公开(公告)号：US20210391333A1

公开(公告)日：2021-12-16

申请号：US17412801

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Younsoo KIM ,  Young-Lim PARK ,  Jeong-Gyu SONG ,  Se Hyoung AHN ,  Changmu AN

IPC: H01L27/108 ,  H01L21/02 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.

公开(公告)号：US20210118982A1

公开(公告)日：2021-04-22

申请号：US16839641

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Younsoo KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/285

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.