SURFACE ACOUSTIC WAVE FILTER DEVICE AND DUPLEXER
    1.
    发明申请
    SURFACE ACOUSTIC WAVE FILTER DEVICE AND DUPLEXER 有权
    表面声波滤波器和双工器

    公开(公告)号:US20160094201A1

    公开(公告)日:2016-03-31

    申请号:US14959135

    申请日:2015-12-04

    Inventor: Yuichi TAKAMINE

    Abstract: A surface acoustic wave filter device includes surface acoustic wave filters, one of which includes a longitudinally coupled resonator-type first filter section and a longitudinally coupled resonator-type second filter section. The second filter section is electrically connected in parallel or series with the first filter section on at least one of an input signal side and an output signal side. The first filter section includes a first IDT group including three IDTs. The second filter section includes a second IDT group including three IDTs. Another surface acoustic wave filter includes a third IDT group that is cascade connected to the first filter section and the second filter section and includes IDTs arranged in order in a line in a surface acoustic wave propagation direction.

    Abstract translation: 表面声波滤波器装置包括表面声波滤波器,其中之一包括纵向耦合的谐振器型第一滤波器部分和纵向耦合的谐振器型第二滤波器部分。 第二滤波器部分在输入信号侧和输出信号侧中的至少一个上与第一滤波器部分并联或串联电连接。 第一滤波器部分包括包括三个IDT的第一IDT组。 第二滤波器部分包括包括三个IDT的第二IDT组。 另一个表面声波滤波器包括级联连接到第一滤波器部分和第二滤波器部分的第三IDT组,并且包括按表面声波传播方向的一行排列的IDT。

    Surface Acoustic Wave Filter and Duplexer
    2.
    发明申请
    Surface Acoustic Wave Filter and Duplexer 有权
    表面声波滤波器和双工器

    公开(公告)号:US20110227668A1

    公开(公告)日:2011-09-22

    申请号:US13131837

    申请日:2009-11-27

    Inventor: Hiroyuki Tanaka

    Abstract: A surface acoustic wave filter and a duplexer are provided. In a surface acoustic wave filter, on a piezoelectric substrate, a first IDT electrode composed of an input/output electrode and a first floating electrode, and a second IDT electrode composed of a ground electrode and a second floating electrode are arranged, and are connected in series to each other via the first floating electrode and the second floating electrode to form IDTs. In two serial IDTs arranged next to each other, an electrode finger of the input/output electrode in the first IDT electrode of the one serial IDT is arranged next to an electrode finger of the ground electrode in the second IDT electrode of the other serial IDT.

    Abstract translation: 提供表面声波滤波器和双工器。 在表面声波滤波器中,在压电基板上配置由输入输出电极和第一浮置电极构成的第一IDT电极和由接地电极和第二浮置电极构成的第二IDT电极,并且被连接 经由第一浮动电极和第二浮动电极彼此串联以形成IDT。 在彼此相邻布置的两个串行IDT中,一个串行IDT的第一IDT电极中的输入/输出电极的电极指在旁边的另一个串行IDT的第二IDT电极中的接地电极的电极指 。

    Elastic wave filter and communication device equipped with the elastic wave filter
    3.
    发明授权
    Elastic wave filter and communication device equipped with the elastic wave filter 有权
    弹性波滤波器和通讯装置配有弹性波滤波器

    公开(公告)号:US07760048B2

    公开(公告)日:2010-07-20

    申请号:US10561341

    申请日:2005-04-04

    Abstract: An elastic wave filter includes two longitudinally coupled resonator type elastic wave filter elements that are cascade connected with each other, each longitudinally coupled resonator type elastic wave filter element including three IDTs (interdigital transducers) arranged on a piezoelectric substrate in a transmitting direction of an elastic wave. In at least one of the longitudinally coupled resonator type elastic wave filter elements, electrode fingers of the IDTs that are cascade connected are arranged at a pitch that is smaller than a pitch of electrode fingers of the remaining IDT. The adverse effect of a parasitic capacitance in cascade connected wires disposed between the longitudinally coupled resonator type elastic wave filter elements is reduced so as to improve impedance matching of a cascade connected portion and to improve the VSWR characteristics of input-output terminals of the elastic wave filter.

    Abstract translation: 弹性波滤波器包括彼此串联连接的两个纵向耦合的谐振器型弹性波滤波器元件,每个纵向耦合的谐振器型弹性波滤波器元件包括布置在压电基片上的三个IDT(叉指换能器) 波。 在纵向耦合的谐振器型弹性波滤波器元件中的至少一个中,串联连接的IDT的电极指以小于剩余IDT的电极指的间距的间距排列。 布置在纵向耦合的谐振器型弹性波滤波器元件之间的级联连接线中的寄生电容的不利影响减小,从而改善级联连接部分的阻抗匹配并改善弹性波的输入 - 输出端子的VSWR特性 过滤。

    ACOUSTIC WAVE DEVICE
    4.
    发明申请
    ACOUSTIC WAVE DEVICE 有权
    声波设备

    公开(公告)号:US20090201105A1

    公开(公告)日:2009-08-13

    申请号:US12428715

    申请日:2009-04-23

    Applicant: Minefumi Ouchi

    Inventor: Minefumi Ouchi

    Abstract: An acoustic wave device includes first and second 3-IDT acoustic wave filters provided on a piezoelectric substrate. A second IDT in the first acoustic wave filter is electrically connected to a second IDT in the second acoustic wave filter and a third IDT in the first acoustic wave filter is electrically connected to a third IDT in the second acoustic wave filter to cascade the first acoustic wave filter with the second acoustic wave filter. An acoustic wave resonator is connected to a first IDT in the first acoustic wave filter. In the acoustic wave device, NA/NB is in a range from about 2.6 to about 3.5 and fB/fa is in a range from about 0.995 to about 1.010, where NA denotes the number of electrode fingers of the first IDT in the first acoustic wave filter, NB denotes the number of electrode fingers of each of the second and third IDTs in the first acoustic wave filter, fB denotes the end frequency of a stop band of each of reflectors in the first and second acoustic wave filters, and fa denotes an anti-resonant frequency of the acoustic wave resonator.

    Abstract translation: 声波装置包括设置在压电基板上的第一和第二3-IDT声波滤波器。 第一声​​波滤波器中的第二IDT电连接到第二声波滤波器中的第二IDT,并且第一声波滤波器中的第三IDT与第二声波滤波器中的第三IDT电连接以级联第一声学 滤波器与第二声波滤波器。 声波谐振器连接到第一声波滤波器中的第一IDT。 在声波装置中,NA / NB在约2.6至约3.5的范围内,并且fB / fa在约0.995至约1.010的范围内,其中NA表示第一声学中第一IDT的电极指的数量 波形滤波器,NB表示第一声波滤波器中的第二和第三IDT中的每一个的电极指的数量,fB表示第一和第二声波滤波器中每个反射器的阻带的结束频率,fa表示 声波谐振器的反谐振频率。

    SURFACE ACOUSTIC WAVE FILTER DEVICE AND DUPLEXER
    5.
    发明申请
    SURFACE ACOUSTIC WAVE FILTER DEVICE AND DUPLEXER 有权
    表面声波滤波器和双工器

    公开(公告)号:US20090179715A1

    公开(公告)日:2009-07-16

    申请号:US12414696

    申请日:2009-03-31

    Inventor: Yuichi TAKAMINE

    Abstract: A surface acoustic wave filter device includes first and second longitudinally coupled resonator type surface acoustic wave filter units. The first and second filter units are cascade-connected to each other. A phase of a signal flowing through a first signal line electrically connecting second IDTs of the first and second surface acoustic wave filter units is different by about 180° from a phase of a signal flowing through a signal line electrically connecting third IDTs of the first and second surface acoustic wave filter units. A surface acoustic wave resonator is connected between the first and second signal lines. A resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a low frequency side of a filter passband or an anti-resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a high frequency side of the filter passband

    Abstract translation: 表面声波滤波器装置包括第一和第二纵向耦合的谐振器型表面声波滤波器单元。 第一和第二过滤器单元彼此级联连接。 流过电连接第一和第二声表面波滤波器单元的第二IDT的第一信号线的信号的相位与流过电连接第一和第二表面声波滤波器单元的第三IDT的信号线的信号的相位相差约180° 第二声表面波滤波器单元。 表面声波谐振器连接在第一和第二信号线之间。 表面声波谐振器的共振点设置在滤波器通带的低频侧边缘附近的衰减区域中,或者声表面波谐振器的反共振点被设定在衰减区域中 滤波器通带的高频侧的边缘附近

    BOUNDARY ACOUSTIC WAVE FILTER
    6.
    发明申请
    BOUNDARY ACOUSTIC WAVE FILTER 有权
    边界声波滤波器

    公开(公告)号:US20090115547A1

    公开(公告)日:2009-05-07

    申请号:US12354162

    申请日:2009-01-15

    Abstract: A longitudinally coupled resonator boundary acoustic wave filter device includes a piezoelectric substrate made of LiNbO3 having a principal plane obtained by rotating the Y-axis through about 15 degrees +−10 degrees, a dielectric substrate made of silicon oxide and laminated on the piezoelectric substrate, and an electrode structure arranged at a boundary between the piezoelectric substrate and the dielectric substrate. The electrode structure includes a plurality of IDTs arranged in a direction in which a boundary acoustic wave propagates, and reflectors, wherein where in each of the plurality of IDTs, the overlap width of electrode fingers is W and the interval of electrode fingers is P, W/P is in a range of about 20 to about 45.

    Abstract translation: 一种纵向耦合的谐振器边界声波滤波器装置,包括由具有通过使Y轴旋转约15度±10度而获得的主平面的LiNbO 3制成的压电基板,由氧化硅制成并叠层在压电基板上的电介质基板, 以及布置在所述压电基板和所述电介质基板之间的边界处的电极结构。 电极结构包括沿声弹性波传播方向布置的多个IDT和反射器,其中在多个IDT中的每一个中,电极指的重叠宽度为W且电极指的间隔为P, W / P在约20至约45的范围内。

    Surface acoustic wave apparatus and communications equipment
    7.
    发明授权
    Surface acoustic wave apparatus and communications equipment 有权
    表面声波装置和通信设备

    公开(公告)号:US07453333B2

    公开(公告)日:2008-11-18

    申请号:US11210157

    申请日:2005-08-23

    CPC classification number: H03H9/6469 H03H9/1085

    Abstract: A surface acoustic wave apparatus comprises a piezoelectric substrate 17 on the bottom face of which IDT electrodes 3 and 4 and an annular ground electrode 6 which encloses the IDT electrodes 3 and 4 and is connected to the IDT electrode 3, and a base substrate on the top face of which an annular ground conductor 7 is formed and which has an internal ground conductor layer 10a and a bottom face ground conductor layer 11a connected to the annular ground conductor 7 and an internal ground conductor layer 10b and a bottom face ground conductor layer 11b connected to the IDT electrode 4. A first ground conductor composed of the internal ground conductor layer 10a and the bottom face ground conductor layer 11a is electrically separated from a second ground conductor composed of the internal ground conductor layer 10b and the bottom face ground conductor layer 11b. The apparatus has an excellent out-of-band attenuation characteristic.

    Abstract translation: 表面声波装置包括位于其底面上的IDT电极3和4的压电基片17和围绕IDT电极3和4并与IDT电极3连接的环形接地电极6, 其顶面形成有环形接地导体7,并且具有连接到环形接地导体7的内部接地导体层10a和底面接地导体层11a,以及内部接地导体层10b和底面接地 连接到IDT电极4的导体层11b。 由内部接地导体层10a和底面接地导体层11a组成的第一接地导体与由内部接地导体层10b和底面接地导体层11b组成的第二接地导体电分离。 该装置具有优异的带外衰减特性。

    Surface acoustic wave filter
    10.
    发明申请
    Surface acoustic wave filter 失效
    表面声波滤波器

    公开(公告)号:US20060226933A1

    公开(公告)日:2006-10-12

    申请号:US11398661

    申请日:2006-04-06

    Inventor: Naoki Takahashi

    Abstract: A surface acoustic wave filter (cascaded dual mode SAW filter) includes three IDT electrodes disposed adjacent to each other along the propagation direction of a surface wave on a piezoelectric substrate and two primary-tertiary longitudinally-coupled dual mode SAW fliers cascaded and constructed by arranging grating reflectors on both sides of three IDT electrodes. At least a pair of electrode fingers are thinned out from the IDT electrodes disposed outside, and floating electrodes are then disposed.

    Abstract translation: 表面声波滤波器(级联双模式SAW滤波器)包括沿着压电基板上的表面波的传播方向彼此相邻布置的三个IDT电极,以及通过布置来构造的两个第一三次纵向耦合的双模式SAW模式 三个IDT电极两侧的光栅反射器。 至少一对电极指从设置在外部的IDT电极变薄,然后布置浮动电极。

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