公开(公告)号：US4725830A

公开(公告)日：1988-02-16

申请号：US892284

申请日：1986-08-04

申请人： Rie Kawai ,  Shinichi Tomita ,  Kanzen Gotou ,  Susuma Ohba ,  Makoto Shinohara

发明人： Rie Kawai ,  Shinichi Tomita ,  Kanzen Gotou ,  Susuma Ohba ,  Makoto Shinohara

IPC分类号： G06F3/048 ,  G06F3/033 ,  G06F3/153 ,  G06F17/24 ,  G09G5/14 ,  G09G1/16

CPC分类号： G09G5/14 ,  G06F17/243 ,  G06F3/0481

摘要： A data input system of a multi-window mode in which a plurality of logic pictures can be displayed on a physical image screen of a CRT display. An input data once stored in a specified area of a memory is displayed in a selected one of the logical pictures. The system includes at least one logic picture designating device equipped with an indicator lamp, and transfer keys for designating one of the display fields in the logic picture. In accordance with combinations of designation and non-designation of the logic pictures, a data input path of the stored input data to the logic picture in which cursor is present or the logic picture in which cursor is absent is exchangeably selected, whereby the data stored in the specified memory area is transferred for display to the field designated by the transfer key in the selected picture through the input path as established.

摘要翻译： 一种多窗口模式的数据输入系统，其中可以在CRT显示器的物理图像屏幕上显示多个逻辑图像。 一旦存储在存储器的指定区域中的输入数据被显示在所选择的一个逻辑图像中。 该系统包括配备有指示灯的至少一个逻辑图像指定装置和用于指定逻辑图像中的一个显示区域的转移键。 根据逻辑图像的指定和非指定的组合，存储的输入数据到存在光标的逻辑图像的数据输入路径或光标不存在的逻辑图像被可交换地选择，从而存储数据 在指定的存储区域中，通过建立的输入路径将所显示的图像转移到由所选图像中的传送键指定的字段。

公开(公告)号：US07902039B2

公开(公告)日：2011-03-08

申请号：US11946643

申请日：2007-11-28

申请人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

发明人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

IPC分类号： H01L21/00

CPC分类号： H01L21/304 ,  H01L21/02024 ,  H01L21/2007 ,  H01L21/76256

摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.

摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。

公开(公告)号：US07528049B2

公开(公告)日：2009-05-05

申请号：US11878255

申请日：2007-07-23

申请人： Yasunobu Ikeda ,  Shinichi Tomita ,  Hiroyuki Miyahara

发明人： Yasunobu Ikeda ,  Shinichi Tomita ,  Hiroyuki Miyahara

IPC分类号： H01L21/00

CPC分类号： H01L21/02052 ,  H01L21/3226 ,  H01L21/76256

摘要： A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped at an interface between the active layer wafer and the supporting wafer to form crystal defects at an interface between the active layer wafer and an oxide film and/or at an interface between the supporting wafer and the oxide film. This allows a simple and inexpensive gettering source to be formed at the interface between an SOI layer and an insulating layer (oxide film). Also, the bonded SOI wafer of the present invention that is manufactured by this method can effectively remove heavy-metal impurities that may have a negative impact on the characteristics of the device and/or the withstand voltage characteristics of the oxide film. Therefore, the manufacturing method and the bonded SOI wafer according to the present invention can be utilized widely as an SOI wafer with improved device characteristics or as a manufacturing method thereof.

摘要翻译： 通过在有源层晶片的表面和/或支撑晶片的表面上存在有机物的状态下进行结合，并且在有机物被捕获的状态下进行接合强化的热处理来制造键合SOI晶片 有源层晶片和支撑晶片之间的界面，以在有源层晶片和氧化物膜之间的界面处和/或在支撑晶片和氧化物膜之间的界面处形成晶体缺陷。 这允许在SOI层和绝缘层（氧化物膜）之间的界面处形成简单且廉价的吸气源。 此外，通过该方法制造的本发明的接合SOI晶片可以有效地去除可能对器件的特性和/或氧化膜的耐电压特性具有负面影响的重金属杂质。 因此，根据本发明的制造方法和接合SOI晶片可以广泛地用作具有改进的器件特性的SOI晶片或其制造方法。

公开(公告)号：US20080020541A1

公开(公告)日：2008-01-24

申请号：US11878255

申请日：2007-07-23

申请人： Yasunobu Ikeda ,  Shinichi Tomita ,  Hiroyuki Miyahara

发明人： Yasunobu Ikeda ,  Shinichi Tomita ,  Hiroyuki Miyahara

IPC分类号： H01L21/762 ,  H01L29/00

CPC分类号： H01L21/02052 ,  H01L21/3226 ,  H01L21/76256

摘要： A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped at an interface between the active layer wafer and the supporting wafer to form crystal defects at an interface between the active layer wafer and an oxide film and/or at an interface between the supporting wafer and the oxide film. This allows a simple and inexpensive gettering source to be formed at the interface between an SOI layer and an insulating layer (oxide film). Also, the bonded SOI wafer of the present invention that is manufactured by this method can effectively remove heavy-metal impurities that may have a negative impact on the characteristics of the device and/or the withstand voltage characteristics of the oxide film. Therefore, the manufacturing method and the bonded SOI wafer according to the present invention can be utilized widely as an SOI wafer with improved device characteristics or as a manufacturing method thereof.

摘要翻译： 通过在有源层晶片的表面和/或支撑晶片的表面上存在有机物的状态下进行结合，并且在有机物被捕获的状态下进行接合强化的热处理来制造键合SOI晶片 有源层晶片和支撑晶片之间的界面，以在有源层晶片和氧化物膜之间的界面处和/或在支撑晶片和氧化物膜之间的界面处形成晶体缺陷。 这允许在SOI层和绝缘层（氧化物膜）之间的界面处形成简单且廉价的吸气源。 此外，通过该方法制造的本发明的接合SOI晶片可以有效地去除可能对器件的特性和/或氧化膜的耐电压特性具有负面影响的重金属杂质。 因此，根据本发明的制造方法和接合SOI晶片可以广泛地用作具有改进的器件特性的SOI晶片或其制造方法。

公开(公告)号：US20060055003A1

公开(公告)日：2006-03-16

申请号：US11131332

申请日：2005-05-18

申请人： Shinichi Tomita ,  Masahide Tsutsumi

发明人： Shinichi Tomita ,  Masahide Tsutsumi

IPC分类号： H01L23/58

CPC分类号： H01L24/83 ,  H01L21/26513 ,  H01L21/3221 ,  H01L21/3226 ,  H01L21/76256 ,  H01L21/84 ,  H01L24/26 ,  H01L2224/16 ,  H01L2224/83099 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/07802

摘要： This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.

摘要翻译： 该键合SOI衬底包括：具有其中以低密度存在掺杂剂的低密度杂质层和高密度存在掺杂剂的高密度杂质层的SOI层; 用于支撑所述SOI层的支撑衬底的晶片; 以及掩埋绝缘膜，其中所述SOI层和用于支撑衬底的所述晶片与其间的所述掩埋绝缘膜接合，并且在所述高密度杂质层中形成吸杂位点。

公开(公告)号：US06620285B2

公开(公告)日：2003-09-16

申请号：US09972851

申请日：2001-10-10

申请人： Shinichi Tomita ,  Shuhei Tsuda ,  Yasunobu Ikeda

发明人： Shinichi Tomita ,  Shuhei Tsuda ,  Yasunobu Ikeda

IPC分类号： B29C6500

CPC分类号： B32B38/1833 ,  B32B2038/1891 ,  H01L21/76251 ,  Y10T156/1702 ,  Y10T156/1744

摘要： A method for bonding substrates to tightly bond two overlaid substrates comprises the steps of: aligning the substrates, freely falling a second substrate onto a first substrate to overlay the first and second substrates; interposing an air layer between the joining surfaces of the first and second substrates, aligning the first and second substrates and holding the aligned first and second substrates; and pressing one point of the aligned two substrates. Thus, the bonded substrates which can be aligned accurately and free from occurrence of voids or the like can be obtained.

公开(公告)号：US20090325385A1

公开(公告)日：2009-12-31

申请号：US12584269

申请日：2009-09-01

申请人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

发明人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

IPC分类号： H01L21/304

CPC分类号： H01L21/304 ,  H01L21/02024 ,  H01L21/2007 ,  H01L21/76256

摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.

摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得了具有高平坦度的SOI晶片或外延硅晶片。

公开(公告)号：US07442992B2

公开(公告)日：2008-10-28

申请号：US11131332

申请日：2005-05-18

申请人： Shinichi Tomita ,  Masahide Tsutsumi

发明人： Shinichi Tomita ,  Masahide Tsutsumi

IPC分类号： H01L29/72

CPC分类号： H01L24/83 ,  H01L21/26513 ,  H01L21/3221 ,  H01L21/3226 ,  H01L21/76256 ,  H01L21/84 ,  H01L24/26 ,  H01L2224/16 ,  H01L2224/83099 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/07802

摘要： This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.

摘要翻译： 该键合SOI衬底包括：具有其中以低密度存在掺杂剂的低密度杂质层和高密度存在掺杂剂的高密度杂质层的SOI层; 用于支撑所述SOI层的支撑衬底的晶片; 以及掩埋绝缘膜，其中所述SOI层和用于支撑衬底的所述晶片与其间的所述掩埋绝缘膜接合，并且在所述高密度杂质层中形成吸杂位点。

公开(公告)号：US07208058B2

公开(公告)日：2007-04-24

申请号：US10862439

申请日：2004-06-08

申请人： Shinichi Tomita

发明人： Shinichi Tomita

IPC分类号： B32B41/00

CPC分类号： H01L21/76251 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10T156/1089 ,  Y10T156/1092 ,  H01L2924/00

摘要： An active layer wafer having a larger diameter is placed over a stationary supporting substrate wafer having a smaller diameter. A pusher plate is pressed against an orientation flat of the larger wafer to move the wafer substantially in the horizontal direction. In the course of the pressing operation, the pusher plate is also pressed against the orientation flat of the smaller wafer so as to move the two wafers together. Then, as a result of each of the cut sections for alignment of the wafer being pressed against an aligning plate, the larger wafer and the smaller wafer can be bonded to each other with their centerlines and orientation flats aligned with respect to each other.

摘要翻译： 具有较大直径的有源层晶片放置在具有较小直径的固定支撑衬底晶片上。 推板被压靠在较大晶片的定向平面上，以使晶片基本上沿水平方向移动。 在按压操作的过程中，推板被压靠在较小晶片的定向平面上，以将两个晶片移动到一起。 然后，作为将晶片对准对准板的每个切割部分的结果，较大的晶片和较小的晶片可以以它们的中心线和取向平面彼此对准的方式彼此接合。