Abstract:
A surface acoustic wave filter device includes surface acoustic wave filters, one of which includes a longitudinally coupled resonator-type first filter section and a longitudinally coupled resonator-type second filter section. The second filter section is electrically connected in parallel or series with the first filter section on at least one of an input signal side and an output signal side. The first filter section includes a first IDT group including three IDTs. The second filter section includes a second IDT group including three IDTs. Another surface acoustic wave filter includes a third IDT group that is cascade connected to the first filter section and the second filter section and includes IDTs arranged in order in a line in a surface acoustic wave propagation direction.
Abstract:
A surface acoustic wave filter and a duplexer are provided. In a surface acoustic wave filter, on a piezoelectric substrate, a first IDT electrode composed of an input/output electrode and a first floating electrode, and a second IDT electrode composed of a ground electrode and a second floating electrode are arranged, and are connected in series to each other via the first floating electrode and the second floating electrode to form IDTs. In two serial IDTs arranged next to each other, an electrode finger of the input/output electrode in the first IDT electrode of the one serial IDT is arranged next to an electrode finger of the ground electrode in the second IDT electrode of the other serial IDT.
Abstract:
An elastic wave filter includes two longitudinally coupled resonator type elastic wave filter elements that are cascade connected with each other, each longitudinally coupled resonator type elastic wave filter element including three IDTs (interdigital transducers) arranged on a piezoelectric substrate in a transmitting direction of an elastic wave. In at least one of the longitudinally coupled resonator type elastic wave filter elements, electrode fingers of the IDTs that are cascade connected are arranged at a pitch that is smaller than a pitch of electrode fingers of the remaining IDT. The adverse effect of a parasitic capacitance in cascade connected wires disposed between the longitudinally coupled resonator type elastic wave filter elements is reduced so as to improve impedance matching of a cascade connected portion and to improve the VSWR characteristics of input-output terminals of the elastic wave filter.
Abstract:
An acoustic wave device includes first and second 3-IDT acoustic wave filters provided on a piezoelectric substrate. A second IDT in the first acoustic wave filter is electrically connected to a second IDT in the second acoustic wave filter and a third IDT in the first acoustic wave filter is electrically connected to a third IDT in the second acoustic wave filter to cascade the first acoustic wave filter with the second acoustic wave filter. An acoustic wave resonator is connected to a first IDT in the first acoustic wave filter. In the acoustic wave device, NA/NB is in a range from about 2.6 to about 3.5 and fB/fa is in a range from about 0.995 to about 1.010, where NA denotes the number of electrode fingers of the first IDT in the first acoustic wave filter, NB denotes the number of electrode fingers of each of the second and third IDTs in the first acoustic wave filter, fB denotes the end frequency of a stop band of each of reflectors in the first and second acoustic wave filters, and fa denotes an anti-resonant frequency of the acoustic wave resonator.
Abstract:
A surface acoustic wave filter device includes first and second longitudinally coupled resonator type surface acoustic wave filter units. The first and second filter units are cascade-connected to each other. A phase of a signal flowing through a first signal line electrically connecting second IDTs of the first and second surface acoustic wave filter units is different by about 180° from a phase of a signal flowing through a signal line electrically connecting third IDTs of the first and second surface acoustic wave filter units. A surface acoustic wave resonator is connected between the first and second signal lines. A resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a low frequency side of a filter passband or an anti-resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a high frequency side of the filter passband
Abstract:
A longitudinally coupled resonator boundary acoustic wave filter device includes a piezoelectric substrate made of LiNbO3 having a principal plane obtained by rotating the Y-axis through about 15 degrees +−10 degrees, a dielectric substrate made of silicon oxide and laminated on the piezoelectric substrate, and an electrode structure arranged at a boundary between the piezoelectric substrate and the dielectric substrate. The electrode structure includes a plurality of IDTs arranged in a direction in which a boundary acoustic wave propagates, and reflectors, wherein where in each of the plurality of IDTs, the overlap width of electrode fingers is W and the interval of electrode fingers is P, W/P is in a range of about 20 to about 45.
Abstract translation:一种纵向耦合的谐振器边界声波滤波器装置,包括由具有通过使Y轴旋转约15度±10度而获得的主平面的LiNbO 3制成的压电基板,由氧化硅制成并叠层在压电基板上的电介质基板, 以及布置在所述压电基板和所述电介质基板之间的边界处的电极结构。 电极结构包括沿声弹性波传播方向布置的多个IDT和反射器,其中在多个IDT中的每一个中,电极指的重叠宽度为W且电极指的间隔为P, W / P在约20至约45的范围内。
Abstract:
A surface acoustic wave apparatus comprises a piezoelectric substrate 17 on the bottom face of which IDT electrodes 3 and 4 and an annular ground electrode 6 which encloses the IDT electrodes 3 and 4 and is connected to the IDT electrode 3, and a base substrate on the top face of which an annular ground conductor 7 is formed and which has an internal ground conductor layer 10a and a bottom face ground conductor layer 11a connected to the annular ground conductor 7 and an internal ground conductor layer 10b and a bottom face ground conductor layer 11b connected to the IDT electrode 4. A first ground conductor composed of the internal ground conductor layer 10a and the bottom face ground conductor layer 11a is electrically separated from a second ground conductor composed of the internal ground conductor layer 10b and the bottom face ground conductor layer 11b. The apparatus has an excellent out-of-band attenuation characteristic.
Abstract:
A surface acoustic wave device having a given impedance includes multimode type filters connected in series. A composite impedance of the multimode type filters defines the given impedance of the surface acoustic wave device.
Abstract:
A duplexer includes two surface acoustic wave filter having different band center frequencies, and a phase matching circuit that matches the phases of the two surface acoustic wave filters to each other. In this duplexer, one of the two surface acoustic wave filters is a ladder type surface acoustic wave filter, while the other one of the two surface acoustic wave filters includes two or more dual-mode type surface acoustic wave filters that are connected in parallel.
Abstract:
A surface acoustic wave filter (cascaded dual mode SAW filter) includes three IDT electrodes disposed adjacent to each other along the propagation direction of a surface wave on a piezoelectric substrate and two primary-tertiary longitudinally-coupled dual mode SAW fliers cascaded and constructed by arranging grating reflectors on both sides of three IDT electrodes. At least a pair of electrode fingers are thinned out from the IDT electrodes disposed outside, and floating electrodes are then disposed.