公开(公告)号：US11137786B2

公开(公告)日：2021-10-05

申请号：US15931280

申请日：2020-05-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort ,  Maud Pierrel ,  Nicolas Borrel ,  Thierry Soude

IPC: G05F3/26

Abstract: An electronic device includes a starting circuit configured to compare a value representative of the power supply voltage with a threshold, wherein the circuit includes a generator of a current proportional to temperature.

公开(公告)号：US20200371541A1

公开(公告)日：2020-11-26

申请号：US15931280

申请日：2020-05-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort ,  Maud Pierrel ,  Nicolas Borrel ,  Thierry Soude

IPC: G05F3/26

Abstract: An electronic device includes a starting circuit configured to compare a value representative of the power supply voltage with a threshold, wherein the circuit includes a generator of a current proportional to temperature.

公开(公告)号：US10673431B2

公开(公告)日：2020-06-02

申请号：US16161533

申请日：2018-10-16

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort ,  Nicolas Borrel ,  Francesco La Rosa

IPC: H03K17/22 ,  G01R19/165 ,  G05F3/26 ,  G06F1/28 ,  H03K5/24 ,  G06F1/30 ,  G06F1/24

Abstract: A power supply voltage is monitored by a monitoring circuit including a variable current generator and a band gap voltage generator core receiving the variable current and including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the variable current generator generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

公开(公告)号：US10388724B2

公开(公告)日：2019-08-20

申请号：US16161785

申请日：2018-10-16

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Clement Champeix ,  Nicolas Borrel ,  Alexandre Sarafianos

IPC: G06F21/78 ,  H01L29/06 ,  G06F21/88 ,  G06F21/77 ,  H01L27/06 ,  H01L29/10 ,  H03K5/24 ,  G06F21/75 ,  G06F21/87 ,  H01L23/00 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8238

Abstract: An electronic chip includes a doped semiconductor substrate of a first conductivity type, a doped buried layer of a second conductivity type overlying the substrate, and a first doped well of the first conductivity type overlying the buried layer. Circuit components can be formed at a top surface of the first doped well and separated from the buried layer. A current detector is coupled to the buried layer and configured detect a bias current flowing into or out of the buried layer.

公开(公告)号：US20190237415A1

公开(公告)日：2019-08-01

申请号：US16382509

申请日：2019-04-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Clement Champeix ,  Nicolas Borrel

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L23/576 ,  H01L23/481 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06565

Abstract: A method of protecting a first chip in a multi-chip stack includes determining an electrical characteristic of a conductive loop. The conductive loop extends over a top portion of the first chip. The conductive loop also extends through the first chip and within a top portion of a second chip. The top portion of the second chip is adjacent to a bottom portion of the first chip. The method further includes determining whether the electrical characteristic indicates that an attack is being made to determine contents or operation of the first chip.

公开(公告)号：US20190086473A1

公开(公告)日：2019-03-21

申请号：US16059793

申请日：2018-08-09

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort

IPC: G01R31/317 ,  G06F1/28 ,  G01R19/165

Abstract: A DC voltage glitch detection circuit, wherein a detection threshold is a function of this DC voltage.

公开(公告)号：US20170323859A1

公开(公告)日：2017-11-09

申请号：US15661369

申请日：2017-07-27

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Mathieu Lisart ,  Nicolas Borrel

IPC: H01L23/00 ,  H01L21/66 ,  H01L23/64 ,  H03K17/687

CPC classification number: H01L23/576 ,  G01R31/2851 ,  G01R31/44 ,  G06F21/6245 ,  H01L22/34 ,  H01L23/647 ,  H03K17/687

Abstract: An integrated circuit including a plurality of first semiconductor strips of a first conductivity type and of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, including for each of the first strips: a plurality of bias contacts; for each bias contact, a switch capable of applying a potential on the bias contact; two detection contacts arranged at the ends of the first strip; and a detection circuit having its activation causing the turning off of the switches and the comparison with a threshold of the resistance between the detection contacts.

公开(公告)号：US09754902B2

公开(公告)日：2017-09-05

申请号：US15072209

申请日：2016-03-16

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Mathieu Lisart ,  Nicolas Borrel

IPC: H01L23/58 ,  H01L23/00 ,  H03K17/687 ,  H01L21/66 ,  H01L23/64

CPC classification number: H01L23/576 ,  G01R31/2851 ,  G01R31/44 ,  G06F21/6245 ,  H01L22/34 ,  H01L23/647 ,  H03K17/687

Abstract: An integrated circuit including a plurality of first semiconductor strips of a first conductivity type and of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, including for each of the first strips: a plurality of bias contacts; for each bias contact, a switch capable of applying a potential on the bias contact; two detection contacts arranged at the ends of the first strip; and a detection circuit having its activation causing the turning off of the switches and the comparison with a threshold of the resistance between the detection contacts.