公开(公告)号：US20220416764A1

公开(公告)日：2022-12-29

申请号：US17903296

申请日：2022-09-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo NAKAGAWA ,  Haruki KYOUYA ,  Hiroshi SHIMIZU

IPC: H03H9/56 ,  H03H9/70 ,  H03H9/02 ,  H03H9/13

Abstract: An acoustic wave device includes an IDT electrode laminated on a piezoelectric substrate and defining a first resonator, and an IDT electrode laminated on the piezoelectric substrate and defining a second resonator. The first and second resonators are connected in parallel or in series. The IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film.

公开(公告)号：US20220368314A1

公开(公告)日：2022-11-17

申请号：US17868815

申请日：2022-07-20

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasumasa TANIGUCHI ,  Ryo NAKAGAWA ,  Koji NOSAKA

IPC: H03H9/72 ,  H03H9/25 ,  H03H9/64 ,  H03H9/145

Abstract: When a current flowing in a series circuit including an equivalent resistance, an equivalent inductor, and an equivalent capacitance in an electric equivalent circuit of a specific resonator in each filter is defined as an acoustic path current, under conditions that a phase of an acoustic path current of a first transmission filter at a side of a common terminal at a frequency within a first pass band is represented as θ1Tx1, a phase of an acoustic path current of the first transmission filter at the side of the common terminal at a frequency within a second pass band is represented as θ2Tx1, a phase of an acoustic path current of a second transmission filter at the side of the common terminal at a frequency within the first pass band is represented as θ1Tx2, and a phase of an acoustic path current of the second transmission filter at the side of the common terminal at a frequency within the second pass band is represented as θ2Tx2, a multiplexer satisfies a first condition: |(2·θ1Tx1−θ2Tx1)−(2·θ1Tx2−θ2Tx2)|=180°±90°, or a second condition: |(2·θ2Tx1−θ1Tx1)−(2·θ2Tx2−θ1Tx2)|=180°±90°.

公开(公告)号：US20210184654A1

公开(公告)日：2021-06-17

申请号：US17183429

申请日：2021-02-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo NAKAGAWA ,  Hideki IWAMOTO

IPC: H03H9/64 ,  H03H9/145 ,  H03H9/25 ,  H03H9/72 ,  H03H9/02

Abstract: An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (φLT=0°±5°, θLT, ψLT=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency fh1_t(n) satisfies Formula (3) or Formula (4) for all m where m>n: fh1_t(n)>fu(m)  Formula (3); and fh1_t(n)

公开(公告)号：US20200328823A1

公开(公告)日：2020-10-15

申请号：US16914522

申请日：2020-06-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo NAKAGAWA ,  Hideki IWAMOTO ,  Tsutomu TAKAI

IPC: H04B11/00 ,  H01L41/047 ,  H03H9/02 ,  H03H9/64

Abstract: In an acoustic wave device, an antenna end resonator that is electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is about 3.5λ or less when a wavelength of an acoustic wave is denoted as λ. The first acoustic wave resonator and the second acoustic wave resonator satisfy at least one of a first condition, a second condition, and a third condition. The first condition is a condition that the first acoustic wave resonator further includes a dielectric film provided between the piezoelectric layer and an interdigital transducer electrode, and the second acoustic wave resonator does not include the dielectric film.

公开(公告)号：US20200177157A1

公开(公告)日：2020-06-04

申请号：US16783202

申请日：2020-02-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo NAKAGAWA ,  Shou NAGATOMO ,  Hideki IWAMOTO ,  Tsutomu TAKAI

IPC: H03H9/25 ,  H03H9/02 ,  H03H9/72 ,  H03H9/64 ,  H03H9/145

Abstract: A multiplexer includes N acoustic wave filters each including one end connected in common and having a different pass band, in which when the N acoustic wave filters are in order from a side of a lower frequency of the pass band, at least one n-th acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having the highest frequency of the pass band includes one or more acoustic wave resonators including a support substrate, a silicon nitride film laminated on the support substrate, a silicon oxide film laminated on the silicon nitride film, a piezoelectric body laminated on the silicon oxide film, and an IDT electrode provided on the piezoelectric body. All acoustic wave filters having a pass band in a higher frequency than a frequency of a pass band of the n-th acoustic wave filter satisfy fhl_t(n)>fu(m) or fhl_t(n)

公开(公告)号：US20200052675A1

公开(公告)日：2020-02-13

申请号：US16658211

申请日：2019-10-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tomio KANAZAWA ,  Hiroshi SHIMIZU ,  Syunsuke KIDO ,  Ryo NAKAGAWA

IPC: H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

Abstract: An acoustic wave device includes an interdigital transducer electrode provided on a piezoelectric substrate, the interdigital transducer electrode includes first and second electrode fingers. The second electrode fingers are connected to an electric potential different from that of the first electrode fingers. A direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction, the interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas each provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction.

公开(公告)号：US20170338795A1

公开(公告)日：2017-11-23

申请号：US15465632

申请日：2017-03-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo NAKAGAWA ,  Chihiro KONOMA ,  Masashi TSUBOKAWA

IPC: H03H9/02 ,  B06B1/06 ,  H01L41/047 ,  H03H9/56

CPC classification number: H03H9/02559 ,  B06B1/0644 ,  B06B1/0662 ,  H01L41/0477 ,  H03H9/131 ,  H03H9/56

Abstract: An elastic wave device includes a substrate including a piezoelectric material layer and an IDT electrode on the piezoelectric material layer. The IDT electrode includes a Pt film, a Ti film on the Pt film, and an Al-based metal film on the Ti film. The Ti film is quasi-single-crystalline.

公开(公告)号：US20160156334A1

公开(公告)日：2016-06-02

申请号：US15014172

申请日：2016-02-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryo NAKAGAWA

IPC: H03H9/25 ,  H03H9/76 ,  H03H9/64

CPC classification number: H03H9/725 ,  H03H9/02992 ,  H03H9/14591 ,  H03H9/25 ,  H03H9/64 ,  H03H9/6469 ,  H03H9/6476 ,  H03H9/6483 ,  H03H9/76

Abstract: In an elastic wave resonator, a first IDT electrode, a second IDT electrode, a first reflector, and a second reflector are located on a piezoelectric substrate. The first IDT electrode and the second IDT electrode share a shared bus bar. Between a first terminal and a second terminal, the first IDT electrode and the second IDT electrode are connected in parallel. The shared bus bar and the first reflector are connected to the first terminal. A first bus bar and a second bus bar are connected to the second reflector, and are further connected to the second terminal.

Abstract translation: 在弹性波谐振器中，第一IDT电极，第二IDT电极，第一反射器和第二反射器位于压电基板上。 第一IDT电极和第二IDT电极共享共享母线。 在第一端子和第二端子之间，第一IDT电极和第二IDT电极并联连接。 共享母线和第一反射器连接到第一端子。 第一母线和第二母线连接到第二反射器，并且还连接到第二端子。