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公开(公告)号：US09829749B2
公开(公告)日：2017-11-28
申请号：US14745067
申请日：2015-06-19
Applicant: Samsung Display Co., Ltd.
Inventor： Janghyun Kim , Minsu Kim , Taewoon Cha
IPC: G02F1/1339 , G02F1/1335 , G02F1/1333
CPC classification number: G02F1/1339 , G02F1/133351 , G02F1/133512
Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a display panel having a first substrate and a second substrate bonded to the first substrate and in which a display area displaying an image and a non-display area extending towards the outside of the display area are formed; a sealant arranged between the first substrate and the second substrate and surrounding the display area; wirings arranged on the first substrate; and a black matrix arranged on the second substrate, wherein a heat energy passing portion through which a heat energy applied from the outside towards the sealant passes is formed in the display panel.
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Patent Agency Ranking
公开(公告)号：US20230128109A1
公开(公告)日：2023-04-27
申请号：US17715553
申请日：2022-04-07
Applicant: Samsung Display Co., Ltd.
Inventor： Dongmin Lee , Jaewoo Jeong , Janghyun Kim , Jongoh Seo , Byungsoo So
Abstract: A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.
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公开(公告)号：US12193271B2
公开(公告)日：2025-01-07
申请号：US17715553
申请日：2022-04-07
Applicant: Samsung Display Co., Ltd.
Inventor： Dongmin Lee , Jaewoo Jeong , Janghyun Kim , Jongoh Seo , Byungsoo So
IPC: H10K59/121 , H10K71/00 , H01L27/12 , H01L29/66 , H01L29/786 , H10K59/12
Abstract: A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.
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公开(公告)号：US11088356B2
公开(公告)日：2021-08-10
申请号：US16707818
申请日：2019-12-09
Applicant: Samsung Display Co., Ltd.
Inventor： Woongsik Kim , Taewook Kang , Jeongmin Park , Hyeyong Chu , Hoon Kang , Hyunju Kang , Janghyun Kim
Abstract: In a method of manufacturing a display apparatus, the method includes: providing a first mother substrate; forming, on the first mother substrate, a pixel layer comprising a light-emitting device; providing a second mother substrate; forming, on the second mother substrate, a diffraction pattern layer configured to diffract light emitted from the light-emitting device; forming a bonded substrate structure by bonding the first mother substrate, on which the pixel layer is formed, and the second mother substrate, on which the diffraction pattern layer is formed; forming, by cutting the bonded substrate structure, a plurality of unit substrate structures each comprising a first substrate on which the pixel layer is formed and a second substrate on which the diffraction pattern layer is formed; forming a protection member on the diffraction pattern layer; and removing a foreign material on the diffraction pattern layer with the protection member.
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公开(公告)号：US20230395728A1
公开(公告)日：2023-12-07
申请号：US17845301
申请日：2022-06-21
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jongoh Seo , Janghyun Kim , Jongjun Baek , Dongmin Lee
IPC: H01L29/786 , H01L29/66 , H10K59/121 , H10K59/80
CPC classification number: H01L29/78696 , H01L29/6675 , H10K59/1213 , H10K59/1216 , H10K59/873
Abstract: Provided are a thin-film transistor substrate, a manufacturing method thereof, and a display apparatus. The thin-film transistor substrate includes: a substrate; a buffer layer on the substrate; a semiconductor layer arranged on the buffer layer and including a first conductive area, a second conductive area, and a channel area between the first conductive area and the second conductive area; a first dopant doped in an upper portion of the channel area at a first concentration; a second dopant doped in a lower portion of the channel area at a second concentration and being of a different type from a type of the first dopant; a gate insulating layer covering the semiconductor layer; and a gate electrode overlapping the channel area in a plan view and disposed on the gate insulating layer.
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公开(公告)号：US20160154261A1
公开(公告)日：2016-06-02
申请号：US14745067
申请日：2015-06-19
Applicant: Samsung Display Co., Ltd.
Inventor： Janghyun Kim , Minsu Kim , Taewoon Cha
IPC: G02F1/1339 , G02F1/1343 , G02F1/1335
CPC classification number: G02F1/1339 , G02F1/133351 , G02F1/133512
Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a display panel having a first substrate and a second substrate bonded to the first substrate and in which a display area displaying an image and a non-display area extending towards the outside of the display area are formed; a sealant arranged between the first substrate and the second substrate and surrounding the display area; wirings arranged on the first substrate; and a black matrix arranged on the second substrate, wherein a heat energy passing portion through which a heat energy applied from the outside towards the sealant passes is formed in the display panel.
Abstract translation: 提供了显示装置和制造显示装置的方法。 该显示装置包括具有第一基板和第二基板的显示面板，该第一基板和第二基板接合到第一基板，并且形成显示图像的显示区域和朝向显示区域的外部延伸的非显示区域。 密封剂，其布置在所述第一基板和所述第二基板之间并且围绕所述显示区域; 布置在第一基板上的布线; 以及布置在所述第二基板上的黑矩阵，其中在所述显示面板中形成有从外部向所述密封剂施加的热能通过的热能通过部。
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