Abstract:
A solid-state imaging device includes a pixel signal processing unit including a plurality of pixels; a plurality of first charge storage circuits which are configured to hold the first signal charges generated by the photoelectric conversion units and output first signal voltages as first pixel signals; and a plurality of second charge storage circuits which are configured to hold second signal charges and output second signal voltages, and a differential analog/digital conversion unit includes: a plurality of first differential calculation units; a plurality of first analog/digital conversion units which are configured to perform analog/digital conversion to the first differential pixel signals and output digital values indicating magnitudes of the first differential pixel signals; and a plurality of second analog/digital conversion units which are configured to perform analog/digital conversion to the second pixel signal and output digital values indicating magnitudes of the second pixel signals.
Abstract:
A solid-state imaging apparatus in which a first substrate, a second substrate electrically connected to the first substrate through a connector and circuit elements disposed in the first substrate and in the second substrate, and forming pixels, each of the pixels includes a photoelectric conversion element disposed in the first substrate and configured to generate a signal corresponding to an amount of incident light, and a signal holder disposed in the second substrate in correspondence with the photoelectric conversion element and configured to hold an output signal corresponding to the signal generated by the corresponding photoelectric conversion element, and the signal holder is formed by laminating a capacitance element including a plurality of electrodes on a plurality of layers within the second substrate.
Abstract:
A solid-state imaging device and an imaging device are capable of transferring a control signal to pixels formed in each chip of the solid-state imaging device, in which the plurality of chips are connected to each other, without an increase in a circuit size of the solid-state imaging device or an increase in the number of connectors between the chips. The solid-state imaging device, in which first and second substrates are electrically connected to each other via the connectors, includes a pixel unit in which a plurality of pixels each including a photoelectric conversion element disposed in the first substrate and a reading circuit disposed in the second substrate are arrayed two-dimensionally, and a read control circuit that controls reading of a signal from the pixels. The read control circuit includes a pulse generation unit and a logical unit.
Abstract:
A solid-state image pickup device according to one aspect of the present invention includes, but is not limited to: first and second substrates on which circuit elements constituting a pixel; a coupler electrically coupling the first and second substrates; a first photoelectric conversion element on the first substrate; a first amplifier circuit on the first substrate; a first storing unit on the second substrate; and an output circuit on the second substrate. The first photoelectric conversion element performs photoelectric conversion on a first incident light to generate a first signal. The first amplifier circuit is coupled in series to the first photoelectric conversion element. The first amplifier circuit amplifies the first signal to generate a first amplified signal and output the first amplified signal to the coupler. The first storing unit stores the first amplified signal. The output circuit sequentially outputs the first amplified signal stored.