公开(公告)号：US07238565B2

公开(公告)日：2007-07-03

申请号：US10904985

申请日：2004-12-08

申请人： Fernando Guarin ,  J. Edwin Hostetter, Jr. ,  Stewart E. Rauch, III ,  Ping-Chuan Wang ,  Zhijian J. Yang

发明人： Fernando Guarin ,  J. Edwin Hostetter, Jr. ,  Stewart E. Rauch, III ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC分类号： H01L21/8249

CPC分类号： H01L29/7304 ,  H01L29/7378

摘要： A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (V″CB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.

摘要翻译： 提供了一种用于回收由雪崩热载体引起的降解的方法，其包括使表现出雪崩降解的空闲双极晶体管经历热退火步骤，所述热退火步骤增加了晶体管的温度，从而恢复了双极晶体管的雪崩劣化。 在一个实施例中，退火源是自发热结构，其是与双极晶体管的发射极并排放置的含Si电阻器。 在恢复步骤期间，包括自发热结构的双极晶体管被置于空闲模式（即，没有偏压），并且来自单独电路的电流流过自热结构。 在本发明的另一个实施例中，退火步骤是在低于雪崩状况（V“CB”）的情况下向双极晶体管提供高正向电流（围绕峰值fT电流或更大）的结果， 小于1V）。 在上述条件下，可以回收约40％以上的降解。 在本发明的又一实施例中，热退火步骤可以包括快速热退火（RTA），炉退火，激光退火或尖峰退火。

公开(公告)号：US07675378B2

公开(公告)日：2010-03-09

申请号：US12114029

申请日：2008-05-02

申请人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

发明人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC分类号： H03B5/12 ,  H03L7/099

CPC分类号： H03B5/1206 ,  H03B5/1243

摘要： Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

摘要翻译： 公开了能够进行非易失性自校正以补偿过程变化并确保振荡器的中心频率保持在预定频率范围内的压控振荡器（VCO）的实施例。 该VCO包含一对与电感 - 电容（LC）电路并联连接的变容二极管，用于输出具有与输入电压成比例的频率的周期性信号。 控制回路使用可编程可变电阻电熔丝设置要施加到该变容二极管的补偿电压。 通过调整补偿电压，可以调整一对变容二极管的电容，以便响应于设定的输入电压选择性地增加或减小周期信号的频率，从而使该周期信号的频率达到预定的 频率范围。 还公开了用于这种VCO的相关设计结构的实施例以及用于操作这样的VCO的相关方法。

公开(公告)号：US07609121B2

公开(公告)日：2009-10-27

申请号：US12057494

申请日：2008-03-28

申请人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

发明人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC分类号： H03B5/12 ,  H03L7/099

CPC分类号： H03B5/1206 ,  H03B5/1243

摘要： Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

摘要翻译： 公开了能够进行非易失性自校正以补偿过程变化并确保振荡器的中心频率保持在预定频率范围内的压控振荡器（VCO）的实施例。 该VCO包含一对与电感 - 电容（LC）电路并联连接的变容二极管，用于输出具有与输入电压成比例的频率的周期性信号。 控制回路使用可编程可变电阻电熔丝设置要施加到该变容二极管的补偿电压。 通过调整补偿电压，可以调整一对变容二极管的电容，以便响应于设定的输入电压选择性地增加或减小周期信号的频率，从而使该周期信号的频率达到预定的 频率范围。 还公开了用于这种VCO的相关设计结构的实施例以及用于操作这样的VCO的相关方法。

公开(公告)号：US20090243739A1

公开(公告)日：2009-10-01

申请号：US12114029

申请日：2008-05-02

申请人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

发明人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC分类号： H03B5/08 ,  G06F17/50

CPC分类号： H03B5/1206 ,  H03B5/1243

摘要： Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

公开(公告)号：US20090243738A1

公开(公告)日：2009-10-01

申请号：US12057494

申请日：2008-03-28

申请人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

发明人： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC分类号： H03B5/08

CPC分类号： H03B5/1206 ,  H03B5/1243

摘要： Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

摘要翻译： 公开了能够进行非易失性自校正以补偿过程变化并确保振荡器的中心频率保持在预定频率范围内的压控振荡器（VCO）的实施例。 该VCO包含一对与电感 - 电容（LC）电路并联连接的变容二极管，用于输出具有与输入电压成比例的频率的周期性信号。 控制回路使用可编程可变电阻电熔丝设置要施加到该变容二极管的补偿电压。 通过调整补偿电压，可以调整一对变容二极管的电容，以便响应于设定的输入电压选择性地增加或减小周期信号的频率，从而使该周期信号的频率达到预定的 频率范围。 还公开了用于这种VCO的相关设计结构的实施例以及用于操作这样的VCO的相关方法。

公开(公告)号：US07961032B1

公开(公告)日：2011-06-14

申请号：US12627282

申请日：2009-11-30

申请人： Zhijian Yang ,  Ping-Chuan Wang ,  Kai Di Feng

发明人： Zhijian Yang ,  Ping-Chuan Wang ,  Kai Di Feng

IPC分类号： H03K17/60

CPC分类号： H03F1/302

摘要： A method of recovering gain in a bipolar transistor includes: providing a bipolar transistor including an emitter, a collector, and a base disposed between junctions at the emitter and the collector; reverse biasing the junction disposed between the emitter and the base with an operational voltage and for an operational time period, so that a current gain β of the transistor is degraded; idling the transistor, and generating a repair current Ibr into the base, while forward biasing the junction disposed between the emitter and the base with a first repair voltage (VEBR), and while at least partly simultaneously reverse biasing the junction disposed between the collector and the base with a second repair voltage (VCBR), for a repair time period (TR), so that the gain is at least party recovered; wherein VEBR, VCBR and TR have the proportional relationship: TR ∝ (Δβ)2×exp [1/(Tam+Rth×le×VCER)], VCER=VBER+VCBR, and le=β×Ibr, β is the normal current gain of the transistor, Δβ is the target recovery gain of the transistor in percentage, Tam is the ambient temperature in degrees K, Ibr is the repair current to the base in μamps, Rth is the self-heating thermal resistance of the transistor in K/W, TR is in seconds. The invention further includes structures for implementing the method.

摘要翻译： 一种在双极晶体管中恢复增益的方法，包括：提供一个包括发射极，集电极和设置在发射极和集电极之间的结之间的基极的双极晶体管; 使用工作电压和工作时间周期反向偏置设置在发射极和基极之间的结，使得电流增益＆bgr; 的晶体管劣化; 使晶体管怠速，并产生修复电流Ibr到基极，同时以第一修复电压（VEBR）向前偏置设置在发射极和基极之间的结，并且至少部分地同时反向偏置设置在集电极和 具有第二修复电压（VCBR）的基座，用于修复时间段（TR），使得增益至少被回收; 其中VEBR，VCBR和TR具有比例关系：TRα（＆Dgr;＆bgr;）2×exp [1 /（Tam + Rth×le×VCER）]，VCER = VBER + VCBR，和le =＆bgr;×Ibr， ＆bgr 是晶体管的正常电流增益，＆Dgr; 是晶体管的目标恢复增益百分比，谭是以K为单位的环境温度，Ibr是以μ为单位的基极修复电流，Rth是晶体管的自热热阻，K / W，TR在 秒。 本发明还包括用于实现该方法的结构。

公开(公告)号：US20100261318A1

公开(公告)日：2010-10-14

申请号：US12822459

申请日：2010-06-24

申请人： Kai Di Feng ,  Louis Lu-Chen Hsu ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Kai Di Feng ,  Louis Lu-Chen Hsu ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H01L21/82

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L23/5256 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/3011 ,  H01L2924/00014

摘要： Programmable fuse-type through silicon vias (TSVs) in silicon chips are provided with non-programmable TSVs in the same chip. The programmable fuse-type TSVs may employ a region within the TSV structure having sidewall spacers that restrict the cross-sectional conductive path of the TSV adjacent a chip surface contact pad. Application of sufficient current by programming circuitry causes electromigration of metal to create a void in the contact pad and, thus, an open circuit. Programming may be carried out by complementary circuitry on two adjacent chips in a multi-story chip stack.

公开(公告)号：US20070205434A1

公开(公告)日：2007-09-06

申请号：US11744621

申请日：2007-05-04

申请人： Fernando Guarin ,  J. Hostetter ,  Stewart Rauch ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Fernando Guarin ,  J. Hostetter ,  Stewart Rauch ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H01L29/70 ,  H01L21/8222

CPC分类号： H01L29/7304 ,  H01L29/7378

摘要： A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (VCB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.

摘要翻译： 提供了一种用于回收由雪崩热载体引起的降解的方法，其包括使表现出雪崩降解的空闲双极晶体管经历热退火步骤，所述热退火步骤增加了晶体管的温度，从而恢复了双极晶体管的雪崩劣化。 在一个实施例中，退火源是自发热结构，其是与双极晶体管的发射极并排放置的含Si电阻器。 在恢复步骤期间，包括自发热结构的双极晶体管被置于空闲模式（即，没有偏压），并且来自单独电路的电流流过自热结构。 在本发明的另一个实施例中，退火步骤是在双极晶体管的周围提供高正向电流（围绕峰值fT电流或更大）的结果，同时在低于雪崩条件（V CB）的情况下运行 超过1 V）。 在上述条件下，可以回收约40％以上的降解。 在本发明的又一实施例中，热退火步骤可以包括快速热退火（RTA），炉退火，激光退火或尖峰退火。

公开(公告)号：US07545161B2

公开(公告)日：2009-06-09

申请号：US11832796

申请日：2007-08-02

申请人： Louis Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Louis Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： G01R31/02

CPC分类号： G01R31/2621

摘要： An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.

摘要翻译： 用于定量测量MOSFET的阈值电压偏移的片上电路。 该电路包括可编程Vt参考传感器; 可编程Vt监控传感器; 以及比较器，用于从提供输出标志信号的参考和监视传感器接收输入。 MOSFET器件电压阈值的偏移可以监视工艺变化，几何感应，等离子体损伤，应力和热载体以及其他器件损坏。 相同的电路还测量集成电路芯片或晶片中的任何两个节点之间的电压差。

公开(公告)号：US08211756B2

公开(公告)日：2012-07-03

申请号：US12822459

申请日：2010-06-24

申请人： Kai Di Feng ,  Louis Lu-Chen Hsu ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Kai Di Feng ,  Louis Lu-Chen Hsu ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H01L21/82

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L23/5256 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/3011 ,  H01L2924/00014

摘要： Programmable fuse-type through silicon vias (TSVs) in silicon chips are provided with non-programmable TSVs in the same chip. The programmable fuse-type TSVs may employ a region within the TSV structure having sidewall spacers that restrict the cross-sectional conductive path of the TSV adjacent a chip surface contact pad. Application of sufficient current by programming circuitry causes electromigration of metal to create a void in the contact pad and, thus, an open circuit. Programming may be carried out by complementary circuitry on two adjacent chips in a multi-story chip stack.

摘要翻译： 硅芯片中的可编程熔丝式硅通孔（TSV）在同一芯片中提供非可编程TSV。 可编程保险丝型TSV可以采用TSV结构内的区域，其具有侧壁间隔件，其限制邻近芯片表面接触焊盘的TSV的横截面导电路径。 通过编程电路施加足够的电流导致金属的电迁移，从而在接触焊盘中产生空隙，并因此产生开路。 编程可以由多层芯片堆叠中的两个相邻芯片上的互补电路来执行。