公开(公告)号：US20150171121A1

公开(公告)日：2015-06-18

申请号：US14631023

申请日：2015-02-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Ho Moon ,  Jong-Moo Huh ,  Sung-Ho Kim

IPC: H01L27/12 ,  H01L49/02 ,  H01L21/266 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/266 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3265 ,  H01L28/60 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.

Abstract translation: 多晶硅（poly-Si）层的制造方法，使用该方法的有机发光显示装置的制造方法以及使用该方法制造的有机发光显示装置。 该方法包括在具有第一和第二区域的衬底上形成非晶硅（a-Si）层，热处理a-Si层以将a-Si层部分地结晶成部分结晶的Si层，通过 热处理，用激光束选择性地照射第一区域以结晶部分结晶的Si层。