公开(公告)号：US10748906B2

公开(公告)日：2020-08-18

申请号：US16110658

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyuk Park ,  Byoungho Kwon ,  Inho Kim ,  Hyesung Park ,  Jin-Woo Bae ,  Yanghee Lee ,  Inseak Hwang

IPC: H01L27/108 ,  H01L21/66

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.

公开(公告)号：US10535533B2

公开(公告)日：2020-01-14

申请号：US15868544

申请日：2018-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanghee Lee ,  Jonghyuk Park ,  Choongseob Shin ,  Hyojin Oh ,  Boun Yoon ,  Ilyoung Yoon

IPC: H01L23/48 ,  H01L27/108 ,  H01L21/768 ,  H01L25/065 ,  H01L49/02 ,  H01L21/48

Abstract: A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.