Method and Means for Coupling High-Frequency Energy to and/or from the Nanoscale Junction of an Electrically-Conductive Tip with a Semiconductor
    21.
    发明申请
    Method and Means for Coupling High-Frequency Energy to and/or from the Nanoscale Junction of an Electrically-Conductive Tip with a Semiconductor 审中-公开
    将高频能量耦合到导电尖端的纳米结和/或从半导体的导电尖端的方法和装置

    公开(公告)号:US20150067931A1

    公开(公告)日:2015-03-05

    申请号:US14223727

    申请日:2014-03-24

    Inventor: Mark J. Hagmann

    Abstract: A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.

    Abstract translation: 用于将高频能量,特别是用于微波电路的高频能量耦合到纳米级结的方法包括将偏置T置于扫描探针显微镜的尖端和样品回路外部,并将分析的半导体的样品的一部分连接到 同轴电缆的外屏蔽层,以便以最少的样品参与来完成电路。 偏置T分支到高频和低频电路,两者均已完成,并且至少高频电路不依赖于器具或其他结构的接地来完成所述完成。

    Symmetric field emission devices using distributed capacitive ballasting with multiple emitters to obtain large emitted currents at high frequencies
    22.
    发明授权
    Symmetric field emission devices using distributed capacitive ballasting with multiple emitters to obtain large emitted currents at high frequencies 失效
    使用具有多个发射器的分布式电容镇流器的对称场致发射器件在高频下获得大的发射电流

    公开(公告)号:US08492966B2

    公开(公告)日:2013-07-23

    申请号:US12566972

    申请日:2009-09-25

    Inventor: Mark J. Hagmann

    CPC classification number: H01J1/304

    Abstract: Field emission devices utilizing capacitive ballasting are described with possible uses in industry. The preferred device utilizes opposing electrodes, each with a dielectric layer and a plurality of conductive islands which serve to exchange electrons, generating an oscillatory current. Ideally these islands are dome-shaped and made of a refractory metal such as tungsten of molybdenum. Through proper use and selection of materials, electrical fields with densities of 1014 A/m2 are capable of being generated.

    Abstract translation: 使用电容式镇流器的场致发射器件可以用于工业中的可能用途。 优选的器件利用相对的电极,每个电极具有用于交换电子的电介质层和多个导电岛,产生振荡电流。 理想情况下,这些岛是圆顶形的,由难熔金属如钼的钨制成。 通过正确使用和选择材料,可以产生密度为1014A / m2的电场。

    Optoelectronic devices in which a resonance between optical fields and
tunneling electrons is used to modulate the flow of said electrons
    23.
    发明授权
    Optoelectronic devices in which a resonance between optical fields and tunneling electrons is used to modulate the flow of said electrons 失效
    其中使用光场和隧穿电子之间的共振来调制所述电子的流动的光电器件

    公开(公告)号:US6153872A

    公开(公告)日:2000-11-28

    申请号:US122965

    申请日:1998-07-27

    CPC classification number: H01J1/304 H01J1/34 H01J3/021 H01J2201/317

    Abstract: An apparatus for high speed gating of electric current based on the resonant interaction of tunneling electrons with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.

    Abstract translation: 公开了一种基于隧道电子与光场的谐振相互作用的电流高速选通装置。 本发明利用直流电压源偏置电子发射尖端,并且将来自激光器的输出聚焦在电子发射尖端上以刺激来自尖端的电子发射。 电子发射产生电信号,该电信号被耦合到用于进一步处理的电路。 根据本发明,公开了耦合来自电子发射尖端的电信号的各种方法,减少刺激电子发射所需的激光输出的幅度的各种方法以及提高静态电流密度的方法也是如此。

    FREQUENCY COMB FEEDBACK CONTROL FOR SCANNING PROBE MICROSCOPY

    公开(公告)号:US20210302466A1

    公开(公告)日:2021-09-30

    申请号:US17251650

    申请日:2019-07-23

    Inventor: Mark J. Hagmann

    Abstract: In order to meet the needs of, in particular, the semi-conductor industry as it requires finer lithography nodes, a method of feedback control for scanning probe microscopy generates a microwave frequency comb of harmonics in a tunneling junction (10) between a probe tip electrode (80) and sample electrode (20) by irradiating the junction with mode-locked pulses of electromagnetic radiation from a laser (90). Utilizing power measurements within one or more harmonics within the microwave frequency comb, the tip-sample distance in the tunneling junction may be regulated by a feedback control (40) utilizing an extremum-seeking algorithm for maximum efficiency and avoid tip crash when used with resistive samples. Ideally, no externally provided DC bias is required to use the method. Utilization of this method contributes to true sub-nanometer resolution of images of carrier distribution in resistive samples such as semi-conductors.

    Frequency Comb Feedback Control for Scanning Probe Microscopy

    公开(公告)号:US20180364278A1

    公开(公告)日:2018-12-20

    申请号:US16116479

    申请日:2018-08-29

    Inventor: Mark J. Hagmann

    CPC classification number: G01Q60/16 G01Q30/20 G01Q60/12 G01Q60/14

    Abstract: In order to meet the needs of the semi-conductor industry as it requires finer lithography nodes, a method of feedback control for scanning probe microscopy generates a microwave frequency comb of harmonics in a tunneling junction by irradiating the junction with mode-locked pulses of electromagnetic radiation. Utilizing power measurements within one or more harmonics, the tip-sample distance in the tunneling junction may be regulated for maximum efficiency and avoid tip crash when used with resistive samples. Optionally, no DC bias is required to use the method. Utilization of this method contributes to true sub-nanometer resolution of images of carrier distribution in resistive samples such as semi-conductors.

    Electrode control methodology for a scanning tunneling microscope

    公开(公告)号:US09885736B2

    公开(公告)日:2018-02-06

    申请号:US15174939

    申请日:2016-06-06

    Inventor: Mark J. Hagmann

    CPC classification number: G01Q60/10 G01Q10/00 G01Q10/065

    Abstract: A control methodology for scanning tunneling microscopy is disclosed. Instead of utilizing Integral-based control systems, the methodology utilizes a dual-control algorithm to direct relative advancement of a STM tip towards a sample. A piezo actuator and stepper motor advances an STM tip towards a sample at a given distance until measuring a current greater than or equal to a desired setpoint current. Readings of the contemporaneous step are analyzed to direct the system to change continue or change direction and also determine the size of each step. In simulations where Proportion and/or Integral control methodology was added to the algorithm the stability of the feedback control is decreased. The present methodology accounts for temperature variances in the environment and also appears to clean and protect the tip electrode, prolonging its useful life.

    Scanning Frequency Comb Microscopy (SFCM) For Carrier Profiling in Semiconductors
    27.
    发明申请
    Scanning Frequency Comb Microscopy (SFCM) For Carrier Profiling in Semiconductors 审中-公开
    扫描频率梳显微镜(SFCM)用于半导体中的载波分布

    公开(公告)号:US20150247809A1

    公开(公告)日:2015-09-03

    申请号:US14635828

    申请日:2015-03-02

    Inventor: Mark J. Hagmann

    CPC classification number: G01N22/00 G01Q60/14

    Abstract: A microwave frequency comb (MFC) is produced when a mode-locked ultrafast laser is focused on the tunneling junction of a scanning tunneling microscope (STM). The MFC consists of hundreds of measureable harmonics at integer multiples of the pulse repetition frequency of the laser, which are superimposed on the DC tunneling current. In Scanning Frequency Comb Microscopy (SFCM) the tip and/or sample electrode of the STM is moved vertically and laterally so that the power in the MFC may be measured at one or more locations on the surface of the sample and, from the power, carrier density, and other characteristics, of the sample may be calculated. SFCM is non-destructive of the sample. While many systems are possible to practice SFCM, a preferred apparatus is disclosed.

    Abstract translation: 当模式锁定超快激光聚焦在扫描隧道显微镜(STM)的隧道结上时,产生微波频率梳(MFC)。 MFC由激光脉冲重复频率的整数倍的数百个可测谐波组成,它们叠加在直流隧道电流上。 在扫描频率梳显微镜(SFCM)中,STM的尖端和/或样品电极垂直和横向移动,使得可以在样品表面上的一个或多个位置处测量MFC中的功率,并且从功率, 可以计算样品的载流子密度和其他特性。 SFCM对样品非破坏性。 虽然许多系统可以实施SFCM,但是公开了一种优选的装置。

    Method and means for coupling high-frequency energy to and/or from the nanoscale junction of an electrically-conductive tip with a semiconductor
    28.
    发明授权
    Method and means for coupling high-frequency energy to and/or from the nanoscale junction of an electrically-conductive tip with a semiconductor 有权
    将高频能量耦合到和/或从导电尖端与半导体的纳米级结结合的方法和装置

    公开(公告)号:US09075081B2

    公开(公告)日:2015-07-07

    申请号:US14223727

    申请日:2014-03-24

    Inventor: Mark J. Hagmann

    Abstract: A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.

    Abstract translation: 用于将高频能量,特别是用于微波电路的高频能量耦合到纳米级结的方法包括将偏置T置于扫描探针显微镜的尖端和样品回路外部,并将分析的半导体的样品的一部分连接到 同轴电缆的外屏蔽层,以便以最少的样品参与来完成电路。 偏置T分支到高频和低频电路,两者均已完成,并且至少高频电路不依赖于器具或其他结构的接地来完成所述完成。

    High frequency ammeter
    29.
    发明授权
    High frequency ammeter 失效
    高频电流表

    公开(公告)号:US4897600A

    公开(公告)日:1990-01-30

    申请号:US122201

    申请日:1987-11-13

    CPC classification number: G01R15/181 A61B5/05

    Abstract: A current detector for detecting the high frequency current flowing in a conductor includes a coil of high resistivity material wound around an non-ferromagnetic core. The coil is arranged in a substantially closed loop configuration around the conductor carrying the current to be measured. The ratio of the winding spacing to the cross sectional area of the coil is maintained constant over the length of the winding. A shield of high resistivity material surrounds the coil and is spaced from the coils and the shield has a gap oriented along an azimuth of the closed loop winding and directed orthogonal to the net current direction of the current induced in the coil. The ends of the coil are coupled to a high impedance voltage detector through high resistivity leads and a relatively low value resistor is coupled between the leads to reduce the quality factor. The current detector may be used to detect current flowing in a human body due to the absorption of high frequency incident radiation as an indication of the specific absorption rate of such radiation.

    Abstract translation: 用于检测在导体中流动的高频电流的电流检测器包括缠绕在非铁磁芯上的高电阻率材料的线圈。 线圈以围绕导体承载待测量电流的基本上闭合的环形结构布置。 绕组间距与线圈横截面积的比值在绕组长度上保持恒定。 高电阻率材料的屏蔽层围绕线圈并且与线圈间隔开,并且屏蔽件具有沿闭环绕组的方位定向的间隙,并且与线圈中感应的电流的净电流方向正交。 线圈的端部通过高电阻率引线耦合到高阻抗电压检测器,并且在引线之间耦合相对低值的电阻器以降低品质因数。 电流检测器可用于检测由于吸收高频入射辐射而在人体中流动的电流,作为这种辐射的比吸收率的指示。

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