公开(公告)号：USD637582S1

公开(公告)日：2011-05-10

申请号：US29347813

申请日：2010-06-11

申请人： Takayuki Wada

设计人： Takayuki Wada

公开(公告)号：USD635551S1

公开(公告)日：2011-04-05

申请号：US29347568

申请日：2010-03-05

申请人： Takayuki Wada

设计人： Takayuki Wada

公开(公告)号：USD589510S1

公开(公告)日：2009-03-31

申请号：US29300046

申请日：2008-02-14

申请人： Takayuki Wada

设计人： Takayuki Wada

公开(公告)号：US20080231538A1

公开(公告)日：2008-09-25

申请号：US12034128

申请日：2008-02-20

申请人： Takeshi INOUE ,  Takashi Hara ,  Ayumu Nomura ,  Daisuke Shiono ,  Takayuki Wada

发明人： Takeshi INOUE ,  Takashi Hara ,  Ayumu Nomura ,  Daisuke Shiono ,  Takayuki Wada

IPC分类号： H01Q1/42

CPC分类号： H01Q1/08 ,  H01Q1/24 ,  H01Q1/3233

摘要： Disclosed herein is an electronic equipment unit having a cradle, electronic equipment detachably mounted to the cradle, and a connecting mechanism for detachably connecting the electronic equipment to the cradle. The electronic equipment has a housing, an antenna case connected to the back side of the housing, and a recess formed on the back side of the housing for receiving the antenna case. The antenna case is pivotable between a retracted condition where the antenna case is retracted in the recess and a raised condition where the antenna case is raised from the back side of the housing. The cradle has a connecting portion adapted to be received in the recess in the raised condition of the antenna case. The connecting portion is detachably connected to the recess by the connecting mechanism in the condition where the antenna case is raised and the connecting portion is received in the recess.

摘要翻译： 这里公开了一种电子设备单元，其具有支架，可拆卸地安装到支架上的电子设备，以及用于将电子设备可拆卸地连接到支架的连接机构。 电子设备具有壳体，连接到壳体的后侧的天线壳体和形成在壳体的背侧上的用于接收天线壳体的凹部。 天线壳体可在天线壳体缩回到凹部中的缩回状态和天线壳体从壳体的后侧升高的升高状态之间枢转。 托架具有适于在天线壳体的升高状态下容纳在凹部中的连接部分。 在天线壳体升高并且连接部分被容纳在凹部中的状态下，连接部分通过连接机构可拆卸地连接到凹部。

公开(公告)号：USD564374S1

公开(公告)日：2008-03-18

申请号：US29274845

申请日：2007-05-31

申请人： Takayuki Wada

设计人： Takayuki Wada

公开(公告)号：US07109128B2

公开(公告)日：2006-09-19

申请号：US10866763

申请日：2004-06-15

申请人： Koichi Sugiyama ,  Yoshihiro Takao ,  Shinji Sugatani ,  Daisuke Matsunaga ,  Takayuki Wada ,  Tohru Fujita ,  Hikaru Kokura

发明人： Koichi Sugiyama ,  Yoshihiro Takao ,  Shinji Sugatani ,  Daisuke Matsunaga ,  Takayuki Wada ,  Tohru Fujita ,  Hikaru Kokura

IPC分类号： H01L21/302

CPC分类号： H01L29/665 ,  H01L21/26586 ,  H01L21/76897 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/1083 ,  H01L29/6656 ,  Y10S257/90

摘要： There are provided a gate electrode formed on a semiconductor substrate of one conductivity type via a gate insulating film, ion-implantation controlling films formed on both side surfaces of the gate electrode and having a space between the gate electrode and an upper surface of the semiconductor substrate, first and second impurity diffusion regions of opposite conductivity type formed in the semiconductor substrate on both sides of the gate electrode and serving as source/drain, a channel region of one conductivity type formed below the gate electrode between the first and second impurity diffusion regions of opposite conductivity type, and pocket regions of one conductivity type connected to end portions of the impurity diffusion regions of opposite conductivity type in the semiconductor substrate below the gate electrode and having an impurity concentration of one conductivity type higher than the channel region.

公开(公告)号：US06709959B2

公开(公告)日：2004-03-23

申请号：US09472829

申请日：1999-12-28

申请人： Masataka Kase ,  Toshiki Miyake ,  Mitsuaki Hori ,  Kenichi Hikazutani ,  Manabu Nakamura ,  Takayuki Wada ,  Yoshikazu Kataoka

发明人： Masataka Kase ,  Toshiki Miyake ,  Mitsuaki Hori ,  Kenichi Hikazutani ,  Manabu Nakamura ,  Takayuki Wada ,  Yoshikazu Kataoka

IPC分类号： H01L21265

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823878

摘要： A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.

摘要翻译： 通过离子注入工艺将杂质元素引入Si衬底中，通过使得由Si衬底中由杂质元素形成的结的深度小于约50nm的能量集合来制造半导体器件，然后将 衬底，其中所述方法还包括在离子注入工艺步骤之前从Si衬底的表面除去氧化物膜的步骤。