公开(公告)号：US10950316B2

公开(公告)日：2021-03-16

申请号：US16990137

申请日：2020-08-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Tecla Ghilardi ,  Tommaso Vali ,  Emilio Camerlenghi ,  William C. Filipiak ,  Andrea D'Alessandro

IPC: G11C16/26 ,  G11C16/34 ,  G11C5/06 ,  G11C11/413 ,  G11C8/08

Abstract: Apparatus having plurality of data lines each selectively connected to a respective string of series-connected memory cells, a plurality of registers each configured to indicate a state of a respective data line, and logic configured to indicate when each data line of the plurality of data lines has a particular state might facilitate determination of a pass voltage of a read operation.

公开(公告)号：US20210035630A1

公开(公告)日：2021-02-04

申请号：US17074690

申请日：2020-10-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Changhyun Lee ,  Akira Goda ,  William C. Filipiak

IPC: G11C11/56 ,  G11C16/10 ,  G11C16/34 ,  G11C16/04

Abstract: One embodiment of a method for programming multiple-level memory cells includes programming lower page data to memory cells in a first pass of a multiple-pass programming operation. The method includes programming higher page data to the memory cells in a second pass of the multiple-pass programming operation such that higher page data subject to the programmed lower page data is programmed prior to higher page data subject to erase data.

公开(公告)号：US20200372961A1

公开(公告)日：2020-11-26

申请号：US16990137

申请日：2020-08-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Tecla Ghilardi ,  Tommaso Vali ,  Emilio Camerlenghi ,  William C. Filipiak ,  Andrea D'Alessandro

IPC: G11C16/34 ,  G11C16/26 ,  G11C8/08 ,  G11C11/413 ,  G11C5/06

Abstract: Apparatus having plurality of data lines each selectively connected to a respective string of series-connected memory cells, a plurality of registers each configured to indicate a state of a respective data line, and logic configured to indicate when each data line of the plurality of data lines has a particular state might facilitate determination of a pass voltage of a read operation.

公开(公告)号：US10777286B2

公开(公告)日：2020-09-15

申请号：US16267488

申请日：2019-02-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Tecla Ghilardi ,  Tommaso Vali ,  Emilio Camerlenghi ,  William C. Filipiak ,  Andrea D'Alessandro

IPC: G11C16/26 ,  G11C16/34 ,  G11C8/08 ,  G11C11/413 ,  G11C5/06

Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include sensing a state of each data line of a plurality of data lines while increasing a voltage level applied to each access line of a plurality of access lines commonly connected to a plurality of strings of series-connected memory cells, ceasing increasing the voltage level applied to each access line of the plurality of access lines in response to the state of each data line of the plurality of data lines having a particular condition, changing a voltage level applied to a particular access line of the plurality of access lines to a particular voltage level, and sensing a state of each data line of a subset of the plurality of data lines while applying the particular voltage level to the particular access line.