公开(公告)号：US08189631B2

公开(公告)日：2012-05-29

申请号：US12664294

申请日：2008-05-22

申请人： Shinya Sudo ,  Kenji Sato ,  Koji Kudo ,  Kenji Mizutani ,  Jan De Merlier

发明人： Shinya Sudo ,  Kenji Sato ,  Koji Kudo ,  Kenji Mizutani ,  Jan De Merlier

IPC分类号： H01S3/13

CPC分类号： H01S5/141 ,  H01S5/02248 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039

摘要： The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.

摘要翻译： 本发明提供一种外部谐振器型波长可调激光器件，其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成，其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L（μm）为至少25μm且至多40μm，并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0（nm）等于半导体的内部损耗 增益介质大于-3·＆Dgr; R / 2 +（λc+ 35）且小于（ - （＆Ggr;·L）/ 7 + 8）·＆Dgr; R +（ - （＆Ggr;·L）+λc+ 45）。 这里，＆Dgr; R（dB）表示反射率差，λc（nm）表示波长可调激光器件的工作波长范围的中心处的波长。

公开(公告)号：US08144738B2

公开(公告)日：2012-03-27

申请号：US13165288

申请日：2011-06-21

申请人： Kenji Sato ,  Jan De Merli ,  Kenji Mizutani ,  Koji Kudo ,  Shinya Sudo ,  Mads L. Nielsen

发明人： Kenji Sato ,  Jan De Merli ,  Kenji Mizutani ,  Koji Kudo ,  Shinya Sudo ,  Mads L. Nielsen

IPC分类号： H01S3/10 ,  H01S3/08

CPC分类号： H01S5/141

摘要： In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).

摘要翻译： 在包括具有半导体光放大器（2）的外部空腔（20）并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中，具有至少一个单峰反射光谱的波长可调谐镜（7） 在激光波长调谐范围内的特征放置在外腔（20）的一端，由外腔（20）的有效长度确定的法布里珀罗模式间隔不小于1/10倍，不大于 10倍波长可调镜（7）的反射带全宽半最大值。

公开(公告)号：US20100246618A1

公开(公告)日：2010-09-30

申请号：US12664294

申请日：2008-05-22

申请人： Shinya Sudo ,  Kenji Sato ,  Koji Kudo ,  Kenji Mizutani ,  Jan De Merlier

发明人： Shinya Sudo ,  Kenji Sato ,  Koji Kudo ,  Kenji Mizutani ,  Jan De Merlier

IPC分类号： H01S3/13

CPC分类号： H01S5/141 ,  H01S5/02248 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039

摘要： The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.

摘要翻译： 本发明提供一种外部谐振器型波长可调激光器件，其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成，其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L（μm）为至少25μm且至多40μm，并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0（nm）等于半导体的内部损耗 增益介质大于-3·＆Dgr; R / 2 +（λc+ 35）且小于（ - （＆Ggr;·L）/ 7 + 8）·＆Dgr; R +（ - （＆Ggr;·L）+λc+ 45）。 这里，＆Dgr; R（dB）表示反射率差，he（nm）表示波长可调激光器件的工作波长范围的中心处的波长。

公开(公告)号：US20090274187A1

公开(公告)日：2009-11-05

申请号：US12086287

申请日：2007-01-10

申请人： Koji Kudo ,  Shinya Sudo ,  Kenji Sato ,  Kenji Mizutani

发明人： Koji Kudo ,  Shinya Sudo ,  Kenji Sato ,  Kenji Mizutani

IPC分类号： H01S5/028 ,  H01S5/026 ,  H01S5/24

CPC分类号： H01S5/026

摘要： A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.

摘要翻译： 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率，并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50％ 半导体光波导-B。

公开(公告)号：US20070104242A1

公开(公告)日：2007-05-10

申请号：US10580560

申请日：2004-11-12

申请人： Koji Kudo ,  Kenji Mizutani ,  Kenji Sato ,  Tomoaki Kato

发明人： Koji Kudo ,  Kenji Mizutani ,  Kenji Sato ,  Tomoaki Kato

IPC分类号： H01S3/08

CPC分类号： B82Y20/00 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/124 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/34306 ,  H01S5/4031 ,  H01S5/4087

摘要： A distributed-feedback semiconductor laser as a direct modulation light source with a modulation rate over 10 Gb/s having (1) a low threshold current characteristic, (2) a high single-mode characteristic, (3) a high resonant frequency (fr) characteristic, (4) a high temperature characteristic, and (5) adaptability to wide wavelength band and an extremely short active region. The distributed-feedback semiconductor laser 1 comprises an active region 30 for generating the gain of the laser beam and a diffraction grating 13 formed in the active region 30. Out of the two front and back end surfaces sandwiching the active region 30, the front end surface 1a has a reflectivity of 1 percent or less, and the back end surface 1b has a reflectivity of 30 percent or more when viewed from the back end surface 1b toward the front. The coupling coefficient κ of the diffraction grating 13 is 100 cm−1 or more, and the length L of the active region 30 is 150 μm or less. A combination of κ and L provided that Δα/gth is 1 or more is used where Δα is the gain difference between modes and gth=(internal loss αi+mirror loss αm) is the threshold gain.

摘要翻译： 作为具有（1）低阈值电流特性的调制速率超过10Gb / s的直接调制光源的分布反馈半导体激光器，（2）高单模特性，（3）高谐振频率（fr ）特性，（4）高温特性，（5）适用于宽波段和极短的有源区。 分布反馈半导体激光器1包括用于产生激光束的增益的有源区域30和形成在有源区域30中的衍射光栅13.在夹持有源区域30的两个前端和后端表面之外，前端 表面1a的反射率为1％以下，后端面1b从后端面1b向前方观察时的反射率为30％以上。 衍射光栅13的耦合系数kapp为100cm -1以上，有源区30的长度L为150μm以下。 使用kappa和L的组合，其中使用Deltaalpha / g第1个或更多个，其中Deltaalpha是模式之间的增益差异，并且第g个内部损失α _{i +镜像损失alpha ）是阈值增益。}

公开(公告)号：US08457168B2

公开(公告)日：2013-06-04

申请号：US12086287

申请日：2007-01-10

申请人： Koji Kudo ,  Shinya Sudo ,  Kenji Sato ,  Kenji Mizutani

发明人： Koji Kudo ,  Shinya Sudo ,  Kenji Sato ,  Kenji Mizutani

IPC分类号： H01S5/00

CPC分类号： H01S5/026

摘要： A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.

摘要翻译： 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率，并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50％ 半导体光波导-B。

公开(公告)号：US08284807B2

公开(公告)日：2012-10-09

申请号：US12865779

申请日：2008-12-09

申请人： Kenji Mizutani ,  Kenji Sato ,  Koji Kudo

发明人： Kenji Mizutani ,  Kenji Sato ,  Koji Kudo

IPC分类号： H01S3/10 ,  H01S3/13 ,  H01S3/00

CPC分类号： H01S5/141 ,  H01S5/0617 ,  H01S5/06255 ,  H01S5/06837 ,  H01S5/0687

摘要： An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.

摘要翻译： 本发明的目的是提供一种波长可调谐激光装置及其波长改变方法，该激光装置防止波长变化时的跳网。 根据本发明的波长可调激光装置101包括半导体光放大器102和周期性波长选择滤波器106.此外，波长可调激光装置101包括相位控制单元111，其同时控制施加到 半导体光放大器102和在开环控制下的波长可调激光器的相位调谐。 因此，可以实现暗调。

公开(公告)号：US07991024B2

公开(公告)日：2011-08-02

申请号：US11994085

申请日：2006-06-29

申请人： Kenji Sato ,  Jan De Merli ,  Kenji Mizutani ,  Koji Kudo ,  Shinya Sudo ,  Mads. L Nielsen

发明人： Kenji Sato ,  Jan De Merli ,  Kenji Mizutani ,  Koji Kudo ,  Shinya Sudo ,  Mads. L Nielsen

IPC分类号： H01S3/13 ,  H01S3/08

CPC分类号： H01S5/141

摘要： In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single-peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry-Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).

摘要翻译： 在包括具有半导体光放大器（2）的外部空腔（20）并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中，具有至少单峰反射的波长可调谐镜（7） 在激光波长调谐范围内的光谱特性被放置在外腔（20）的一端，并且由外腔（20）的有效长度确定的法布里 - 珀罗模式间隔不小于1/10倍 波长可调镜（7）的反射带全宽度的最大半数的10倍以上。

公开(公告)号：US20110002349A1

公开(公告)日：2011-01-06

申请号：US12865779

申请日：2008-12-09

申请人： Kenji Mizutani ,  Kenji Sato ,  Koji Kudo

发明人： Kenji Mizutani ,  Kenji Sato ,  Koji Kudo

IPC分类号： H01S5/06 ,  H01S5/14

CPC分类号： H01S5/141 ,  H01S5/0617 ,  H01S5/06255 ,  H01S5/06837 ,  H01S5/0687

摘要： An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.

摘要翻译： 本发明的目的是提供一种波长可调谐激光装置及其波长改变方法，该激光装置防止波长变化时的跳网。 根据本发明的波长可调激光装置101包括半导体光放大器102和周期性波长选择滤波器106.此外，波长可调激光装置101包括相位控制单元111，其同时控制施加到 半导体光放大器102和在开环控制下的波长可调激光器的相位调谐。 因此，可以实现暗调。

公开(公告)号：US20090122817A1

公开(公告)日：2009-05-14

申请号：US12064441

申请日：2006-09-04

申请人： Kenji Sato ,  Jan De Merli ,  Kenji Mizutani ,  Shinya Sudo ,  Koji Kudo ,  Hiroyuki Yamazaki

发明人： Kenji Sato ,  Jan De Merli ,  Kenji Mizutani ,  Shinya Sudo ,  Koji Kudo ,  Hiroyuki Yamazaki

IPC分类号： H01S3/10 ,  G02B6/10

CPC分类号： G02B6/12007 ,  G02F1/313 ,  G02F2203/15 ,  G02F2203/585 ,  H01S5/02248 ,  H01S5/0687 ,  H01S5/101 ,  H01S5/1032 ,  H01S5/142

摘要： Only the light at an overlapping wavelength of the transmission characteristics of at least two wavelength selecting filters is looped, and at least one of the wavelength selecting filters varies a selected wavelength. Since a loss due to the optical filters is small and there is not a loss caused by a highly reflecting film, the output of an external-resonator variable-wavelength laser can be increased. Optical circuit component (8) divides light input from external device (1) into at least two ports. Loop waveguide (11) interconnects at least ports (9, 10) divided by optical circuit component (8) in the form of a loop. At least two first wavelength selecting filters (12, 13) are inserted in series in a path of loop waveguide (11), and have periodic transmission characteristics on a frequency axis which are different from each other. At least one of first wavelength selecting filters (12, 13) varies the selected wavelength.

摘要翻译： 只有至少两个波长选择滤波器的传输特性的重叠波长的光被环绕，并且至少一个波长选择滤波器改变选定的波长。 由于由于滤光器引起的损耗小，并且不会由高反射膜引起的损耗，所以可以增加外部谐振器可变波长激光器的输出。 光电路部件（8）将从外部设备（1）输入的光分成至少两个端口。 环形波导（11）至少以循环形式的由光电路部件（8）划分的端口（9,10）互连。 至少两个第一波长选择滤波器（12,13）串联插入到环形波导（11）的路径中，并且在频率轴上具有彼此不同的周期性传输特性。 第一波长选择滤光器（12,13）中的至少一个改变所选择的波长。