DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190074304A1

    公开(公告)日:2019-03-07

    申请号:US16106161

    申请日:2018-08-21

    Abstract: A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region;and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.

    Display device and method of manufacturing the same

    公开(公告)号:US11638383B2

    公开(公告)日:2023-04-25

    申请号:US16892963

    申请日:2020-06-04

    Abstract: A method of manufacturing a display device includes preparing a substrate, wherein the substrate includes a pixel area and a transmission area, forming insulating layers in the pixel area and in the transmission area, forming a pixel electrode on the insulating layers in the pixel area and forming a pixel-defining layer on the pixel electrode, wherein the pixel-defining layer exposes at least part of the pixel electrode, forming a metal layer on the pixel-defining layer in the pixel area, the at least part of the pixel electrode exposed by the pixel-defining layer in the pixel area, and the insulating layers in the transmission area, removing the metal layer on the insulating layers in the transmission area, and removing the insulating layers in the transmission area.

    Display apparatus
    25.
    发明授权

    公开(公告)号:US11594560B2

    公开(公告)日:2023-02-28

    申请号:US16940561

    申请日:2020-07-28

    Abstract: A display apparatus includes a substrate including a display area and a non-display area disposed around the display area, a driving circuit disposed in the non-display area, a first conductive line extending in a first direction and disposed in the non-display area, a second conductive line extending in the first direction and disposed on the first conductive line, and a third conductive line extending in the first direction and disposed on the second conductive line, wherein the second conductive line overlaps the first conductive line by a first width or is spaced apart from the first conductive line by a first distance in a plan view, and the third conductive line overlaps the first conductive line by a second width or is spaced apart from the first conductive line by a second distance in the plan view.

    DISPLAY DEVICE
    26.
    发明申请

    公开(公告)号:US20220028955A1

    公开(公告)日:2022-01-27

    申请号:US17298616

    申请日:2019-05-08

    Abstract: An embodiment of the present disclosure comprises a display device including a substrate including a display area and a peripheral area around the display area, a thin-film transistor on the substrate in the display area and a display element electrically connected to the thin-film transistor, and a first voltage line and a second voltage line located on the substrate in the peripheral area and supplying power for driving the display element, wherein the first voltage line is a common voltage line and entirely surrounds the display area, the second voltage line is a driving voltage line and is arranged to correspond to one side of the display area, and the first voltage line and the second voltage line are on different layers.

    Display apparatus including thin film transistor and method of manufacturing the same

    公开(公告)号:US10854644B2

    公开(公告)日:2020-12-01

    申请号:US16106161

    申请日:2018-08-21

    Abstract: A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region; and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.

    DISPLAY DEVICE INCLUDING A CMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190296095A1

    公开(公告)日:2019-09-26

    申请号:US16437857

    申请日:2019-06-11

    Abstract: A display device includes at least one transistor. The transistor has an active pattern including a first active area and a second active area. The first active area includes a first channel area and an n-doped area contacting the first channel area. The second active area includes a second channel area and a p-doped area contacting the second channel area. A first insulation layer covers at least a portion of the active pattern. A first gate electrode is disposed on the first insulation layer and at least partially overlaps the first channel area. A second gate electrode is disposed on the first insulation layer and at least partially overlaps the second channel area. A taper angle of the second gate electrode is larger than a taper angle of the first gate electrode.

    Display device and method of manufacturing the same

    公开(公告)号:US10403649B2

    公开(公告)日:2019-09-03

    申请号:US15869748

    申请日:2018-01-12

    Abstract: A display device includes a common active pattern, a first gate electrode, and a second gate electrode. The common active pattern includes an NMOS area, a PMOS area, and a silicide area in a same layer as the NMOS area and the PMOS area. The silicide area electrically connects the NMOS area to the PMOS area. The NMOS area includes a first channel area and an n-doped area contacting the first channel area. The PMOS area includes a second channel area and a p-doped area contacting the second channel area. The first gate electrode overlaps the first channel area, and the second gate electrode overlaps the second channel area.

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