Apparatuses and methods including multilevel command and address signals

    公开(公告)号:US11386940B2

    公开(公告)日:2022-07-12

    申请号:US16875798

    申请日:2020-05-15

    Inventor: Kang-Yong Kim

    Abstract: Multilevel command and address (CA) signals are used to provide commands and memory addresses from a controller to a memory system. Using multilevel signals CA signals may allow for using fewer signals compared to binary signals to represent a same number of commands and/or address space, or using a same number of multilevel CA signals to represent a larger number of commands and/or address space. A number of external command/address terminals may be reduced without reducing a set of commands and/or address space. Alternatively, a number of external terminals may be maintained, but provide for an expanded set of commands and/or address space.

    Equalization for Pulse-Amplitude Modulation

    公开(公告)号:US20220209998A1

    公开(公告)日:2022-06-30

    申请号:US17562588

    申请日:2021-12-27

    Abstract: Described apparatuses and methods are directed to equalization with pulse-amplitude modulation (PAM) signaling. As bus frequencies have increased, the time for correctly transitioning between voltage levels has decreased, which can lead to errors. Symbol decoding reliability can be improved with equalization, like with decision-feedback equalization (DFE). DFE, however, can be expensive for chip area and power usage. Therefore, instead of applying DFE to all voltage level determination paths in a receiver, DFE can be applied to a subset of such determination paths. With PAM4 signaling, for example, a DFE circuit can be coupled between an output and an input of a middle slicer. In some cases, symbol detection reliability can be maintained even with fewer DFE circuits by compressing a middle eye of the PAM4 signal. The other two eyes thus have additional headroom for expansion. Encoding schemes, impedance terminations, or reference voltage levels can be tailored accordingly.

    Apparatuses and methods including memory commands for semiconductor memories

    公开(公告)号:US11347666B2

    公开(公告)日:2022-05-31

    申请号:US17032152

    申请日:2020-09-25

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    Automated Error Correction with Memory Refresh

    公开(公告)号:US20220066655A1

    公开(公告)日:2022-03-03

    申请号:US17460013

    申请日:2021-08-27

    Abstract: Described apparatuses and methods provide automated error correction with memory refresh. Memory devices can include error correction code (ECC) technology to detect or correct one or more bit-errors in data. Dynamic random-access memory (DRAM), including low-power double data rate (LPPDR) synchronous DRAM (SDRAM), performs refresh operations to maintain data stored in a memory array. A refresh operation can be a self-refresh operation or an auto-refresh operation. Described implementations can combine ECC technology with refresh operations to determine a data error with data that is being refreshed or to correct erroneous data that is being refreshed. In an example, data for a read operation is checked for errors. If an error is detected, a corresponding address can be stored. Responsive to the corresponding address being refreshed, corrected data is stored at the corresponding address in conjunction with the refresh operation. Alternatively, data being refreshed can be checked for an error.

    MEMORY WEAR MANAGEMENT
    25.
    发明申请

    公开(公告)号:US20220011944A1

    公开(公告)日:2022-01-13

    申请号:US17349634

    申请日:2021-06-16

    Abstract: Methods, systems, and devices for memory wear management are described. A device may include an interface controller and a non-volatile memory. The interface controller may manage wear-leveling procedures for memory banks in the non-volatile memory. For example, the interface controller may select a row in a memory bank for the wear-leveling procedure. The interface controller may store data from the row in a buffer in the interface controller. The interface controller may then transfer the data to the non-volatile memory so that the non-volatile memory can write the data to a second row of the memory bank.

    Apparatuses and methods for setting a duty cycle adjuster for improving clock duty cycle

    公开(公告)号:US11200931B2

    公开(公告)日:2021-12-14

    申请号:US17155434

    申请日:2021-01-22

    Inventor: Kang-Yong Kim

    Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.

    Apparatuses and methods for setting a duty cycle adjuster for improving clock duty cycle

    公开(公告)号:US11100967B2

    公开(公告)日:2021-08-24

    申请号:US16167303

    申请日:2018-10-22

    Inventor: Kang-Yong Kim

    Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.

    APPARATUSES AND METHODS INCLUDING MEMORY COMMANDS FOR SEMICONDUCTOR MEMORIES

    公开(公告)号:US20210232514A1

    公开(公告)日:2021-07-29

    申请号:US17167475

    申请日:2021-02-04

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    APPARATUSES AND METHODS INCLUDING MEMORY COMMANDS FOR SEMICONDUCTOR MEMORIES

    公开(公告)号:US20210011868A1

    公开(公告)日:2021-01-14

    申请号:US17032152

    申请日:2020-09-25

    Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.

    Apparatuses and methods for setting a duty cycle adjuster for improving clock duty cycle

    公开(公告)号:US10748586B2

    公开(公告)日:2020-08-18

    申请号:US16799599

    申请日:2020-02-24

    Inventor: Kang-Yong Kim

    Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.

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