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公开(公告)号：US20080261345A1
公开(公告)日：2008-10-23
申请号：US12163110
申请日：2008-06-27
IPC分类号： H01L21/00
CPC分类号： G01L9/0073 , G01L9/0045
摘要： Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
摘要翻译： 制造半导体压力传感器的方法，其中在硅衬底中，挖沟和界定壁; 闭合层外延生长，封闭顶部的沟槽并形成悬浮膜; 进行热处理以使壁的硅迁移并在悬浮膜下方形成封闭空腔; 并且形成用于将悬浮膜的偏转转换成电信号的结构。
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22.发明授权Process for manufacturing thick suspended structures of semiconductor material 有权用于制造半导体材料的厚悬浮结构的方法公开(公告)号：US07871894B2
公开(公告)日：2011-01-18
申请号：US11541376
申请日：2006-09-27
IPC分类号： H01L21/76
CPC分类号： B81C1/00158 , B81B2201/025 , B81B2203/0109 , B81B2203/0315
摘要： A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.
摘要翻译： 制造半导体材料的悬浮结构的方法设想的步骤：提供具有正面的半导体材料的整体; 在所述整体式主体内形成掩埋空腔，所述掩埋腔在所述前表面的一定距离处延伸并且与所述前表面一起界定所述整体式主体的表面区域，所述表面区域具有第一厚度; 进行增稠热处理，使得整体式体的半导体材料朝向表面区域移动，从而在掩埋空腔之上形成悬浮结构，该悬浮结构的第二厚度大于第一厚度。 增稠热处理是退火处理。
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公开(公告)号：US07763487B2
公开(公告)日：2010-07-27
申请号：US11417683
申请日：2006-05-04
CPC分类号： G01L9/0045 , G01L13/025
摘要： A process for manufacturing an integrated differential pressure sensor includes forming, in a monolithic body of semiconductor material having a first face and a second face, a cavity extending at a distance from the first face and delimiting therewith a flexible membrane, forming an access passage in fluid communication with the cavity, and forming, in the flexible membrane, at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and delimits, together with the second face, a portion of the monolithic body. In order to form the access passage, the monolithic body is etched so as to form an access trench extending through it.
摘要翻译： 一种用于制造集成差压传感器的方法，包括在具有第一面和第二面的半导体材料的整体中形成一个与第一面相距一定距离的空腔，并将其限定在柔性膜上，形成入口通道 与空腔流体连通，以及在柔性膜中形成至少一个换能元件，其构造成将柔性膜的变形转换为电信号。 空腔形成在距第二面一定距离处的位置，并与第二面一起界定整体式的一部分。 为了形成进入通道，对整体式主体进行蚀刻以便形成延伸通过其的通道沟槽。
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24.发明授权Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured 有权制造具有SOI绝缘阱和半导体晶片的半导体晶片的制造方法公开(公告)号：US07906406B2
公开(公告)日：2011-03-15
申请号：US11879738
申请日：2007-07-17
IPC分类号： H01L21/76
CPC分类号： H01L21/76264 , H01L21/7682
摘要： A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.
摘要翻译： 制造包括SOI绝缘阱的半导体晶片的工艺包括在半导体主体的管芯区域中形成穿过掩埋腔并分布在管芯区域中的掩埋腔和半导体结构元件。 该方法还包括选择性地将第一相邻的半导体结构元件氧化并设置在封闭区域内的步骤，并且防止第二半导体结构元件在封闭区域外的氧化，从而在闭合区域内选择性地形成管芯埋入介电层。
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25.发明申请公开(公告)号：US20080224242A1
公开(公告)日：2008-09-18
申请号：US12047830
申请日：2008-03-13
CPC分类号： B81C1/00158
摘要： A process for manufacturing an integrated membrane made of semiconductor material includes the step of forming, in a monolithic body of semiconductor material having a front face, a buried cavity, extending at a distance from the front face and delimiting with the front face a surface region of the monolithic body, the surface region forming a membrane that is suspended above the buried cavity. The process further envisages the step of forming an insulation structure in a surface portion of the monolithic body to electrically insulate the membrane from the monolithic body; and the further and distinct step of setting the insulation structure at a distance from the membrane so that it will be positioned outside the membrane at a non-zero distance of separation.
摘要翻译： 制造由半导体材料制成的集成膜的方法包括以下步骤：在具有前表面的半导体材料的整体中形成一个与前表面相距一定距离的掩埋腔， 的单体，表面区域形成悬浮在掩埋腔上方的膜。 该方法进一步设想在整体式主体的表面部分形成绝缘结构以将膜与整体式电绝缘的步骤; 以及将绝缘结构设置在离膜一定距离处的进一步和不同的步骤，使得其将以非零分离距离定位在膜的外部。
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26.发明授权Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured 有权制造具有SOI绝缘阱和半导体晶片的半导体晶片的制造方法公开(公告)号：US09105690B2
公开(公告)日：2015-08-11
申请号：US13023039
申请日：2011-02-08
IPC分类号： H01L29/08 , H01L21/762 , H01L21/768
CPC分类号： H01L21/76264 , H01L21/7682
摘要： A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.
摘要翻译： 制造包括SOI绝缘阱的半导体晶片的工艺包括在半导体主体的管芯区域中形成穿过掩埋腔并分布在管芯区域中的掩埋腔和半导体结构元件。 该方法还包括选择性地将第一相邻的半导体结构元件氧化并设置在封闭区域内的步骤，并且防止第二半导体结构元件在封闭区域外的氧化，从而在闭合区域内选择性地形成管芯埋入介电层。
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27.发明授权Method for forming buried cavities within a semiconductor body, and semiconductor body thus made 有权在半导体本体内形成掩埋空穴的方法以及由此制成的半导体本体公开(公告)号：US08420428B2
公开(公告)日：2013-04-16
申请号：US12873685
申请日：2010-09-01
CPC分类号： B81C1/00047 , B01L3/502707 , B01L7/52 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0816 , B01L2300/1827 , B81B2201/0264 , B81B2203/0315
摘要： A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.
摘要翻译： 一种用于在半导体主体内形成掩埋空腔的方法，设想了以下步骤：提供具有由半导体材料制成的体区的晶片; 在本体区域中挖掘在它们的半导体材料壁之间划定的沟槽; 形成用于在脱氧气氛存在下关闭所述沟槽的闭合层，以便使所述沟槽内的脱氧气氛充满; 进行热处理，使壁的半导体材料迁移并形成掩埋腔。 此外，在进行热处理之前，在沟槽顶部的闭合层上形成基本上不透氢的阻挡层。
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公开(公告)号：US08173513B2
公开(公告)日：2012-05-08
申请号：US12163110
申请日：2008-06-27
IPC分类号： H01L21/76
CPC分类号： G01L9/0073 , G01L9/0045
摘要： Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
摘要翻译： 制造半导体压力传感器的方法，其中在硅衬底中，挖沟和界定壁; 闭合层外延生长，封闭顶部的沟槽并形成悬浮膜; 进行热处理以使壁的硅迁移并在悬浮膜下方形成封闭空腔; 并且形成用于将悬浮膜的偏转转换成电信号的结构。
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公开(公告)号：US08008738B2
公开(公告)日：2011-08-30
申请号：US12826388
申请日：2010-06-29
CPC分类号： G01L9/0045 , G01L13/025
摘要： An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.
摘要翻译： 集成的差压传感器包括在半导体材料的整体主体中的第一面和第二面，空腔与第一面延伸一定距离，并由其中由通过外延材料部分由整体式形成的柔性膜界定 并且部分地通过来自整体式的退火的外延材料，与空腔流体连通的进入通道，以及柔性膜中的至少一个换能元件，其构造成将柔性膜的变形转换为电信号。 空腔形成在距离第二面一定距离处的位置，并且在第二面处与整体式主体的一部分界定。
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公开(公告)号：US20100269595A1
公开(公告)日：2010-10-28
申请号：US12826388
申请日：2010-06-29
CPC分类号： G01L9/0045 , G01L13/025
摘要： An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.
摘要翻译： 集成的差压传感器包括在半导体材料的整体主体中的第一面和第二面，空腔与第一面延伸一定距离，并由其中由通过外延材料部分由整体式形成的柔性膜界定 并且部分地通过来自整体式的退火的外延材料，与空腔流体连通的进入通道，以及柔性膜中的至少一个换能元件，其构造成将柔性膜的变形转换为电信号。 空腔形成在距离第二面一定距离处的位置，并且在第二面处与整体式主体的一部分界定。
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