公开(公告)号：US12040182B2

公开(公告)日：2024-07-16

申请号：US17971376

申请日：2022-10-21

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105 ,  H10B63/00

CPC classification number: H01L21/02282 ,  H01L21/02129 ,  H01L21/0234 ,  H01L21/31053 ,  H10B63/84

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

公开(公告)号：US20230044518A1

公开(公告)日：2023-02-09

申请号：US17971376

申请日：2022-10-21

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

公开(公告)号：US11508573B2

公开(公告)日：2022-11-22

申请号：US15930875

申请日：2020-05-13

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105 ,  H01L27/24

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

公开(公告)号：US20210202243A1

公开(公告)日：2021-07-01

申请号：US15930875

申请日：2020-05-13

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

IPC: H01L21/02 ,  H01L21/3105

Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.