公开(公告)号：US10128382B2

公开(公告)日：2018-11-13

申请号：US15866890

申请日：2018-01-10

Applicant: Samsung Display Co., Ltd.

Inventor： Seungho Yoon ,  Bong-Kyun Kim ,  Youngjun Kim ,  Hongsick Park ,  Byeong-Beom Kim ,  Sangwon Shin

IPC: G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/465 ,  H01L21/467 ,  H01L29/45 ,  H01L23/532

Abstract: A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

公开(公告)号：US09899531B2

公开(公告)日：2018-02-20

申请号：US14710739

申请日：2015-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Seungho Yoon ,  Bong-Kyun Kim ,  Youngjun Kim ,  Hongsick Park ,  Byeong-Beom Kim ,  Sangwon Shin

IPC: G02F1/136 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/465 ,  H01L21/467 ,  H01L29/45 ,  G02F1/1368 ,  H01L23/532

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L21/465 ,  H01L21/467 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

公开(公告)号：US09219192B2

公开(公告)日：2015-12-22

申请号：US13773685

申请日：2013-02-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeun Tae Kim ,  Hyang-Shik Kong ,  Namseok Roh ,  Hongsick Park ,  Changoh Jeong ,  Jinho Ju ,  Byeong-Jin Lee ,  Kyungtae Chae ,  Jiseong Yang

IPC: G02F1/1339 ,  G02F1/1333 ,  G02F1/1345 ,  H01L33/08 ,  G02F1/1335 ,  G02F1/1341 ,  G02F1/167 ,  G02F1/1362 ,  G02F1/137

CPC classification number: H01L27/1288 ,  G02F1/133377 ,  G02F1/133509 ,  G02F1/133512 ,  G02F1/133516 ,  G02F1/1341 ,  G02F1/136209 ,  G02F1/167 ,  G02F2001/133357 ,  G02F2001/136222 ,  G02F2001/13793 ,  H01L33/08

Abstract: A display apparatus includes a base substrate, a pixel on the base substrate, and a color filter part between the base substrate and the pixel. The pixel includes a cover layer defining a TSC (Tunnel Shaped Cavity) on the base substrate, an image display part provided in the TSC, and first and second electrodes which apply an electric field to the image display part.

Abstract translation: 显示装置包括基底基板，基底基板上的像素以及基底基板与像素之间的滤色器部分。 像素包括在基底基板上限定TSC（隧道形腔）的盖层，设置在TSC中的图像显示部分以及向图像显示部分施加电场的第一和第二电极。

公开(公告)号：US09136137B2

公开(公告)日：2015-09-15

申请号：US14263956

申请日：2014-04-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： In-Bae Kim ,  Jong-Hyun Choung ,  Youngmin Moon ,  Hongsick Park ,  Gyu-po Kim ,  Won-guk Seo ,  Hyun-cheol Shin ,  Ki-beom Lee ,  Sam-young Cho ,  Seung-yeon Han

IPC: H01L21/44 ,  H01L21/306 ,  C23F1/18

CPC classification number: H01L21/30604 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/45

Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Abstract translation: 包含0.5重量％至20重量％的过硫酸盐，0.01重量％至1重量％的氟化合物，1重量％至10重量％的无机酸，0.01重量％至2重量％的唑类， 0.1重量％至5重量％的氯化合物，0.05重量％至3重量％的铜盐，0.01重量％至5重量％的抗氧化剂或其盐，基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量％。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。