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28 条记录 (耗时 0.022 秒)

    Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
    21.
    发明授权
    Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers 失效
    用于制备具有受控分布的氧沉淀成核中心的硅晶片的方法

    公开(公告)号：US5401669A

    公开(公告)日：1995-03-28

    申请号：US062926

    申请日：1993-05-17

    申请人： Robert Falster ,  Giancarlo Ferrero ,  Graham Fisher ,  Massimiliano Olmo ,  Marco Pagani

    发明人： Robert Falster ,  Giancarlo Ferrero ,  Graham Fisher ,  Massimiliano Olmo ,  Marco Pagani

    IPC分类号： H01L21/322 ,  H01L21/306

    CPC分类号： H01L21/3225 ,  Y10S148/024 ,  Y10S438/909

    摘要： A process for treatment of a silicon wafer to achieve therein a controlled distribution of the density of oxygen precipitate nucleation centers. In the process, one face of the wafer is shielded and the other, unshielded, face of the wafer is exposed to an atmosphere which contains nitrogen or a nitrogen compound gas and which has an essential absence of oxygen during a rapid thermal treatment at a temperature of at least about 1175.degree. C. The process generates nucleation centers which serve as sites for the growth of oxygen precipitates during a subsequent heat treatment and which have a peak density proximate the unshielded face of the wafer.

    摘要翻译： 一种用于处理硅晶片以在其中实现氧沉淀成核中心的受控分布的方法。 在该过程中，晶片的一个面被屏蔽，并且晶片的另一个未屏蔽的表面暴露于含有氮或氮化合物气体的气氛中，并且在温度的快速热处理期间基本不存在氧 至少约1175℃。该方法产生成核中心，其用作在随后的热处理期间生长氧沉淀物的位点，并且其具有靠近晶片的非屏蔽面的峰值密度。

    NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORMANCE SILICON POWER DEVICES
    23.
    发明申请
    NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORMANCE SILICON POWER DEVICES 有权
    高性能硅电力设备中的非均匀少数载体生命周期分布

    公开(公告)号：US20070238266A1

    公开(公告)日：2007-10-11

    申请号：US11763043

    申请日：2007-06-14

    申请人： Robert Falster

    发明人： Robert Falster

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3225 ,  H01L21/221 ,  H01L21/3221 ,  H01L29/167 ,  H01L29/32 ,  Y10S257/913

    摘要： This invention is directed to a process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a segment having the desired vacancy concentration profile. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies.

    摘要翻译： 本发明涉及一种用于热处理单晶硅片段以影响片段中少数载流子复合中心轮廓的方法。 对该段进行热处理以形成晶格空位，该空位在大部分硅中形成。 然后将该片段以允许一些但不是全部晶格空位扩散到前表面以产生具有所需空位浓度分布的片段的速率冷却。 铂原子然后扩散到硅基质中，使得所得的铂浓度分布基本上与晶格空位的浓度分布有关。

    Process for preparing single crystal silicon having improved gate oxide integrity
    26.
    发明申请
    Process for preparing single crystal silicon having improved gate oxide integrity 有权
    制备具有改善的栅极氧化物完整性的单晶硅的方法

    公开(公告)号：US20050160967A1

    公开(公告)日：2005-07-28

    申请号：US11089102

    申请日：2005-03-24

    申请人： Robert Falster ,  Vladimir Voronkov ,  Paolo Mutti ,  Francesco Bonoli

    发明人： Robert Falster ,  Vladimir Voronkov ,  Paolo Mutti ,  Francesco Bonoli

    IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/20 ,  C30B33/02 ,  H01L21/26 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  Y10T428/21

    摘要： A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the central axis extending substantially from the front surface to the back surface in which crystal lattice vacancies are the predominant intrinsic point defect, the segment having a radial width of at least about 25% of the radius and containing agglomerated vacancy defects and a residual concentration of crystal lattice vacancies wherein (i) the agglomerated vacancy defects have a radius of less than about 70 nm and (ii) the residual concentration of crystal lattice vacancy intrinsic point defects is less than the threshold concentration at which uncontrolled oxygen precipitation occurs upon subjecting the wafer to an oxygen precipitation heat treatment.

    摘要翻译： 一种用于制造单晶硅晶片的方法，包括前表面，后表面，连接前表面和后表面的侧表面，垂直于前表面和后表面的中心轴线以及围绕中心轴线轴对称的线段 基本上从前表面延伸到后表面，其中晶格空位是主要的固有点缺陷，该段具有至少约半径半径的约25％的径向宽度并且包含凝聚的空位缺陷和晶格空位的残留浓度 其中（i）聚集的空位缺陷具有小于约70nm的半径，和（ii）晶格空位本征点缺陷的残留浓度小于在晶片经受氧气时发生不受控制的氧沉淀的阈值浓度 沉淀热处理。

    Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor
    27.
    发明授权
    Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor 有权
    理想的氧气沉淀外延硅晶片和氧气外扩散工艺

    公开(公告)号：US06306733B1

    公开(公告)日：2001-10-23

    申请号：US09626635

    申请日：2000-07-27

    申请人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    发明人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC分类号： H01L21322

    CPC分类号： H01L21/3225 ,  Y10S257/913 ,  Y10T428/21 ,  Y10T428/249969

    摘要： A process for preparing an silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, a wafer having interstitial oxygen atoms is first subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.

    摘要翻译： 一种制备硅外延晶片的方法。 晶片具有在其上沉积有外延层的前表面，后表面和前表面和后表面之间的主体区域，其中主体区域含有氧沉淀物的浓度。 在此过程中，首先对具有间隙氧原子的晶片进行氧沉淀热处理，使氧析出物的成核和生长达到足以稳定氧析出物的尺寸。 然后在氧沉淀稳定晶片的表面上沉积外延层。

    Method for detecting sources of contamination in silicon using a contamination monitor wafer
    28.
    发明授权
    Method for detecting sources of contamination in silicon using a contamination monitor wafer 失效
    使用污染监测器晶片检测硅污染源的方法

    公开(公告)号：US5418172A

    公开(公告)日：1995-05-23

    申请号：US84405

    申请日：1993-06-29

    申请人： Robert Falster ,  Gabriella Borionetti ,  Robert A. Craven

    发明人： Robert Falster ,  Gabriella Borionetti ,  Robert A. Craven

    IPC分类号： H01L23/544 ,  H01L21/66

    CPC分类号： H01L22/34

    摘要： A method for detecting transition metal contamination in or on equipment and fluids used or being evaluated for use in the manufacture, handling, or shipping of silicon wafers and electronic devices manufactured on silicon wafers. A contamination monitor wafer having an average minority carrier lifetime greater than about 250 microseconds is processed using one or more pieces of equipment or fluids. As part of, or subsequent to the processing step, the contamination monitor wafer is exposed to a temperature of at least 600.degree. C. and the minority carrier lifetime values of the contamination monitor wafer is thereafter determined. To insure that the recombination process is dot dominated by the effects of oxygen precipitates, the contamination monitor wafer should have an oxygen precipitate density of less than 10.sup.8 oxygen precipitates per cubic centimeter before and after being exposed to said temperature of at least 600.degree. C.

    摘要翻译： 用于检测在硅晶片和硅晶片上制造的硅晶片和电子器件的制造，处理或运输中使用或被评估的设备和流体中的过渡金属污染的方法。 使用一件或多件设备或流体处理具有大于约250微秒的平均少数载流子寿命的污染监测器晶片。 作为处理步骤的一部分或之后，污染监测晶片暴露于至少600℃的温度，此后确定污染监测晶片的少数载流子寿命值。 为了确保重组过程被氧沉淀物的影响所主导，污染监测晶片在暴露于至少600℃的温度之前和之后，应具有每立方厘米少于108个氧沉淀物的氧沉淀物密度。