Abstract:
A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.
Abstract:
A display device includes: a first inorganic insulating layer; a wiring disposed on the first inorganic insulating layer; a second inorganic insulating layer covering the wiring; and a display element disposed on the second inorganic insulating layer, wherein the wiring includes a lower layer including at least one of aluminum and an aluminum alloy, an upper layer disposed on the lower layer and including at least one of titanium and titanium oxide, and an intermediate layer disposed between the lower layer and the upper layer and including titanium aluminide.
Abstract:
A pixel includes a light-emitting element, a driving transistor that controls an amount of a driving current flowing to the light-emitting element according to a gate-source voltage, first and second compensation transistors that operate in response to a first scan signal and are electrically connected in series with each other between a gate and a drain of the driving transistor, first and second gate initialization transistors that operate in response to a second scan signal and are electrically connected in series with each other between a voltage line and the gate of the driving transistor, and a node connection transistor that connects a first floating node and a second floating node to each other in response to the second scan signal. The first floating node is between the first and second compensation transistors, and the second floating node is between the first and second gate initialization transistors.
Abstract:
In a method of manufacturing a display apparatus, the method includes: providing a first mother substrate; forming, on the first mother substrate, a pixel layer comprising a light-emitting device; providing a second mother substrate; forming, on the second mother substrate, a diffraction pattern layer configured to diffract light emitted from the light-emitting device; forming a bonded substrate structure by bonding the first mother substrate, on which the pixel layer is formed, and the second mother substrate, on which the diffraction pattern layer is formed; forming, by cutting the bonded substrate structure, a plurality of unit substrate structures each comprising a first substrate on which the pixel layer is formed and a second substrate on which the diffraction pattern layer is formed; forming a protection member on the diffraction pattern layer; and removing a foreign material on the diffraction pattern layer with the protection member.
Abstract:
An organic light emitting display device includes a folding part configured to be folded, and a flat part adjacent to the folding part. The folding part includes a first pixel. The flat part includes a second pixel. The first pixel includes a first organic light emitting diode, a first driving transistor and a first control transistor. The first driving transistor includes a first semiconductor pattern. The first control transistor includes a second semiconductor pattern. The second pixel includes a second organic light emitting diode, a second driving transistor and second control transistor. The second driving transistor includes a third semiconductor pattern. The second control transistor includes a fourth semiconductor pattern. At least one of the first or second semiconductor patterns includes an oxide semiconductor or a polycrystalline silicon, and each of the third and fourth semiconductor patterns includes the other of the oxide semiconductor and the polycrystalline silicon.
Abstract:
A donor mask and a method of manufacturing an organic light-emitting display apparatus by using the donor mask. The method includes transferring a portion corresponding to a through hole of a transferring layer deposited on a light-to-heat conversion layer of the donor mask onto at least a portion of pixel electrodes on a substrate.
Abstract:
A display apparatus includes a first sub-pixel electrode, a metal bank layer in which a first opening overlapping the first sub-pixel electrode is defined, the metal bank layer including a first metal layer and a second metal layer on the first metal layer, an insulating layer between an outer portion of the first sub-pixel electrode and the metal bank layer, a first intermediate layer overlapping the first sub-pixel electrode through the first opening of the metal bank layer, a first opposite electrode disposed on the first intermediate layer through the first opening of the metal bank layer, and a low-reflective layer disposed on the second metal layer of the metal bank layer and having a reflectivity less than a reflectivity of the second metal layer.
Abstract:
A method of manufacturing a display panel includes providing an insulating substrate that includes a hole area, a display area that surrounds the hole area, and a peripheral area adjacent to the display area, forming a semiconductor pattern in the display area, forming an insulating layer, forming contact holes in the insulating layer that expose portions of the semiconductor pattern, and forming a module hole by etching a portion of the insulating layer and a portion of the insulating substrate that overlap the hole area.
Abstract:
A pixel includes an organic light-emitting diode, a driving transistor, a first dual gate transistor, a first capacitor, and a compensation transistor. The organic light-emitting diode includes first and second terminals. The driving transistor generates the driving current and includes a first terminal to which a first power supply voltage is applied, a second terminal connected to the first terminal of the organic light-emitting diode, and a gate terminal. The first dual gate transistor is connected between the gate terminal of the driving transistor and the second terminal of the driving transistor and includes first and second sub-transistors. The first capacitor includes a first electrode to which the first power supply voltage is applied, and a second electrode connected to a first node that connects the first and second sub-transistors to each other. The compensation transistor includes a terminal connected between the second electrode and the first node.
Abstract:
A display apparatus includes a thin-film transistor on a substrate, a planarization film on the thin-film transistor, a light-emitting element on the planarization film, connected to the thin-film transistor, and including a first electrode, an intermediate layer and a second electrode in order from the thin-film transistor, an insulating layer overlapping an edge of the first electrode, a metal stacked structure on the insulating layer, including a first sub-metal layer and a second sub-metal layer which is closer to the insulating layer than the first sub-metal layer, and a low reflection layer located on the metal stacked structure. The second electrode includes a first portion on the intermediate layer, and a second portion which is on the reflection layer and disconnected from the first portion at the metal stacked structure.