Abstract:
A solid-state image pickup device includes: a pixel array in which a plurality of pixels each outputting a photoelectric conversion signal are disposed; a reference voltage generator that generates a temperature detection voltage changing in accordance with a change in temperature and a reference voltage not depending on a change in temperature; a read circuit that performs signal processing of the photoelectric conversion signal output by the pixel array and the temperature detection voltage generated by the reference voltage generator and reads the photoelectric conversion signal and the temperature detection voltage that are processed; an output circuit that outputs both the photoelectric conversion signal and the temperature detection voltage for which the signal processing has been performed by the read circuit to the outside; and a bias generator that supplies a bias voltage generated based on the reference voltage to both the read circuit and the output circuit.
Abstract:
A solid-state imaging device includes a first semiconductor substrate including a pixel array unit, a second semiconductor substrate stacked on a surface of a side opposite to a side on which light is incident in the first semiconductor substrate and on which a pixel control circuit and a reading circuit are arranged, and a plurality of connection electrodes configured to electrically connect pixel control signal lines between the first semiconductor substrate and the second semiconductor substrate, wherein the connection electrodes electrically connect pixel control signal lines within a pixel immediate region which overlaps a region where the pixel array unit is arranged in the first semiconductor substrate, and the pixel control circuit is arranged along an edge of the pixels in either one of a row direction and a column direction arranged in the pixel array unit in the pixel immediate region.
Abstract:
A solid-state imaging device includes a first semiconductor substrate to which light is incident; a second semiconductor substrate stacked to the first semiconductor substrate; n first photoelectric conversion devices periodically arranged in the first semiconductor substrate and generating first electric charge signals; n first reading circuits arranged in correspondence with the n first photoelectric conversion devices in the first semiconductor substrate, respectively, each of the n first reading circuits accumulating the first electric charge signal outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal; a driving circuit sequentially outputting the first pixel signal; m second photoelectric conversion devices periodically arranged in one of the first/second semiconductor substrates and generating second electric charge signals; and m second reading circuits sequentially outputting a second pixel signal, wherein m and n are natural numbers equal to 2 or more than 2.
Abstract:
A solid-state imaging device includes a first substrate, a second substrate, an electrode portion, a first substrate connecting portion, an electrostatic protection circuit, and a second substrate connecting portion. A photoelectric conversion element is disposed on the first substrate. A part of the peripheral circuit is arranged on the second substrate. The electrode portion has a connection surface. The first substrate connecting portion electrically connects the electrode portion and the second substrate. The electrostatic protection circuit is connected to a circuit between the first substrate connecting portion and the peripheral circuit. The second substrate connecting portion electrically connects the peripheral circuit and the photoelectric conversion element. The electrostatic protection circuit is disposed at a position such that the electrostatic protection circuit does not overlap any of the first substrate connecting portion and the second substrate connecting portion.
Abstract:
A solid-state image pickup device according to one aspect of the present invention includes, but is not limited to: first and second substrates on which circuit elements constituting a pixel; a coupler electrically coupling the first and second substrates; a first photoelectric conversion element on the first substrate; a first amplifier circuit on the first substrate; a first storing unit on the second substrate; and an output circuit on the second substrate. The first photoelectric conversion element performs photoelectric conversion on a first incident light to generate a first signal. The first amplifier circuit is coupled in series to the first photoelectric conversion element. The first amplifier circuit amplifies the first signal to generate a first amplified signal and output the first amplified signal to the coupler. The first storing unit stores the first amplified signal. The output circuit sequentially outputs the first amplified signal stored.
Abstract:
A solid-state imaging device includes a first semiconductor substrate to which light is incident; a second semiconductor substrate stacked to the first semiconductor substrate; n first photoelectric conversion devices periodically arranged in the first semiconductor substrate and generating first electric charge signals; n first reading circuits arranged in correspondence with the n first photoelectric conversion devices in the first semiconductor substrate, respectively, each of the n first reading circuits accumulating the first electric charge signal outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal; a driving circuit sequentially outputting the first pixel signal; m second photoelectric conversion devices periodically arranged in one of the first/second semiconductor substrates and generating second electric charge signals; and m second reading circuits sequentially outputting a second pixel signal, wherein m and n are natural numbers equal to 2 or more than 2.
Abstract:
A solid-state imaging device includes a plurality of pixels in which photoelectric conversion units that generate signal charges are arranged in a matrix, a plurality of first charge accumulation circuits that hold the signal charges and output the signal charges as a first pixel signal, a plurality of charge transfer circuits that transfer the signal charges to the first charge accumulation circuit, and a plurality of second charge accumulation circuits that hold signal charges based on the signal charges generated by the photoelectric conversion units and output the signal charges as a second pixel signal in which the number of pixels is reduced to a predetermined number, and the charge transfer circuit transfers the signal charges in the same exposure period to the second charge accumulation circuit when transferring the signal charges of the same exposure to the first charge accumulation circuit.
Abstract:
In the solid-state imaging device, first and second substrates are electrically connected to each other via connectors electrically connecting the first and second substrates. A photoelectric conversion element is disposed in the first substrate. A read circuit is disposed in the second substrate and reads a signal generated by the photoelectric conversion element and transmitted via the connector. In a signal processing circuit including elements or circuits performing signal processing on the read signal, some of the elements or circuits are disposed in the first substrate, the remaining elements or circuits are disposed in the second substrate, and the elements or circuits disposed in the first and second substrates are electrically connected to each other via the connector.
Abstract:
A solid-state imaging apparatus in which a first substrate, a second substrate electrically connected to the first substrate through a connector and circuit elements disposed in the first substrate and in the second substrate, and forming pixels, each of the pixels includes a photoelectric conversion element disposed in the first substrate and configured to generate a signal corresponding to an amount of incident light, and a signal holder disposed in the second substrate in correspondence with the photoelectric conversion element and configured to hold an output signal corresponding to the signal generated by the corresponding photoelectric conversion element, and the signal holder is formed by laminating a capacitance element including a plurality of electrodes on a plurality of layers within the second substrate.
Abstract:
A solid-state image pickup device includes: a pixel array in which a plurality of pixels each outputting a photoelectric conversion signal are disposed; a reference voltage generator that generates a temperature detection voltage changing in accordance with a change in temperature and a reference voltage not depending on a change in temperature; a read circuit that performs signal processing of the photoelectric conversion signal output by the pixel array and the temperature detection voltage generated by the reference voltage generator and reads the photoelectric conversion signal and the temperature detection voltage that are processed; an output circuit that outputs both the photoelectric conversion signal and the temperature detection voltage for which the signal processing has been performed by the read circuit to the outside; and a bias generator that supplies a bias voltage generated based on the reference voltage to both the read circuit and the output circuit.