sills ,  Gurtej S. Sandhu ,  Sanh D. Tang ,  John Smythe

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1226 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/085 ,  H01L45/124 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148

    Abstract: Some embodiments include memory cells. The memory cells may have a first electrode, and a trench-shaped programmable material structure over the first electrode. The trench-shape defines an opening. The programmable material may be configured to reversibly retain a conductive bridge. The memory cell may have an ion source material directly against the programmable material, and may have a second electrode within the opening defined by the trench-shaped programmable material. Some embodiments include arrays of memory cells. The arrays may have first electrically conductive lines, and trench-shaped programmable material structures over the first lines. The trench-shaped structures may define openings within them. Ion source material may be directly against the programmable material, and second electrically conductive lines may be over the ion source material and within the openings defined by the trench-shaped structures.

    Abstract translation: 一些实施例包括存储器单元。 存储单元可以具有第一电极和在第一电极上方的沟槽状可编程材料结构。 沟槽形状限定开口。 可编程材料可以被配置为可逆地保持导电桥。 存储单元可以具有直接抵靠可编程材料的离子源材料，并且可以在由沟槽状可编程材料限定的开口内具有第二电极。 一些实施例包括存储器单元阵列。 阵列可以具有第一导电线，以及在第一线上的沟槽状可编程材料结构。 沟槽状结构可以在其内限定开口。 离子源材料可以直接抵靠可编程材料，并且第二导电线可以在离子源材料之上并且在由沟槽状结构限定的开口内。

    Memory Cells and Memory Cell Arrays
    27.
    发明申请
    Memory Cells and Memory Cell Arrays 有权
    存储单元和存储单元阵列

    公开(公告)号：US20150221864A1

    公开(公告)日：2015-08-06

    申请号：US14687738

    申请日：2015-04-15

    Applicant: Micron Technology, Inc.

    Inventor： Scott E. Sills ,  Gurtej S. Sandhu ,  Sanh D. Tang ,  John Smythe

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1226 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/085 ,  H01L45/124 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148

    Abstract: Some embodiments include memory cells. The memory cells may have a first electrode, and a trench-shaped programmable material structure over the first electrode. The trench-shape defines an opening. The programmable material may be configured to reversibly retain a conductive bridge. The memory cell may have an ion source material directly against the programmable material, and may have a second electrode within the opening defined by the trench-shaped programmable material. Some embodiments include arrays of memory cells. The arrays may have first electrically conductive lines, and trench-shaped programmable material structures over the first lines. The trench-shaped structures may define openings within them. Ion source material may be directly against the programmable material, and second electrically conductive lines may be over the ion source material and within the openings defined by the trench-shaped structures.

    Abstract translation: 一些实施例包括存储器单元。 存储单元可以具有第一电极和在第一电极上方的沟槽状可编程材料结构。 沟槽形状限定开口。 可编程材料可以被配置为可逆地保持导电桥。 存储单元可以具有直接抵靠可编程材料的离子源材料，并且可以在由沟槽状可编程材料限定的开口内具有第二电极。 一些实施例包括存储器单元阵列。 阵列可以具有第一导电线，以及在第一线上的沟槽状可编程材料结构。 沟槽状结构可以在其内限定开口。 离子源材料可以直接抵靠可编程材料，并且第二导电线可以在离子源材料之上并且在由沟槽状结构限定的开口内。

    Memory cells and methods of forming memory cells
    28.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US08907315B2

    公开(公告)日：2014-12-09

    申请号：US14182491

    申请日：2014-02-18

    Applicant: Micron Technology, Inc.

    Inventor： John Smythe ,  Gurtej S. Sandhu

    IPC: H01L47/00 ,  H01L29/00 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/12 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/16 ,  H01L45/1675

    Abstract: A method of forming a memory cell includes forming programmable material within an opening in dielectric material over an elevationally inner conductive electrode of the memory cell. Conductive electrode material is formed over the dielectric material and within the opening. The programmable material within the opening has an elevationally outer edge surface angling elevationally and laterally inward relative to a sidewall of the opening. The conductive electrode material is formed to cover over the angling surface of the programmable material within the opening. The conductive electrode material is removed back at least to an elevationally outermost surface of the dielectric material and to leave the conductive electrode material covering over the angling surface of the programmable material within the opening. The conductive electrode material constitutes at least part of an elevationally outer conductive electrode of the memory cell. Memory cells independent of method of manufacture are also disclosed.

    Abstract translation: 形成存储单元的方法包括在电介质材料的开口内形成可编程材料，该存储单元在存储单元的顶部内导电电极之上。 导电电极材料形成在电介质材料上并且在开口内。 开口内的可编程材料具有相对于开口的侧壁正向和横向向内倾斜的垂直外边缘表面。 导电电极材料形成为覆盖开口内可编程材料的倾斜表面。 导电电极材料至少移除到介电材料的最外表面，并将导电电极材料覆盖在开口内的可编程材料的倾斜表面上。 导电电极材料构成存储单元的正面外导电电极的至少一部分。 还公开了与制造方法无关的存储单元。

    Memory cell arrays
    29.
    发明授权
    Memory cell arrays 有权
    存储单元阵列

    公开(公告)号：US08822974B2

    公开(公告)日：2014-09-02

    申请号：US13856561

    申请日：2013-04-04

    Applicant: Micron Technology, Inc.

    Inventor： Scott E. Sills ,  Gurtej S. Sandhu ,  Sanh D. Tang ,  John Smythe

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1226 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/085 ,  H01L45/124 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148

    Abstract: Some embodiments include memory cells. The memory cells may have a first electrode, and a trench-shaped programmable material structure over the first electrode. The trench-shape defines an opening. The programmable material may be configured to reversibly retain a conductive bridge. The memory cell may have an ion source material directly against the programmable material, and may have a second electrode within the opening defined by the trench-shaped programmable material. Some embodiments include arrays of memory cells. The arrays may have first electrically conductive lines, and trench-shaped programmable material structures over the first lines. The trench-shaped structures may define openings within them. Ion source material may be directly against the programmable material, and second electrically conductive lines may be over the ion source material and within the openings defined by the trench-shaped structures.

    Abstract translation: 一些实施例包括存储器单元。 存储单元可以具有第一电极和在第一电极上方的沟槽状可编程材料结构。 沟槽形状限定开口。 可编程材料可被配置为可逆地保持导电桥。 存储单元可以具有直接抵靠可编程材料的离子源材料，并且可以在由沟槽状可编程材料限定的开口内具有第二电极。 一些实施例包括存储器单元阵列。 阵列可以具有第一导电线，以及在第一线上的沟槽状可编程材料结构。 沟槽状结构可以在其内限定开口。 离子源材料可以直接抵靠可编程材料，并且第二导电线可以在离子源材料之上并且在由沟槽状结构限定的开口内。

    METHODS OF SELF-ALIGNED GROWTH OF CHALCOGENIDE MEMORY ACCESS DEVICE
    30.
    发明申请
    METHODS OF SELF-ALIGNED GROWTH OF CHALCOGENIDE MEMORY ACCESS DEVICE 有权
    CHALCOGENIDE MEMORY ACCESS DEVICE的自对准生长方法

    公开(公告)号：US20140166972A1

    公开(公告)日：2014-06-19

    申请号：US14185094

    申请日：2014-02-20

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Neil Greeley ,  Gurtej Sandhu ,  John Smythe ,  Bhaskar Srinivasan

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

    Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

    Abstract translation: 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

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