公开(公告)号：US20160172539A1

公开(公告)日：2016-06-16

申请号：US15040969

申请日：2016-02-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L33/24 ,  H01L33/02 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。

公开(公告)号：US20150380236A1

公开(公告)日：2015-12-31

申请号：US14703773

申请日：2015-05-04

Applicant: Seoul Viosys Co., Ltd.

Inventor： Su Youn Hong ,  Joo Won Choi ,  Jeong Hun Heo ,  Su Jin Shin ,  Choong Min Lee

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02032 ,  H01L21/02002 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30617 ,  H01L33/0079

Abstract: Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.

Abstract translation: 本公开的实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。