公开(公告)号：US12230718B2

公开(公告)日：2025-02-18

申请号：US17533588

申请日：2021-11-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Mitsuo Mashiyama ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121

Abstract: A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.

公开(公告)号：US12136674B2

公开(公告)日：2024-11-05

申请号：US17433728

申请日：2020-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device includes a first conductive layer, a first insulating layer, a semiconductor layer, and a pair of second conductive layers. The first insulating layer is in contact with a top surface of the first conductive layer. The semiconductor layer is in contact with a top surface of the first insulating layer. The pair of second conductive layers are in contact with a top surface of the semiconductor layer. The pair of second conductive layers are apart from each other in a region overlapping with the first conductive layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US12117704B2

公开(公告)日：2024-10-15

申请号：US18527464

申请日：2023-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136227 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136277 ,  G02F1/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US12087825B2

公开(公告)日：2024-09-10

申请号：US18243850

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/622 ,  C23C14/08 ,  C23C14/58 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  C03C2217/23 ,  C03C2218/151 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US12057511B2

公开(公告)日：2024-08-06

申请号：US18127802

申请日：2023-03-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H10K50/80 ,  H10K59/12 ,  H10K59/38 ,  H10K59/121

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H10K50/80 ,  H10K59/12 ,  H10K59/38 ,  H01L29/78648 ,  H10K59/1201 ,  H10K59/1213

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US12034080B2

公开(公告)日：2024-07-09

申请号：US16520831

申请日：2019-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Masami Jintyou ,  Takahiro Iguchi ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

公开(公告)号：US11972945B2

公开(公告)日：2024-04-30

申请号：US17743947

申请日：2022-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Yukinori Shima

IPC: H01L21/02 ,  G02F1/1368 ,  H01L21/321 ,  H01L21/426 ,  H01L21/441 ,  H01L21/4763 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/385

CPC classification number: H01L21/02315 ,  G02F1/1368 ,  H01L21/02518 ,  H01L21/321 ,  H01L21/426 ,  H01L21/441 ,  H01L21/47635 ,  H01L21/823437 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/13685 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/385

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.

公开(公告)号：US11871600B2

公开(公告)日：2024-01-09

申请号：US17581064

申请日：2022-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Shingo Eguchi ,  Hiroki Adachi

IPC: H01L51/50 ,  H10K50/822 ,  H10K50/13 ,  H10K102/00

CPC classification number: H10K50/822 ,  H10K50/13 ,  H10K2102/341

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

公开(公告)号：US11837607B2

公开(公告)日：2023-12-05

申请号：US17944275

申请日：2022-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa ,  Kazunori Watanabe ,  Koji Kusunoki

IPC: G02F1/1368 ,  H01L27/12 ,  G06F3/041 ,  G06F3/044 ,  H01L29/786

CPC classification number: H01L27/1229 ,  G02F1/1368 ,  G06F3/0446 ,  G06F3/04166 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.

公开(公告)号：US11817508B2

公开(公告)日：2023-11-14

申请号：US17151941

申请日：2021-01-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Yasutaka Nakazawa ,  Yasuharu Hosaka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L27/12 ,  H01L27/02 ,  G06F3/044 ,  G06F3/041 ,  G02F1/1368 ,  G02F1/1333 ,  H10K59/121

CPC classification number: H01L29/78696 ,  G06F3/044 ,  G06F3/0412 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/0296 ,  H01L27/127 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78606 ,  H01L29/78648 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/13338 ,  G02F1/13685 ,  H10K59/1213

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.