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公开(公告)号:US20190244899A1
公开(公告)日:2019-08-08
申请号:US16388692
申请日:2019-04-18
IPC分类号: H01L23/528 , H01L23/522 , H01L25/065 , H01L23/00 , H01L25/00 , H01L21/768
CPC分类号: H01L23/5283 , H01L21/76838 , H01L23/5226 , H01L24/02 , H01L24/05 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2224/05541 , H01L2224/05551 , H01L2224/05552 , H01L2224/05571 , H01L2224/05573 , H01L2224/05578 , H01L2224/056 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2224/0807 , H01L2224/08111 , H01L2224/08121 , H01L2224/08146 , H01L2224/08147 , H01L2224/08148 , H01L2224/08237 , H01L2224/08238 , H01L2224/16145 , H01L2224/80 , H01L2224/80035 , H01L2224/80895 , H01L2224/80896 , H01L2224/80935 , H01L2225/06513 , H01L2225/06555 , H01L2225/06593 , H01L2924/013 , H01L2924/00014 , H01L2924/206 , H01L2924/00012
摘要: A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
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公开(公告)号:US20190237419A1
公开(公告)日:2019-08-01
申请号:US16383455
申请日:2019-04-12
发明人: Paul M. ENQUIST
IPC分类号: H01L23/00 , H01L25/065 , H01L21/50 , H01L25/00
CPC分类号: H01L24/09 , H01L21/50 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/80 , H01L24/89 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/036 , H01L2224/03616 , H01L2224/03825 , H01L2224/05005 , H01L2224/05007 , H01L2224/05026 , H01L2224/05078 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05561 , H01L2224/05562 , H01L2224/05571 , H01L2224/05573 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05676 , H01L2224/05681 , H01L2224/05684 , H01L2224/05686 , H01L2224/08112 , H01L2224/08121 , H01L2224/08123 , H01L2224/08145 , H01L2224/08147 , H01L2224/80011 , H01L2224/80031 , H01L2224/80035 , H01L2224/80047 , H01L2224/80075 , H01L2224/80097 , H01L2224/80099 , H01L2224/8019 , H01L2224/80194 , H01L2224/80895 , H01L2224/80896 , H01L2224/80935 , H01L2224/80986 , H01L2225/06513 , H01L2924/00014 , H01L2224/29339 , H01L2224/29386 , H01L2924/053 , H01L2924/04941 , H01L2924/04953 , H01L2924/049 , H01L2924/01014 , H01L2924/01005 , H01L2924/01074 , H01L2924/051 , H01L2924/042
摘要: A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.
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公开(公告)号:US20190206841A1
公开(公告)日:2019-07-04
申请号:US16106521
申请日:2018-08-21
发明人: Young Lyong KIM , Seung Duk BAEK
IPC分类号: H01L25/065 , H01L23/00 , H01L23/31
CPC分类号: H01L25/0657 , H01L21/561 , H01L23/291 , H01L23/293 , H01L23/3128 , H01L23/3135 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L23/5383 , H01L24/05 , H01L24/09 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0652 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05184 , H01L2224/05567 , H01L2224/05568 , H01L2224/0557 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/06181 , H01L2224/08145 , H01L2224/09181 , H01L2224/13007 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/16146 , H01L2224/16147 , H01L2224/16148 , H01L2224/16237 , H01L2224/17181 , H01L2224/73204 , H01L2224/81005 , H01L2224/81191 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/014 , H01L2924/013 , H01L2924/01082 , H01L2924/01047 , H01L2924/01079 , H01L2924/01029 , H01L2924/01083 , H01L2924/0103 , H01L2924/01074 , H01L2924/01023 , H01L2224/03 , H01L2224/11 , H01L2224/81
摘要: A semiconductor package includes a first semiconductor chip having a first chip substrate, the first chip substrate having a first upper surface and a first lower surface opposite to each other, a first through-silicon via (TSV), a lower connection pad and a first lower passivation layer on the first lower surface of the first chip substrate, the first lower passivation layer exposing a portion of the lower connection pad, an upper connection pad and a first upper passivation layer on the first upper surface of the first chip substrate, the first upper passivation layer including a first upper inorganic material layer, and a second semiconductor chip connected to the first semiconductor chip, the second semiconductor chip including a second TSV, wherein the first lower passivation layer has a stacked structure of a first lower inorganic material layer and a lower organic material layer.
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公开(公告)号:US10115649B1
公开(公告)日:2018-10-30
申请号:US15849721
申请日:2017-12-21
发明人: Makoto Motoyoshi
IPC分类号: H01L23/485 , H01L23/31 , H01L21/768 , H01L27/06 , H01L21/48 , H01L23/522 , H01L21/02 , H01L27/02 , H01L23/00
CPC分类号: H01L23/3128 , H01L21/02513 , H01L21/4825 , H01L21/7681 , H01L21/7685 , H01L23/3178 , H01L23/3192 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L27/0207 , H01L27/0688 , H01L2224/0345 , H01L2224/03452 , H01L2224/0361 , H01L2224/03622 , H01L2224/03845 , H01L2224/0401 , H01L2224/05013 , H01L2224/05022 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05553 , H01L2224/05568 , H01L2224/05572 , H01L2224/0558 , H01L2224/05644 , H01L2224/05649 , H01L2224/05655 , H01L2224/05666 , H01L2224/05676 , H01L2224/05681 , H01L2224/05684 , H01L2224/1145 , H01L2224/1147 , H01L2224/13007 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13023 , H01L2224/13024 , H01L2224/13144 , H01L2224/1411 , H01L2224/1412 , H01L2224/16148 , H01L2224/16238 , H01L2224/17107 , H01L2224/81191 , H01L2224/81207 , H01L2224/81444 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/01032 , H01L2924/01051 , H01L2924/0105 , H01L2924/01082 , H01L2924/0103 , H01L2924/01029 , H01L2924/00012
摘要: A semiconductor device encompasses a connecting base including a semiconductor substrate and a surface insulating-film on the semiconductor substrate, a passivation film covering the surface insulating-film and surface electrode on the surface insulating-film, establishing a groove that exposes a central part of the surface electrode, a barrier-metal film spanning from the bottom of the groove to an upper face of the passivation film, and micro-bumps arranged on the barrier-metal film located on the passivation film.
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公开(公告)号:US10074617B2
公开(公告)日:2018-09-11
申请号:US15376437
申请日:2016-12-12
发明人: Shin-Puu Jeng , Hsien-Wen Liu
IPC分类号: H01L29/40 , H01L23/00 , H01L23/48 , H01L21/02 , H01L23/31 , H01L23/538 , H01L23/29 , H01L25/10 , H01L23/498
CPC分类号: H01L23/564 , H01L21/02118 , H01L21/02164 , H01L21/0217 , H01L23/293 , H01L23/3171 , H01L23/3192 , H01L23/49811 , H01L23/49833 , H01L23/5389 , H01L24/05 , H01L24/20 , H01L24/32 , H01L24/73 , H01L24/92 , H01L25/105 , H01L2224/024 , H01L2224/03332 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/04105 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05569 , H01L2224/05571 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/12105 , H01L2224/13022 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16238 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/18162 , H01L2924/3511 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/014 , H01L2924/00012
摘要: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed on the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad and a post-passivation interconnect (PPI) structure formed at least in the protection layer. The PPI structure is electrically connected to the conductive pad. The semiconductor device structure also includes a first moisture-resistant layer formed over the protection layer, and the protection layer and the first moisture-resistant layer are made of different materials. The semiconductor device structure further includes an under bump metallurgy (UBM) layer formed over the first moisture-resistant layer and connected to the PPI structure.
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公开(公告)号:US20180226373A1
公开(公告)日:2018-08-09
申请号:US15942692
申请日:2018-04-02
发明人: Wen-Hsiung Lu , Hsuan-Ting Kuo , Tsung-Yuan Yu , Hsien-Wei Chen , Ming-Da Cheng , Chung-Shi Liu
IPC分类号: H01L23/00 , H01L23/532 , H01L21/56 , H01L23/31 , H01L23/29 , H01L21/768 , H01L23/525
CPC分类号: H01L24/11 , H01L21/566 , H01L21/76885 , H01L23/293 , H01L23/3192 , H01L23/525 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02331 , H01L2224/0345 , H01L2224/0347 , H01L2224/036 , H01L2224/0362 , H01L2224/03828 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05186 , H01L2224/05548 , H01L2224/05569 , H01L2224/05582 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/10126 , H01L2224/1112 , H01L2224/11334 , H01L2224/1134 , H01L2224/11462 , H01L2224/1148 , H01L2224/1181 , H01L2224/11849 , H01L2224/1191 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16238 , H01L2224/81191 , H01L2224/814 , H01L2224/81411 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2924/04953 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要: Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector.
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公开(公告)号:US10037962B2
公开(公告)日:2018-07-31
申请号:US15584498
申请日:2017-05-02
发明人: Tsung-Yuan Yu , Hsien-Wei Chen , Jie Chen
IPC分类号: H01L23/00 , H01L23/544 , H01L23/13 , H05K1/11 , H05K3/34
CPC分类号: H01L24/17 , H01L23/13 , H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2223/54426 , H01L2224/0345 , H01L2224/04 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05551 , H01L2224/05559 , H01L2224/05568 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05681 , H01L2224/05684 , H01L2224/11 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16238 , H01L2224/1705 , H01L2224/32225 , H01L2224/73204 , H01L2224/81007 , H01L2224/8114 , H01L2224/81191 , H01L2224/81193 , H01L2224/81365 , H01L2224/81815 , H01L2224/92125 , H01L2225/1058 , H01L2924/00014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H05K1/111 , H05K3/3436 , H05K2201/09036 , H05K2201/10674 , H05K2201/10734 , H01L2924/014 , H01L2224/05552
摘要: A package includes a first package component, a second package component over the first package component, and a solder region bonding the first package component to the second package component. At least one ball-height control stud separates the first package component and the second package component from each other, and defines a standoff distance between the first package component and the second package component.
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公开(公告)号:US10020244B2
公开(公告)日:2018-07-10
申请号:US13431583
申请日:2012-03-27
CPC分类号: H01L23/481 , H01L24/05 , H01L24/29 , H01L24/32 , H01L2224/04026 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/29144 , H01L2924/0132 , H01L2924/10158 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/13064 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01032 , H01L2924/01014
摘要: The present disclosure relates to providing via plugs in vias of a semiconductor material. The via plugs may be formed of a polymer, such as a polyimide, that can withstand subsequent soldering and operating temperatures. The via plugs effectively fill the vias to prevent the vias from being filled substantially with solder during a subsequent soldering processes.
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公开(公告)号:US09994741B2
公开(公告)日:2018-06-12
申请号:US14967353
申请日:2015-12-13
申请人: James L. Hedrick , Robert Dennis Miller , Deborah Ann Neumayer , Sampath Purushothaman , Mary E. Rothwell , Willi Volksen , Roy R. Yu
发明人: James L. Hedrick , Robert Dennis Miller , Deborah Ann Neumayer , Sampath Purushothaman , Mary E. Rothwell , Willi Volksen , Roy R. Yu
IPC分类号: C08K3/04 , C09J9/00 , H01L25/065 , H01L25/00 , H01L23/00 , C09J11/04 , C09J11/06 , C09J179/08 , C09J179/04 , C09J183/04 , B82Y30/00 , B82Y40/00 , C08K7/24 , C08K5/5425 , C08K5/5465 , C08K5/548 , C08K5/544
CPC分类号: C09J9/00 , B82Y30/00 , B82Y40/00 , C08K3/041 , C08K5/5425 , C08K5/544 , C08K5/5465 , C08K5/548 , C08K7/24 , C08K2201/01 , C09J11/04 , C09J11/06 , C09J179/04 , C09J179/08 , C09J183/04 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/68363 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/11831 , H01L2224/13147 , H01L2224/13184 , H01L2224/13562 , H01L2224/13565 , H01L2224/1369 , H01L2224/16147 , H01L2224/27444 , H01L2224/27452 , H01L2224/27612 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/73204 , H01L2224/81005 , H01L2224/81141 , H01L2224/81191 , H01L2224/81201 , H01L2224/81903 , H01L2224/83005 , H01L2224/83192 , H01L2224/83201 , H01L2224/8385 , H01L2224/83855 , H01L2224/83856 , H01L2224/83895 , H01L2224/9202 , H01L2224/9211 , H01L2224/94 , H01L2225/06544 , Y10S977/742 , Y10S977/833 , Y10S977/843 , H01L2924/01006 , H01L2924/00014 , H01L2924/01029 , H01L2924/00012 , H01L2224/81 , H01L2224/83
摘要: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.
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公开(公告)号:US20180114770A1
公开(公告)日:2018-04-26
申请号:US15837704
申请日:2017-12-11
发明人: Lin-Chih Huang , Hung-An Teng , Hsin-Yu Chen , Tsang-Jiuh Wu , Cheng-Chieh Hsieh
IPC分类号: H01L23/00 , H01L25/065 , H01L21/683 , H01L21/78 , H01L25/00 , H01L23/498 , H01L23/538 , H01L23/31 , H01L23/14 , H01L21/56
CPC分类号: H01L24/81 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/78 , H01L23/145 , H01L23/3114 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/17 , H01L24/96 , H01L25/0655 , H01L25/50 , H01L2221/68345 , H01L2221/68359 , H01L2224/03 , H01L2224/0401 , H01L2224/04105 , H01L2224/05026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2224/11 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/12105 , H01L2224/13111 , H01L2224/16235 , H01L2224/16238 , H01L2224/81001 , H01L2224/81005 , H01L2224/81192 , H01L2224/92124 , H01L2224/96 , H01L2224/97 , H01L2924/00011 , H01L2924/01029 , H01L2924/01047 , H01L2924/01322 , H01L2924/15311 , H01L2924/18161 , H01L2924/18162 , H01L2224/81805 , H01L2924/00014 , H01L2924/00012 , H01L2224/81
摘要: Integrated circuit packages and methods of forming the same are provided. One or more redistribution layers are formed on a carrier. First connectors are formed on a first side of the RDLs. Dies are bonded to the first side of the RDLs using the first connectors. An encapsulant is formed on the first side of the RDLs around the dies. The carrier is de-bonded from the overlaying structure and second connectors are formed on a second side of the RDLs. The resulting structure in diced to form individual packages.
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