Semiconductor device and method of fabricating the same

    公开(公告)号:US10748906B2

    公开(公告)日:2020-08-18

    申请号:US16110658

    申请日:2018-08-23

    Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.

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