公开(公告)号：US20210202246A1

公开(公告)日：2021-07-01

申请号：US16729903

申请日：2019-12-30

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jerome A. Imonigie ,  Kent H. Zhuang ,  Josiah Jebaraj Johnley Muthuraj ,  Janos Fucsko ,  Benjamin E. Greenwood ,  Farrell M. Good

IPC: H01L21/02 ,  H01L21/762

Abstract: Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.

公开(公告)号：US20210202243A1

公开(公告)日：2021-07-01

申请号：US15930875

申请日：2020-05-13

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.