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1.发明申请公开(公告)号：US20200007109A1
公开(公告)日：2020-01-02
申请号：US16561244
申请日：2019-09-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Hideki IWAMOTO , Tsutomu TAKAI
Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about −2.4, and TSi>20.
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公开(公告)号：US20180102761A1
公开(公告)日：2018-04-12
申请号：US15834206
申请日：2017-12-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tsutomu TAKAI , Atsushi TANAKA , Seiji KAI
IPC: H03H9/25 , H03H9/02 , H03H9/145 , H03H9/05 , H01L41/047
CPC classification number: H03H9/25 , H01L41/0477 , H03H9/02559 , H03H9/02574 , H03H9/0595 , H03H9/14544 , H03H9/6483
Abstract: An elastic wave device includes a piezoelectric thin film provided on a low acoustic velocity film and an IDT electrode provided on the piezoelectric thin film, wherein the piezoelectric thin film is made of a piezoelectric single crystal and includes a first principal surface that is a positive surface in a polarization axis direction and a second principal surface that is a negative surface in the polarization axis direction. The first principal surface of the piezoelectric thin film faces the low acoustic velocity film, and the second principal surface faces the IDT electrode.
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公开(公告)号：US20220216850A1
公开(公告)日：2022-07-07
申请号：US17701971
申请日：2022-03-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yasumasa TANIGUCHI , Katsuya DAIMON , Tsutomu TAKAI
Abstract: An acoustic wave device includes a piezoelectric substrate, a first interdigital transducer (IDT) electrode, reflectors on both sides of the first IDT electrode in a propagation direction of an acoustic wave, and a second IDT electrode facing the first IDT electrode with a reflector interposed therebetween. The first and second IDT electrodes include first and second intersecting areas in which electrode fingers overlap in the propagation direction. The first and second intersecting areas overlap in the propagation direction. A third busbar of the second IDT electrode is coupled to a first busbar of the first IDT electrode. A fourth busbar of the second IDT electrode is coupled to a ground potential. A resonant frequency of the second IDT electrode is in a frequency band of an interference wave signal.
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4.发明申请公开(公告)号：US20200336133A1
公开(公告)日：2020-10-22
申请号：US16920811
申请日：2020-07-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Hideki IWAMOTO , Tsutomu TAKAI , Yuichi TAKAMINE
Abstract: In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5λ. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of θB±4°. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from θB (°) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.
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公开(公告)号：US20190393855A1
公开(公告)日：2019-12-26
申请号：US16561198
申请日：2019-09-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Hideki IWAMOTO , Tsutomu TAKAI
Abstract: In a multiplexer, at least one acoustic wave filter includes a piezoelectric body made of lithium tantalate having Euler angles (φLT=0°±5°, θLT, ψLT=0°±15°), a support substrate, and an interdigital transducer (IDT) electrode. A frequency fh1_t(n) of a first higher-order mode satisfies below Formulas (3) and (4) in all acoustic wave filters (m) having a higher pass band than at least one acoustic wave filter (n) (n fu(m) Formula (3). fh1_t(n)
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Patent Agency Ranking
公开(公告)号：US20190260349A1
公开(公告)日：2019-08-22
申请号：US16242048
申请日：2019-01-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tsutomu TAKAI , Koji YAMAMOTO , Hideki IWAMOTO
IPC: H03H9/02 , H03H9/25 , H03H9/54 , H03H9/05 , H01L41/047 , H01L41/053 , H01L41/18
Abstract: An elastic wave device includes a SiNx layer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiNx layer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiNx layer, x is about 1.34 or more and about 1.66 or less.
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公开(公告)号：US20170222619A1
公开(公告)日：2017-08-03
申请号：US15488567
申请日：2017-04-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki IWAMOTO , Keiji OKADA , Yuichi TAKAMINE , Tsutomu TAKAI
CPC classification number: H03H9/02818 , H03H9/02992 , H03H9/14541 , H03H9/1457 , H03H9/54
Abstract: An elastic wave device includes a low acoustic velocity film, a piezoelectric film, and an IDT electrode, which are laminated on a high acoustic velocity material. In the IDT electrode, first electrode fingers, or second electrode fingers, or each of the first electrode fingers and the second electrode fingers, includes a wide width portion with a dimension in a width direction larger than a dimension at a center in a length direction and being provided closer to at least one of a side of a proximal end and a side of a distal end than a central region, at least one of a first busbar and a second busbar includes cavities arranged in a busbar length direction, and at least one of the first busbar and the second busbar includes an inner busbar portion which is positioned closer to a side of the first electrode fingers or a side of the second electrode fingers than the cavities are and which extends in the length direction of the first busbar and the second busbar, a central busbar portion that includes the cavities, and an outer busbar portion.
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8.发明申请公开(公告)号：US20200328822A1
公开(公告)日：2020-10-15
申请号：US16914521
申请日：2020-06-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Katsuya DAIMON , Hideki IWAMOTO , Tsutomu TAKAI
Abstract: An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.
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9.发明申请公开(公告)号：US20200177153A1
公开(公告)日：2020-06-04
申请号：US16783203
申请日：2020-02-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Shou NAGATOMO , Hideki IWAMOTO , Tsutomu TAKAI
Abstract: An acoustic wave device includes a support substrate, a silicon nitride film stacked on the support substrate, a silicon oxide film stacked on the silicon nitride film, a piezoelectric body stacked on the silicon oxide film and made of lithium tantalite, and an IDT electrode provided on one main surface of the piezoelectric body. For a wavelength normalized film thickness of the piezoelectric body, an Euler angle of the piezoelectric body, a wavelength normalized film thickness of the silicon nitride film, a wavelength normalized film thickness of the silicon oxide film, and a wavelength normalized film thickness of the IDT electrode, values are set so that at least one of a response intensity of a first higher order mode, corresponding to the response intensity of a second higher order mode, and of a response intensity of a third higher mode is greater than about −2.4.
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公开(公告)号：US20190393858A1
公开(公告)日：2019-12-26
申请号：US16562506
申请日：2019-09-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki IWAMOTO , Tsutomu TAKAI , Ryo NAKAGAWA , Takashi YAMANE , Masanori OTAGAWA
Abstract: An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is λ. A product of C56 and C56 has a positive value, and an absolute value of C56 of the material layer is greater than an absolute value of C56 of the piezoelectric body ( C 11 C 12 C 13 C 14 C 15 C 16 C 21 C 22 C 23 C 24 C 25 C 26 C 31 C 32 C 33 C 34 C 35 C 36 C 41 C 42 C 43 C 44 C 45 C 46 C 51 C 52 C 53 C 54 C 55 C 56 C 61 C 62 C 63 C 64 C 65 C 66 ) . Expression 1
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