公开(公告)号：US20150194333A1

公开(公告)日：2015-07-09

申请号：US14516774

申请日：2014-10-17

申请人： Samsung Electronics Co., Ltd.

发明人： Woo-Kyung You ,  Sang-Ho Rha ,  Jong-Min Baek ,  Sang-Hoon Ahn ,  Nae-In Lee

IPC分类号： H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/3065 ,  H01L21/764 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76877

摘要： Methods of forming a wiring structure are provided including forming an insulating interlayer on a substrate and forming a sacrificial layer on the insulating interlayer. The sacrificial layer is partially removed to define a plurality of openings. Wiring patterns are formed in the openings. The sacrificial layer is transformed into a modified sacrificial layer by a plasma treatment. The modified sacrificial layer is removed by a wet etching process. An insulation layer covering the wiring patterns is formed on the insulating interlayer. The insulation layer defines an air gap therein between neighboring wiring patterns.

摘要翻译： 提供形成布线结构的方法包括在基板上形成绝缘中间层并在绝缘中间层上形成牺牲层。 牺牲层被部分地去除以限定多个开口。 在开口中形成接线图案。 通过等离子体处理将牺牲层转变成改性的牺牲层。 通过湿蚀刻工艺去除改性牺牲层。 在绝缘中间层上形成覆盖布线图案的绝缘层。 绝缘层在相邻布线图案之间限定了气隙。