公开(公告)号：US11710776B2

公开(公告)日：2023-07-25

申请号：US17401881

申请日：2021-08-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Edoardo Brezza ,  Pascal Chevalier

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/08 ,  H01L29/732

CPC classification number: H01L29/6625 ,  H01L21/76224 ,  H01L29/0804 ,  H01L29/7322

Abstract: A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.

公开(公告)号：US11417756B2

公开(公告)日：2022-08-16

申请号：US17175758

申请日：2021-02-15

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Edoardo Brezza ,  Alexis Gauthier ,  Fabien Deprat ,  Pascal Chevalier

IPC: H01L29/737 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

Abstract: A method of making a bipolar transistor includes forming a stack of a first, second, third and fourth insulating layers on a substrate. An opening is formed in the stack to reach the substrate. An epitaxial process forms the collector of the transistor on the substrate and selectively etches an annular opening in the third layer. The intrinsic part of the base is then formed by epitaxy on the collector, with the intrinsic part being separated from the third layer by the annular opening. The junction between the collector and the intrinsic part of the base is surrounded by the second layer. The emitter is formed on the intrinsic part and the third layer is removed. A selective deposition of a semiconductor layer on the second layer and in direct contact with the intrinsic part forms the extrinsic part of the base.

公开(公告)号：US11355581B2

公开(公告)日：2022-06-07

申请号：US16995079

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US10468508B2

公开(公告)日：2019-11-05

申请号：US16250182

申请日：2019-01-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/732 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10 ,  H01L21/3105 ,  H01L29/737

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.