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公开(公告)号:US20240049544A1
公开(公告)日:2024-02-08
申请号:US18297052
申请日:2023-04-07
Applicant: Samsung Display Co., LTD.
Inventor: Joon Seok PARK , JONGDO KEUM , Hyoung Do KIM , Yun Yong NAM , Chul Won PARK , Kilim HAN
IPC: H10K59/131 , H10K59/12 , H10K59/124
CPC classification number: H10K59/1315 , H10K59/1201 , H10K59/124
Abstract: A display device includes: a substrate; a conductive pattern layer disposed on the substrate; a buffer layer disposed on the conductive pattern layer; an active pattern layer disposed on the buffer layer and including a channel region and a conductive region adjacent to the channel region; an insulating pattern layer disposed on the channel region; an oxide pattern layer disposed on the insulating pattern layer; a gate electrode disposed on the oxide pattern layer; and a connecting member electrically connected to the conductive pattern layer and the conductive region. The connecting member and the oxide pattern layer include a same material.
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公开(公告)号:US20210328102A1
公开(公告)日:2021-10-21
申请号:US17171451
申请日:2021-02-09
Applicant: Samsung Display Co., LTD.
Inventor: Joon Seok PARK , Myoung Hwa KIM , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Hye Lim CHOI
Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.
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公开(公告)号:US20210036029A1
公开(公告)日:2021-02-04
申请号:US16876984
申请日:2020-05-18
Applicant: Samsung Display Co., LTD.
Inventor: Joon Seok PARK , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Yeon Keon MOON , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC: H01L27/12 , H01L27/32 , G02F1/1362
Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.
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公开(公告)号:US20210036028A1
公开(公告)日:2021-02-04
申请号:US16836651
申请日:2020-03-31
Applicant: Samsung Display Co., Ltd.
Inventor: Myoung Hwa KIM , Joon Seok PARK , So Young KOO , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Kyung Jin JEON
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66
Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.
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公开(公告)号:US20210020717A1
公开(公告)日:2021-01-21
申请号:US16843764
申请日:2020-04-08
Applicant: Samsung Display Co., Ltd.
Inventor: Hyung Jun KIM , Myoung Hwa KIM , Tae Sang KIM , Yeon Keon MOON , Joon Seok PARK , Sang Woo SOHN , Sang Won SHIN , Jun Hyung LIM , Hye Lim CHOI
IPC: H01L27/32 , H01L29/786 , H01L29/24 , H01L29/66 , H01L21/02 , H01L21/4763 , H01L21/465 , H01L21/4757
Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).
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公开(公告)号:US20200099015A1
公开(公告)日:2020-03-26
申请号:US16562729
申请日:2019-09-06
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Seok PARK , Kyoung Seok SON , Jun Hyung LIM , Masataka KANO
Abstract: A display apparatus including a base substrate, a first thin film transistor disposed on the base substrate, a via insulation layer disposed on the first thin film transistor, and a light emitting structure disposed on the via insulation layer. The first thin film transistor includes a first gate electrode, an oxide semiconductor overlapped with the first gate electrode, and including tin (Sn), an etch stopper disposed on the oxide semiconductor and including an oxide semiconductor material which does not include tin (Sn), a first source electrode making contact with the oxide semiconductor, and a first drain electrode making contact with the oxide semiconductor, and spaced apart from the first source electrode.
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公开(公告)号:US20200075641A1
公开(公告)日:2020-03-05
申请号:US16529516
申请日:2019-08-01
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Seok PARK , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Kyung Jin JEON
Abstract: A display device includes: a substrate including a display area and a non-display area; a gate driver disposed on the substrate in the non-display area and including a plurality of stages that generate a gate signal and output the gate signal to the display area; a switching transistor and a driving transistor disposed on the substrate in the display area; and a light emitting diode connected to the driving transistor, wherein each of the plurality of stages may include a plurality of transistors, wherein a channel layer of the driving transistor includes a first oxide semiconductor material, and a channel layer of the plurality of transistors included in each of the plurality of stages includes a second oxide semiconductor material, wherein the first oxide semiconductor material is different from the second oxide semiconductor material, and wherein the second oxide semiconductor material may include tin.
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公开(公告)号:US20200052056A1
公开(公告)日:2020-02-13
申请号:US16539761
申请日:2019-08-13
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Seok PARK , Yeon Keon MOON , Kwang Suk KIM , Tae Sang KIM , Geunchul PARK , Kyung Jin JEON
Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.
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公开(公告)号:US20250089475A1
公开(公告)日:2025-03-13
申请号:US18635753
申请日:2024-04-15
Applicant: Samsung Display Co., LTD.
Inventor: Geun Chul PARK , So Young KOO , Jong Do KEUM , Eok Su KIM , Hyung Jun KIM , Joon Seok PARK , Ae Ran SONG
IPC: H10K59/124 , H01L27/12 , H10K59/12
Abstract: A display device includes a substrate, a first transistor including a first active layer disposed on the substrate and a first gate electrode disposed on the first active layer, and a first gate insulating layer disposed between the first active layer and the first gate electrode. The first active layer includes an oxide semiconductor containing indium (In) at a content range of about 40 at % to about 54 at %, and the first gate insulating layer has an emission amount range of oxygen (O2) of about 2.48E+19 Molec./cm3 to about 2.76E+19 Molec./cm3, or an emission amount range of nitrogen monoxide (NO) of about 1.04E+20 Molec./cm3 to about 1.15E+20 Molec./cm3 under heat treatment conditions performed at a temperature range of about 50° C. to about 550° C.
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公开(公告)号:US20240063356A1
公开(公告)日:2024-02-22
申请号:US18342567
申请日:2023-06-27
Applicant: Samsung Display Co., LTD.
Inventor: Yun Yong NAM , So Young KOO , Eok Su KIM , Hyoung Do KIM , Hyung Jun KIM , Joon Seok PARK
CPC classification number: H01L33/62 , H01L25/167
Abstract: A display device includes: a first electrode and a second electrode spaced from the first electrode; a first insulating layer on the first electrode and the second electrode; a plurality of light emitting elements on the first insulating layer and on the first electrode and the second electrode; a first connection electrode on the first electrode and contacting the plurality of light emitting elements; and a second connection electrode on the second electrode and contacting the plurality of light emitting elements, wherein each of the first electrode and the second electrode includes a first metal layer and a second metal layer on the first metal layer and including a different material from the first metal layer, a thickness of the first metal layer is between 100 Å to 300 Å, and a thickness of each of the first electrode and the second electrode is 2600 Å or less.
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