公开(公告)号：US20150262930A1

公开(公告)日：2015-09-17

申请号：US14206360

申请日：2014-03-12

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul SONG ,  Choh Fei YEAP ,  Zhongze WANG ,  Niladri MOJUMDER ,  Mustafa BADAROGLU

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/02167 ,  H01L21/76829 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76883 ,  H01L21/76895 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Systems and methods are directed to an integrated circuit comprising a reduced height M1 metal line formed of an exemplary material with lower mean free path than Copper, for local routing of on-chip circuit elements of the integrated circuit, wherein the height of the reduced height M1 metal line is lower than a minimum allowed or allowable height of a conventional M1 metal line formed of Copper. The exemplary materials for forming the reduced height M1 metal line include Tungsten (W), Molybdenum (Mo), and Ruthenium (Ru), wherein these exemplary materials also exhibit lower capacitance and lower RC delays than Copper, while providing high electromigration reliability.

Abstract translation: 系统和方法涉及一种集成电路，其包括由具有比铜的平均自由路径更低的示例性材料形成的减小的高度M1金属线，用于集成电路的片上电路元件的局部布线，其中降低的高度 M1金属线低于由铜形成的常规M1金属线的最小允许或允许的高度。 用于形成还原高度M1金属线的示例性材料包括钨（W），钼（Mo）和钌（Ru），其中这些示例性材料还具有比铜更低的电容和更低的RC延迟，同时提供高电迁移可靠性。