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26 条记录 (耗时 0.028 秒)

    Semiconductor logic circuit apparatus
    23.
    发明授权
    Semiconductor logic circuit apparatus 失效
    半导体逻辑电路设备

    公开(公告)号：US5280201A

    公开(公告)日：1994-01-18

    申请号：US760997

    申请日：1991-09-17

    申请人： Kumiko Fujimori ,  Hirofumi Shinohara ,  Noriaki Matsumoto ,  Shuichi Kato

    发明人： Kumiko Fujimori ,  Hirofumi Shinohara ,  Noriaki Matsumoto ,  Shuichi Kato

    IPC分类号： G11C11/412 ,  G11C11/417 ,  H03K3/356 ,  H03K19/20 ,  H03K5/159

    CPC分类号： H03K3/356165 ,  H03K3/356147

    摘要： A semiconductor logic circuit apparatus which include a first switching element consisting of a field effect transistor for changing holding data, an inverter circuit whose input is connected with one end of the first switching element, a feedback circuit whose input and output are connected with the output and input of the inverter circuit, and a second switching element connected between the output of the feedback circuit and first or second potential. The second switching element is effective for enabling and disabling the feedback circuit.The first and second switching elements are opened/closed in reverse phase to each other. Feedback of the feedback circuit is prevented until the inverter circuit is driven from its "0" to its "1" holding state, so that driving of the inverter circuit becomes easy and operational stability and operating speed are enhanced.

    摘要翻译： 一种半导体逻辑电路装置，包括由用于改变保持数据的场效应晶体管组成的第一开关元件，其输入端与第一开关元件的一端连接的反相器电路，其输入和输出与输出端连接的反馈电路 逆变器电路的输入以及连接在反馈电路的输出与第一或第二电位之间的第二开关元件。 第二开关元件对于启用和禁用反馈电路是有效的。 第一和第二开关元件以相反的方式彼此打开/关闭。 反馈电路的反馈被阻止，直到逆变器电路从其“0”驱动到“1”保持状态，使得逆变器电路的驱动变得容易，并且提高了操作稳定性和操作速度。

    Thin aluminum-based alloy foil and wire and a process for producing same
    24.
    发明授权
    Thin aluminum-based alloy foil and wire and a process for producing same 失效
    薄铝基合金箔和线及其制造方法

    公开(公告)号：US5306363A

    公开(公告)日：1994-04-26

    申请号：US574654

    申请日：1990-08-20

    申请人： Tsuyoshi Masumoto ,  Akihisa Inoue ,  Hitoshi Yamaguchi ,  Noriaki Matsumoto ,  Kazuhiko Kita

    发明人： Tsuyoshi Masumoto ,  Akihisa Inoue ,  Hitoshi Yamaguchi ,  Noriaki Matsumoto ,  Kazuhiko Kita

    IPC分类号： B21C1/00 ,  C21D8/02 ,  C21D8/06 ,  C22C45/08 ,  C22F1/00

    CPC分类号： C22C45/08

    摘要： An aluminum-based alloy foil or thin aluminum-based alloy wire is produced from an amorphous material made by a quenching and solidifying process and having a composition represented by the general formula:Al.sub.a M.sub.b X.sub.cwherein M is one or more elements selected from a group consisting of V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Ti, Mo, W, Ca, Li, Mg and Si; X is one or more elements selected from a group consisting of Y, Nb, Hf, Ta, La, Ce, Sm, Nd and Mm (misch metal); and a, b, and c are atomic percentages falling within the following range:50.ltoreq.a.ltoreq.950.5.ltoreq.b.ltoreq.35 and0.5.ltoreq.c.ltoreq.25Such foil or wire has a smooth surface and a very small and uniform foil thickness or wire diameter, contains at least 50% by volume of an amorphous phase, and has excellent strength and resistance to corrosion. The foil thickness and wire diameter are reduced in a rolling or drawing process at an elevated temperature over a short time period.

    摘要翻译： 铝基合金箔或薄铝基合金线由淬火和固化方法制成的无定形材料制成，具有由以下通式表示的组成：AlaMbXc，其中M是选自以下的一种或多种元素： V，Cr，Mn，Fe，Co，Ni，Cu，Zr，Ti，Mo，W，Ca，Li，Mg和Si; X是选自Y，Nb，Hf，Ta，La，Ce，Sm，Nd和Mm（混合稀土金属）中的一种或多种元素; 和a，b和c是原子百分比在以下范围内：50 <= a <= 95 0.5 <= b <= 35和0.5 <= c <= 25这种箔或线具有光滑的表面和非常小的 箔厚度均匀，线径均匀，含有至少50体积％的非晶相，具有优异的强度和耐腐蚀性。 箔片厚度和线径在轧制或拉伸过程中在较短的时间内在升高的温度下降低。

    Semiconductor memory device having a plurality of ports
    25.
    发明授权
    Semiconductor memory device having a plurality of ports 失效
    具有多个端口的半导体存储器件

    公开(公告)号：US5177706A

    公开(公告)日：1993-01-05

    申请号：US666518

    申请日：1991-03-11

    申请人： Hirofumi Shinohara ,  Noriaki Matsumoto ,  Kumiko Fujimori

    发明人： Hirofumi Shinohara ,  Noriaki Matsumoto ,  Kumiko Fujimori

    IPC分类号： G11C11/41 ,  G11C8/16

    CPC分类号： G11C8/16

    摘要： A semiconductor memory device includes a plurality of ports enabling simultaneous writing and reading of data of M words.times.N bits. A plurality of memory cells are arranged in (M/n) rows.times.(n.times.N) columns in a memory call array, write and read word lines are commonly connected to the memory cells of one row, and write column selecting line are connected to every n (the number of words) memory cells of the memory cells of one row. Write and read bit lines are connected to the memory cells of one column. Data is input to the write bit line from an input terminal through a write circuit. and data read from the memory cell is output to an output terminal through a sense amplifier. A first port is formed by the write word lines, the write column selecting lines, the write bit lines and the input terminal, and a second port is formed by the read word lines, read bit lines and the output terminal. M, N and n are natural numbers and M, N.gtoreq.n.

    摘要翻译： 半导体存储器件包括多个端口，能够同时写入和读取M字×N位的数据。 多个存储单元以存储器调用阵列中的（M / n）行x（n×N）列排列，写入和读取字线通常连接到一行的存储单元，并且写列选择线连接到每n个 （单词数）一行存储单元的存储单元。 写和读位线连接到一列的存储单元。 数据通过写入电路从输入端输入写入位线。 并且从存储单元读取的数据通过读出放大器输出到输出端。 第一端口由写字线，写列选择线，写位线和输入端形成，第二端口由读字线，读位线和输出端形成。 M，N和n是自然数，M，N> / = n。

    Laser processing method
    26.
    发明授权
    Laser processing method 失效
    激光加工方法

    公开(公告)号：US4734550A

    公开(公告)日：1988-03-29

    申请号：US897830

    申请日：1986-08-19

    申请人： Seiji Imamura ,  Noriaki Matsumoto

    发明人： Seiji Imamura ,  Noriaki Matsumoto

    IPC分类号： B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08

    CPC分类号： B23K26/0853 ,  B23K26/066 ,  B23K26/0732 ,  B23K26/364

    摘要： A laser processing method comprises the steps of generating a pulsed laser beam having a substantially circular shape; modifying the beam to a substantially rectangular shape; and scribing the surface of a workpiece with the rectangular beam to form grooves therein. The scribing step may include scanning the surface with the beam in a predetermined pattern, and aligning two parallel sides of the rectangular beam in parallel with the direction of the scanning. The beam may be made square, or may have unequal sides with the longer sides preferably arranged in parallel with the scanning direction.

    摘要翻译： 激光加工方法包括以下步骤：产生具有大致圆形形状的脉冲激光束; 将梁修改为基本上矩形的形状; 并用矩形梁划刻工件的表面以在其中形成凹槽。 划线步骤可以包括以预定图案用光束扫描表面，并且使矩形光束的两个平行边与扫描的方向平行地对准。 梁可以制成正方形，或者可以具有不等边，其中较长的边优选地布置成与扫描方向平行。