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公开(公告)号：US20250080054A1
公开(公告)日：2025-03-06
申请号：US18952195
申请日：2024-11-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
Abstract: A bias circuit includes: a first transistor having an emitter or source from which a bias is supplied to a first amplifier; a first terminal electrically connected to a circuit that controls a bias of a predetermined amplifier; and a first inverting amplifier having a first input terminal electrically connected to the emitter or source of the first transistor and a first output terminal electrically connected to a base or gate of the first transistor and the first terminal, the first inverting amplifier inverting and amplifying a voltage supplied to the first input terminal.
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公开(公告)号：US20240348271A1
公开(公告)日：2024-10-17
申请号：US18633537
申请日：2024-04-12
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kouhei JITOUSHO , Tetsurou ASHIDA , Tomoya ODA , Shohei IMAI
CPC classification number: H04B1/04 , H01P5/227 , H03F3/24 , H04B2001/0408
Abstract: A radio frequency module includes a carrier amplifier and a peak amplifier. A 90° hybrid circuit is connected to an input end of the carrier amplifier and an input end of the peak amplifier. A coupler is connected to an output end of the carrier amplifier and an output end of the peak amplifier. A control circuit varies a threshold value of a bias voltage of the peak amplifier based on a radio frequency signal input to the 90° hybrid circuit or the carrier amplifier, and a signal indicating a drive level of the carrier amplifier, in which the carrier amplifier and the peak amplifier are included in an integrated circuit. The control circuit is included in an integrated circuit, and the integrated circuit is disposed adjacent to the integrated circuit on a peak amplifier side.
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公开(公告)号：US20240333228A1
公开(公告)日：2024-10-03
申请号：US18621706
申请日：2024-03-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI , Tetsurou ASHIDA
CPC classification number: H03F1/0288 , H03F3/211 , H03G3/3042 , H03G2201/103
Abstract: A Doherty amplifier circuit includes a first integrated circuit and a second integrated circuit connected to the first integrated circuit. One of the first integrated circuit and the second integrated circuit includes a carrier amplifier that amplifies a radio-frequency signal, a peak amplifier that amplifies the radio-frequency signal, a variable gain control circuit that controls a gain of the radio-frequency signal based on a drive level signal that indicates a drive level of the carrier amplifier, and a bias circuit that inputs a bias based on an output from the variable gain control circuit to the peak amplifier. The first integrated circuit on a silicon die includes at least the variable gain control circuit.
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公开(公告)号：US20240333226A1
公开(公告)日：2024-10-03
申请号：US18618180
申请日：2024-03-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
CPC classification number: H03F1/0288 , H03F3/211 , H03F3/213 , H03F2200/451
Abstract: A Doherty amplifier circuit includes a carrier amplifier that amplifies a high frequency signal, a peak amplifier that amplifies the high frequency signal, and a control circuit that detects a drive level of the carrier amplifier with reference to a detection result of an input signal of the carrier amplifier and controls the peak amplifier based on a detection result.
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公开(公告)号：US20240250643A1
公开(公告)日：2024-07-25
申请号：US18405476
申请日：2024-01-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
CPC classification number: H03F1/0288 , H03F3/211
Abstract: A Doherty amplifier includes: a carrier amplifier that is formed on a semiconductor substrate and that includes amplifiers in one or more stages including a first amplifier in one stage to which a first bias current is inputted; a peak amplifier that is formed on the semiconductor substrate and that includes amplifiers in two or more stages including a second amplifier to which a second bias current smaller than the first bias current is inputted; and a first resistor that is inserted in series into a power supply path to the second amplifier.
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Patent Agency Ranking
公开(公告)号：US20240186956A1
公开(公告)日：2024-06-06
申请号：US18441291
申请日：2024-02-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
IPC: H03F1/02
CPC classification number: H03F1/0288 , H03F2200/151 , H03F2200/451
Abstract: A Doherty amplifier circuit includes a carrier amplifier that amplifies an input high frequency signal, a peak amplifier that amplifies an input high frequency signal, a first bias circuit that applies a bias to the carrier amplifier, a second bias circuit that applies a bias to the peak amplifier, and a control circuit that controls the second bias circuit on the basis of an input high frequency signal and a signal indicating a drive level of the carrier amplifier.
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公开(公告)号：US20240079999A1
公开(公告)日：2024-03-07
申请号：US18506246
申请日：2023-11-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
CPC classification number: H03F1/0288 , H03F3/45475 , H03F2200/451
Abstract: A power amplifier circuit includes a first amplifier that, in a region where an input signal level is a first level or higher, amplifies a signal split from an input signal and outputs an amplified signal; a first converter connected to an output side of the first amplifier and converts an impedance on the output side of the first amplifier; and at least one or more second amplifiers that, in a region where the input signal level is a second level or higher, amplify a signal split from the input signal and output an amplified signal. Output sides of the second amplifiers are connected in series with an output side of the first converter.
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公开(公告)号：US20230378922A1
公开(公告)日：2023-11-23
申请号：US18362424
申请日：2023-07-31
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI , Satoshi TANAKA
CPC classification number: H03F3/211 , H03F1/0288 , H03F1/0216 , H03F2200/451
Abstract: A power amplifier module includes a carrier circuit including at least one carrier amplifier; a peak circuit including at least one peak amplifier; a carrier control circuit that controls base current or gate voltage of a certain carrier amplifier in the carrier circuit; and a carrier output circuit that is connected to a carrier amplifier at an output side in the carrier circuit and that supplies a carrier control signal for controlling the base current or the gate voltage of the certain carrier amplifier to the carrier control circuit.
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公开(公告)号：US20230378105A1
公开(公告)日：2023-11-23
申请号：US18366169
申请日：2023-08-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
IPC: H01L23/66 , H03F3/24 , H03F1/08 , H01L21/027 , H01L23/00
CPC classification number: H01L23/66 , H03F3/245 , H03F1/086 , H01L21/0274 , H01L24/16 , H01L2924/1421 , H03F2200/451 , H03F2200/537 , H01L2223/6616 , H01L2223/6672 , H01L2224/16055 , H01L2224/16146
Abstract: A power amplifier circuit includes a first carrier amplifier and a first peak amplifier. The first carrier amplifier includes a differential amplifier circuit having first and second transistors. The first peak amplifier is formed in or on a semiconductor substrate, which is the same semiconductor substrate in or on which the first carrier amplifier is formed. The emitter or the source of the first transistor is electrically connected to the emitter or the source of the second transistor. The emitter or the source of the first transistor is electrically connected to a ground electrode via a first bump. The emitter or the source of the second transistor is electrically connected to the ground electrode via a second bump. The second bump is different from the first bump.
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公开(公告)号：US20210384867A1
公开(公告)日：2021-12-09
申请号：US17339539
申请日：2021-06-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shohei IMAI
Abstract: A power amplifier circuit includes a first amplifier that, in a region where an input signal level is a first level or higher, amplifies a signal split from an input signal and outputs an amplified signal; a first converter connected to an output side of the first amplifier and converts an impedance on the output side of the first amplifier; and at least one or more second amplifiers that, in a region where the input signal level is a second level or higher, amplify a signal split from the input signal and output an amplified signal. Output sides of the second amplifiers are connected in series with an output side of the first converter. The first converter makes an absolute value of the impedance on the output side of the first amplifier larger than absolute values of impedances on the output sides of the second amplifiers.
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