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公开(公告)号:US10748906B2
公开(公告)日:2020-08-18
申请号:US16110658
申请日:2018-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jonghyuk Park , Byoungho Kwon , Inho Kim , Hyesung Park , Jin-Woo Bae , Yanghee Lee , Inseak Hwang
IPC: H01L27/108 , H01L21/66
Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.
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公开(公告)号:US10535533B2
公开(公告)日:2020-01-14
申请号:US15868544
申请日:2018-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yanghee Lee , Jonghyuk Park , Choongseob Shin , Hyojin Oh , Boun Yoon , Ilyoung Yoon
IPC: H01L23/48 , H01L27/108 , H01L21/768 , H01L25/065 , H01L49/02 , H01L21/48
Abstract: A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.
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