公开(公告)号：US11296258B2

公开(公告)日：2022-04-05

申请号：US16705770

申请日：2019-12-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Chan Seob Shin ,  Myeong Hak Yang ,  Jin Woong Lee

IPC: H01L33/40 ,  H01L25/075 ,  H01L33/62

Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

公开(公告)号：US10411164B2

公开(公告)日：2019-09-10

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang ,  Jacob J. Richardson ,  Evan C. O'Hara

IPC: H01L33/42 ,  G02F1/1335 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  H01L33/38 ,  C30B29/16 ,  H01L33/00 ,  C30B7/00

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.

公开(公告)号：US20180138370A1

公开(公告)日：2018-05-17

申请号：US15870687

申请日：2018-01-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chan Seob Shin ,  Myoung Hak Yang ,  Yeo Jin Yoon ,  Seom Geun Lee

IPC: H01L33/42 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

公开(公告)号：US09450153B2

公开(公告)日：2016-09-20

申请号：US14949554

申请日：2015-11-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Hyoung Jin Lim ,  Chan Seob Shin ,  Kyu Ho Lee ,  Tae Gyun Kim ,  Sung Won Tae

IPC: H01L33/42 ,  H01L33/22

CPC classification number: H01L33/38 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。

公开(公告)号：US12009466B2

公开(公告)日：2024-06-11

申请号：US17983239

申请日：2022-11-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Gyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee ,  Jong Hyeon Chae

IPC: H01L33/62 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L33/52

Abstract: A light emitting device including first, second, and third light emitting parts one over another along a first direction, a first conductive pattern at least partially disposed between the second and third light emitting parts and including a first portion extending in a second direction perpendicular to the first direction and electrically coupled with the second light emitting part, and a second portion extending from one end of the first portion, a second conductive pattern disposed on and electrically coupled to the third light emitting part, and a first passivation covering the first light emitting part and including a first portion extending in the second direction and a second portion extending from one end of the first portion and forming an inclined angle with the second direction, in which the first conductive pattern at least partially overlaps with the second portion of the first passivation.

公开(公告)号：US20230074026A1

公开(公告)日：2023-03-09

申请号：US17987721

申请日：2022-11-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Seong Kyu Jang ,  Chan Seob Shin ,  Ho Joon Lee

IPC: H01L27/15 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L25/065 ,  H01L33/44

Abstract: A light emitting device including a plurality of semiconductor layers stacked in a vertical direction, a multiple quantum region disposed between the plurality of semiconductor layer, a first electrode electrically connected to at least one of the semiconductor layers, and an insulation layer disposed on the plurality of semiconductor layers, in which the at least one of the semiconductor layer includes a first surface from which a growth substrate is separated and a side surface forming an inclined angle with respect to the vertical direction, the insulation layer covers the inclined side surface, the first surface includes a textured surface through which light from the multiple quantum region is configured to pass, and the first electrode has a circular shape in a top view and a truncated cone shape in a cross-sectional view.

公开(公告)号：US20220367429A1

公开(公告)日：2022-11-17

申请号：US17878024

申请日：2022-07-31

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Chan Seob Shin ,  Ho Joon LEE ,  Seong Kyu JANG

IPC: H01L25/13 ,  H01L33/62 ,  H01L33/42 ,  H01L33/08

Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; first, second, and third transparent electrodes in ohmic contact with the first, second, and third LED stacks, respectively; a first electrode pad disposed on the first conductivity type semiconductor layer of the third LED stack; a lower second electrode pad disposed on the third transparent electrode; first, second, and third bump pads disposed on the first LED stack and electrically connected to the first, second, and third LED stacks, respectively; and a common bump pad commonly electrically connected to the first, second, and third LED stacks, in which a lower surface of the first electrode pad is located at a different elevation from a lower surface of the lower second electrode pad.

公开(公告)号：US20220158031A1

公开(公告)日：2022-05-19

申请号：US17536074

申请日：2021-11-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee

IPC: H01L33/24 ,  H01L33/62 ,  H01L25/075

Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

公开(公告)号：US11063185B2

公开(公告)日：2021-07-13

申请号：US16518169

申请日：2019-07-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Chan Seob Shin

IPC: H01L33/42 ,  H01L33/38 ,  H01L33/00 ,  H01L33/32

Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.

公开(公告)号：US20180323346A1

公开(公告)日：2018-11-08

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang

IPC: H01L33/42 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  G02F1/1335

CPC classification number: H01L33/42 ,  G02F1/133603 ,  H01L33/007 ,  H01L33/10 ,  H01L33/32 ,  H01L33/325 ,  H01L33/387 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.