摘要:
An optical intensity-to-phase converter according to the present invention includes first and second waveguides to which a first input light is input, a third waveguide to which a second input light is input, and an interaction region that is provided in common on the second and third waveguides in which the first and second input lights are multiplexed and interact. The optical intensity-to-phase converter provides delay to output lights output from the first and second waveguides based on intensity of the first or second input light. Then, it is possible to provide an optical intensity-to-phase converter that enables simple configuration of an optical A/D converter.
摘要:
Disclosed is a two-dimensional X-ray detector array inspection method capable of recognizing two-dimensional X-ray detector arrays unsuitable for X-ray imaging by means of identifying quickly growing defective pixels. The two-dimensional X-ray detector array inspection method involves a bias voltage step for repeated supply and stopping of a bias voltage from a common electrode; a dark current value measurement step for measuring the pixel values of pixels in a non-X-ray-irradiating state; a defective pixel identification step for identifying defective pixels on the basis of the pixel values of the pixels measured in the dark current value measurement step; and a determination step for determining whether or not the two-dimensional X-ray array detector is suitable on the basis of the size of the missing pixel chunks or the total number of defective pixels identified in defective pixel identification step.
摘要:
This load cell attachment structure includes a male screw which is formed on a load sensing part of the load cell, a nut which attaches the load cell to the attachment plate by engaging with the male screw, and a wave washer which is disposed between the attachment plate and the nut.
摘要:
Disclosed is a two-dimensional X-ray detector array inspection method capable of recognizing two-dimensional X-ray detector arrays unsuitable for X-ray imaging by means of identifying quickly growing defective pixels. The two-dimensional X-ray detector array inspection method involves a bias voltage step for repeated supply and stopping of a bias voltage from a common electrode; a dark current value measurement step for measuring the pixel values of pixels in a non-X-ray-irradiating state; a defective pixel identification step for identifying defective pixels on the basis of the pixel values of the pixels measured in the dark current value measurement step; and a determination step for determining whether or not the two-dimensional X-ray array detector is suitable on the basis of the size of the missing pixel chunks or the total number of defective pixels identified in defective pixel identification step.
摘要:
An angular velocity detection circuit is connected to a resonator for making excited vibration on the basis of a drive signal and detects an angular velocity. The angular velocity detection circuit includes: a self-vibration component extraction unit that receives, from the resonator, a detection signal including an angular velocity component based on a Coriolis force and a self-vibration component based on the excited vibration of the resonator and extracts the self-vibration component from the detection signal; a direct-current conversion unit including an integration unit that integrates an output signal of the self-vibration component extraction unit; and an offset addition unit that adds an offset value to an output signal of the direct-current conversion unit.
摘要:
A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film.This barrier layer can further inhibit a chemical reaction between the semiconductor layer and curable synthetic resin film, and can prevent an increase in dark current which flows through the semiconductor layer. Since no chemical reaction occurs between the barrier layer and semiconductor layer, the semiconductor layer will never be degraded. Further, with an auxiliary plate disposed on an upper surface of the curable synthetic resin film, it is possible to manufacture a radiation detector free from warpage and cracking due to temperature change.
摘要:
A plasma display panel has a front substrate, a rear substrate, and a phosphor layer. The front substrate has a dielectric layer formed so as to cover a plurality of display electrodes disposed on a substrate, and a protective layer formed on the dielectric layer. The rear substrate is faced to the front substrate so as to form discharge space, has data electrodes in the direction intersecting with the display electrodes, and has barrier ribs for partitioning the discharge space. The phosphor layer is formed by applying phosphor ink that is made of a phosphor material and dispersant between the barrier ribs of the rear substrate. Nano-particles with a diameter of a range of 1 nm to 100 nm inclusive, or a solvent having an affinity for the dispersant of the phosphor ink is applied to the surfaces of the barrier ribs, and then the phosphor ink is applied to them, thereby forming the phosphor layer.
摘要:
An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.
摘要:
The present invention provides a process for preparing a polycrystalline silicon having the surface layer in which the areas having a short carrier lifetime due to Fe has been substantially eliminated. A preparation method of polycrystalline silicon comprising preparing a mold evenly applied with a mold release agent produced by mixing a binder and a solvent with a silicon nitride powder and then solidifying a molten silicon in said mold, wherein x≦5.0, 20≦y≦100 and x×y≦100 are satisfied given that x represents a concentration of Fe (atomic ppm) contained as impurity in the silicon nitride powder and y represents a thickness of the mold release agent (μm) applied to the mold.
摘要:
The present invention has an object to provide an optical modulation device and an optical modulation method that achieve an excellent spectral efficiency with a simple and compact configuration and low power consumption. An optical modulation device according to an exemplary aspect of the present invention includes a CW light source (11), a coupler (12), optical modulators (14a) and (14b), an optical frequency shifter (15b), a serial-to-parallel converter (21), and a delay circuit (24a). The serial-to-parallel converter (21) divides a data signal having a bit rate B into two data strings having a bit rate B/2, and extracts a clock signal (CLK). The delay circuit (24a) temporally synchronizes the two data strings. CW light emitted from the CW light source is split into two beams by the coupler (12). The optical modulators (14a) and (14b) generate optical signals by modulating the two split light beams according to the data strings. The optical frequency shifter (15b) shifts center frequencies of the optical signals by Δf=B/(2×2) according to the clock signal (CLK).
摘要翻译:本发明的目的是提供一种光调制装置和光调制方法,其以简单紧凑的结构和低功耗实现了优异的光谱效率。 根据本发明的示例性方面的光调制装置包括CW光源(11),耦合器(12),光调制器(14a)和(14b),光移频器(15b),串 - 并联转换器(21)和延迟电路(24a)。 串行到并行转换器(21)将具有比特率B的数据信号分成具有比特率B / 2的两个数据串,并提取时钟信号(CLK)。 延迟电路(24a)在时间上同步两个数据串。 从CW光源发射的CW光被耦合器(12)分成两束。 光调制器(14a)和(14b)通过根据数据串调制两个分束光束来产生光信号。 光移位器(15b)根据时钟信号(CLK)将光信号的中心频率移位&Dgr; f = B /(2×2)。