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    Light-emitting device
    24.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10804487B2

    公开(公告)日：2020-10-13

    申请号：US15890399

    申请日：2018-02-07

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masataka Nakada ,  Takayuki Abe ,  Naoyuki Senda

    IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

    Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

    Semiconductor device, module, and electronic device
    26.
    发明授权
    Semiconductor device, module, and electronic device 有权

    公开(公告)号：US10096721B2

    公开(公告)日：2018-10-09

    申请号：US15609405

    申请日：2017-05-31

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masataka Nakada ,  Masahiro Katayama

    IPC: H01L29/786 ,  H01L27/12

    Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

    Semiconductor device, module, and electronic device
    28.
    发明授权
    Semiconductor device, module, and electronic device 有权

    公开(公告)号：US09705002B2

    公开(公告)日：2017-07-11

    申请号：US14610383

    申请日：2015-01-30

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masataka Nakada ,  Masahiro Katayama

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78648

    Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

    Light Emitting Device and Electronic Device
    29.
    发明申请
    Light Emitting Device and Electronic Device 审中-公开
    发光装置和电子装置

    公开(公告)号：US20150060890A1

    公开(公告)日：2015-03-05

    申请号：US14511742

    申请日：2014-10-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

    IPC: H01L33/44

    CPC classification number: H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

    Abstract translation: 目的是提供一种非常可靠的发光装置，该发光装置薄且不被外部局部压力损坏。 此外，另一个目的是通过在制造过程中防止由于外部应力引起的形状和特性的缺陷而以高产率制造发光器件。 发光元件被密封在其中纤维体浸渍有机树脂的第一结构体和其中纤维体浸渍有机树脂的第二结构体之间，由此可靠的发光器件是薄的和 可以提供强度。 此外，通过防止制造过程中的形状和特性的缺陷，可以以高产率制造发光器件。

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