公开(公告)号：US11761114B2

公开(公告)日：2023-09-19

申请号：US16693682

申请日：2019-11-25

Applicant: SHOWA DENKO K.K.

Inventor： Yohei Fujikawa

IPC: C30B23/06 ,  C30B35/00 ,  C30B29/36

CPC classification number: C30B23/066 ,  C30B29/36 ,  C30B35/002

Abstract: In a method of producing a SiC single crystal ingot of the present invention, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal conductivity raw material and a low thermal conductivity raw material layer containing a low thermal conductivity raw material in at least one of a position above or below the high thermal conductivity raw material layer are disposed to form a raw material part, and heating is performed so that the raw material part reaches the maximum temperature in the high thermal conductivity raw material layer and a SiC single crystal ingot is grown.

公开(公告)号：US11453958B2

公开(公告)日：2022-09-27

申请号：US16389347

申请日：2019-04-19

Applicant: SHOWA DENKO K.K.

Inventor： Yohei Fujikawa

IPC: C30B35/00 ,  C30B25/08 ,  C30B29/36 ,  C30B25/10 ,  C30B25/12 ,  C30B29/06

Abstract: The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing (3) and a substrate support (4) in a single crystal manufacturing apparatus (10), wherein the single crystal manufacturing apparatus (10) comprises a crystal growth container (2) and a heating member (5) arranged on an outer periphery of the crystal growth container (2), wherein the crystal growth container (2) includes the SiC source housing (3) disposed at a lower portion of the apparatus, and the substrate support (4) which is arranged above the SiC source housing (3) and supports a substrate (S) used for crystal growth so as to face the SiC source housing (3), and wherein the single crystal manufacturing apparatus (10) is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing (3).

公开(公告)号：US11427927B2

公开(公告)日：2022-08-30

申请号：US16711826

申请日：2019-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Yohei Fujikawa

IPC: C30B35/00 ,  C30B23/06 ,  C23C14/24 ,  C23C14/06 ,  C30B29/36

Abstract: A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.

公开(公告)号：US11008670B2

公开(公告)日：2021-05-18

申请号：US16466369

申请日：2017-12-22

Applicant: SHOWA DENKO K.K.

Inventor： Yohei Fujikawa ,  Hideyuki Uehigashi

IPC: C30B23/02 ,  C30B23/06 ,  C30B29/36 ,  C30B33/10

Abstract: A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.

公开(公告)号：US20210130981A1

公开(公告)日：2021-05-06

申请号：US17072466

申请日：2020-10-16

Applicant: SHOWA DENKO K.K.

Inventor： Yohei Fujikawa

IPC: C30B35/00 ,  C30B29/36 ,  C30B23/06 ,  C30B23/00

Abstract: A crystal growth apparatus according to the present embodiment includes a crucible, a heater which is installed on an outward side of the crucible and surrounds the crucible, and a coil which is installed on an outward side of the heater and surrounds the heater, in which an inner surface of the heater on the crucible side includes a first region, and a second region which is further away from an outer side surface of the crucible than the first region is.