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公开(公告)号:US20180138370A1
公开(公告)日:2018-05-17
申请号:US15870687
申请日:2018-01-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Chan Seob Shin , Myoung Hak Yang , Yeo Jin Yoon , Seom Geun Lee
Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.